AAAAAA
Results:
1-11
|
Results: 11
Authors:
SCHELHASE S
BOTTCHER J
GIBIS R
HARDE P
PARASKEVOPOULOS A
KUNZEL H
Citation: S. Schelhase et al., SELECTIVE INFILL METALORGANIC MOLECULAR-BEAM EPITAXY OF INP-SI N(+) N(-) LAYERS FOR BURIED COLLECTOR DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 210-215
Authors:
KUHMANN JF
CHIANG CH
HARDE P
REIER F
OESTERLE W
URBAN I
KLEIN A
Citation: Jf. Kuhmann et al., PT THIN-FILM METALLIZATION FOR FC-BONDING USING SNPB60 40 SOLDER BUMPMETALLURGY/, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 242(1-2), 1998, pp. 22-25
Authors:
KUNZEL H
GIBIS R
KIZUKI H
ALBRECHT P
EBERT S
HARDE P
MALCHOW S
KAISER R
Citation: H. Kunzel et al., MOMBE GROWN GAINASP (LAMBDA(G)=1.05 1.15 MU-M) WAVE-GUIDE FOR LASER INTEGRATED PHOTONIC ICS/, Journal of crystal growth, 188(1-4), 1998, pp. 281-287
Authors:
KUNZEL H
ALBRECHT P
EBERT S
GIBIS R
HARDE P
KAISER R
KIZUKI H
MALCHOW S
Citation: H. Kunzel et al., METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF SEMIINSULATING GAINASP(LAMBDA(G)=1.05 MU-M)FE OPTICAL WAVE-GUIDES FOR INTEGRATED PHOTONIC DEVICES, Applied physics letters, 72(23), 1998, pp. 3050-3052
MBE GROWTH OF HIGH-QUALITY INP FOR GAINAS INP HETEROSTRUCTURES USING INCONGRUENT EVAPORATION OF GAP/
Authors:
KUNZEL H
BOTTCHER J
HARDE P
MAESSEN R
Citation: H. Kunzel et al., MBE GROWTH OF HIGH-QUALITY INP FOR GAINAS INP HETEROSTRUCTURES USING INCONGRUENT EVAPORATION OF GAP/, Journal of crystal growth, 175, 1997, pp. 940-944
Authors:
ROEHLE H
SCHROETERJANSSEN H
HARDE P
FRANKE D
Citation: H. Roehle et al., ON THE ROLE OF INTERFACE PROPERTIES IN THE DEGRADATION OF METALORGANIC VAPOR-PHASE EPITAXIALLY GROWN FE PROFILES IN INP, Journal of electronic materials, 24(11), 1995, pp. 1535-1537
Authors:
KUNZEL H
BOCHNIA R
BOTTCHER J
HARDE P
HASE A
GRIEBENOW U
Citation: H. Kunzel et al., IN-SITU AL0.24GA0.24IN0.52AS SURFACE CLEANING PROCEDURE USING HYDROGEN RADICALS FOR MOLECULAR-BEAM EPITAXY REGROWTH, Journal of crystal growth, 150(1-4), 1995, pp. 18-22
Authors:
REIER FW
JAHN E
AGRAWAL N
HARDE P
GROTE N
Citation: Fw. Reier et al., DOPING CHARACTERISTICS OF UNDOPED AND ZN-DOPED IN(GA)ALAS LAYERS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 135(3-4), 1994, pp. 463-468
Authors:
WOLF T
ZINKE T
KROST A
SCHEFFLER H
ULLRICH H
BIMBERG D
HARDE P
Citation: T. Wolf et al., FE AND TI DOPING OF INP GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION FOR THE FABRICATION OF THERMALLY STABLE HIGH-RESISTIVITY LAYERS, Journal of applied physics, 75(8), 1994, pp. 3870-3881
Authors:
AGRAWAL N
REIER FW
BORNHOLDT C
WEINERT CM
LI KC
HARDE P
LANGENHORST R
GROSSKOPF G
BERGER L
WEGENER M
Citation: N. Agrawal et al., ELECTROABSORPTION AND SATURATION BEHAVIOR OF INGAASP INP/INALAS MULTIPLE SUPERLATTICE ELECTRON-TRANSFER OPTICAL MODULATOR STRUCTURES/, Applied physics letters, 63(8), 1993, pp. 1110-1112
Authors:
SCHNABEL RF
KROST A
GRUNDMANN M
HEINRICHSDORFF F
BIMBERG D
PILATZEK M
HARDE P
Citation: Rf. Schnabel et al., EPITAXY OF HIGH-RESISTIVITY INP ON SI, Applied physics letters, 63(26), 1993, pp. 3607-3609
Risultati:
1-11
|