Authors: STEFANOV KD SUEVA D GERMANOVA K HARDALOV CM

Citation: Kd. Stefanov et al., INVESTIGATION OF RADIATION DEFECTS IN N(-P-P(+) PLANAR SILICON NEUTRON DETECTORS()), Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 412(2-3), 1998, pp. 387-391

Authors: STEFANOV KD HARDALOV CM SUEVA D

Citation: Kd. Stefanov et al., INVESTIGATION OF RADIATION-DAMAGE IN SILICON PRODUCED BY FAST-NEUTRONIRRADIATION WITH LIFETIME MEASUREMENTS AND DEEP-LEVEL TRANSIENT SPECTROSCOPY, Physica status solidi. a, Applied research, 163(1), 1997, pp. 27-32

Authors: HARDALOV CM STEFANOV KD SUEVA D

Citation: Cm. Hardalov et al., ON THE APPLICABILITY OF DEEP-LEVEL TRANSIENT SPECTROSCOPY FOR THE INVESTIGATION OF DEEP CENTERS IN SILICON CREATED BY FAST-NEUTRON IRRADIATION, Applied physics A: Materials science & processing, 61(2), 1995, pp. 107-109

Authors: BATOVSKI DA HARDALOV CM

Citation: Da. Batovski et Cm. Hardalov, INVERSE PROBLEM FOR THE NONEXPONENTIAL DEEP-LEVEL TRANSIENT SPECTROSCOPY ANALYSIS IN SEMICONDUCTOR-MATERIALS WITH STRONG DISORDER - THEORETICAL AND COMPUTATIONAL ASPECTS - COMMENT, Journal of applied physics, 75(2), 1994, pp. 1243-1244

Authors: BATOVSKI DA HARDALOV CM

Citation: Da. Batovski et Cm. Hardalov, INVERSE PROBLEM FOR THE NONEXPONENTIAL DEEP-LEVEL TRANSIENT SPECTROSCOPY ANALYSIS IN SEMICONDUCTOR-MATERIALS WITH STRONG DISORDER - THEORETICAL AND COMPUTATIONAL ASPECTS, Journal of applied physics, 74(1), 1993, pp. 291-295