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Results: 1-6 |
Results: 6

Authors: JUNG TS CHOI DC CHO SH KIM MJ LEE SK CHOI BS YUM JS KIM SH LEE DG SON JC YONG MS OH HK JUN SB LEE WM HAQ E SUH KD ALI SB LIM HK
Citation: Ts. Jung et al., A 3.3-V SINGLE POWER-SUPPLY 16-MB NONVOLATILE VIRTUAL DRAM USING A NAND FLASH MEMORY TECHNOLOGY, IEEE journal of solid-state circuits, 32(11), 1997, pp. 1748-1757

Authors: YOO JH KIM CH LEE KC KYUNG KH YOO SM LEE JH SON MH HAN JM KANG BM HAQ E LEE SB SIM JH KIM JH MOON BS KIM KY PARK JG LEE KP LEE KY KIM KN CHO SI PARK JW LIM HK
Citation: Jh. Yoo et al., A 32-BANK 1 GB SELF-STROBING SYNCHRONOUS DRAM WITH 1 GBYTE S BANDWIDTH/, IEEE journal of solid-state circuits, 31(11), 1996, pp. 1635-1644

Authors: CHOI Y KIM M JANG H KIM T LEE S LEE H PARK C LEE S KIM C CHO S HAQ E KARP J CHIN D
Citation: Y. Choi et al., 16-MB SYNCHRONOUS DRAM WITH 125-MBYTE S DATA RATE/, IEICE transactions on electronics, E77C(5), 1994, pp. 859-863

Authors: CHOI YH KIM MH JANG HS KIM TJ LEE SH LEE HC PARK CR LEE SY KIM CS CHO SI HAQ E KARP J CHIN DJ
Citation: Yh. Choi et al., 16-MB SYNCHRONOUS DRAM WITH 125-MBYTE S DATA RATE/, IEEE journal of solid-state circuits, 29(4), 1994, pp. 529-533

Authors: YOO SM HAQ E LEE SH CHOI YH CHO SI KANG NS CHIN D
Citation: Sm. Yoo et al., VARIABLE VCC DESIGN TECHNIQUES FOR BATTERY-OPERATED DRAMS, IEICE transactions on electronics, E76C(5), 1993, pp. 839-843

Authors: YOO SM HAQ E LEE SH CHOI YH CHO SI KANG NS CHIN D
Citation: Sm. Yoo et al., VARIABLE VCC DESIGN TECHNIQUES FOR BATTERY-OPERATED DRAMS, IEEE journal of solid-state circuits, 28(4), 1993, pp. 499-503
Risultati: 1-6 |