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Results: 1-7 |
Results: 7
EMITTER UTILIZATION IN HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: QUACH T JENKINS T BARRETTE J BOZADA C CERNY C DESALVO G DETTMER R EBEL J GILLESPIE J HAVASY C ITO C NAKANO K PETTIFORD C SEWELL J VIA D ANHOLT R
Citation: T. Quach et al., EMITTER UTILIZATION IN HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 41(9), 1997, pp. 1303-1308
BASE AND COLLECTOR RESISTANCES IN HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: ANHOLT R BOZADA C DESALVO G DETTMER R EBEL J GILLESPIE J JENKINS T HAVASY C ITO C NAKANO K PETTIFORD C QUACH T SEWELL J VIA D
Citation: R. Anholt et al., BASE AND COLLECTOR RESISTANCES IN HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 41(11), 1997, pp. 1739-1743
THERMAL MANAGEMENT OF MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: BOZADA C CERNY C DESALVO G DETTMER R EBEL J GILLESPIE J HAVASY C JENKINS T ITO C NAKANO K PETTIFORD C QUACH T SEWELL J VIA GD ANHOLT R
Citation: C. Bozada et al., THERMAL MANAGEMENT OF MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 41(10), 1997, pp. 1667-1673
COMPARISON OF THERMAL-SHUNT AND FLIP-CHIP HBT THERMAL IMPEDANCES - COMMENT ON NOVEL HBT WITH REDUCED THERMAL IMPEDANCE
Authors: JENKINS T BOZADA C DETTMER R SEWELL J VIA D BARRETTE J EBEL J DESALVO G HAVASY C LIOU L QUACH T GILLESPIE J PETTIFORD C ITO C NAKANO K ANHOLT R
Citation: T. Jenkins et al., COMPARISON OF THERMAL-SHUNT AND FLIP-CHIP HBT THERMAL IMPEDANCES - COMMENT ON NOVEL HBT WITH REDUCED THERMAL IMPEDANCE, IEEE microwave and guided wave letters, 6(7), 1996, pp. 268-269
HIGH-TEMPERATURE MICROWAVE CHARACTERISTICS OF GAAS-MESFET DEVICES WITH ALAS BUFFER LAYERS
Authors: ITO C JENKINS T TROMBLEY G LEE R RESTON R HAVASY C JOHNSON B EPPERS C
Citation: C. Ito et al., HIGH-TEMPERATURE MICROWAVE CHARACTERISTICS OF GAAS-MESFET DEVICES WITH ALAS BUFFER LAYERS, IEEE electron device letters, 17(1), 1996, pp. 16-18
MEASURING, MODELING, AND MINIMIZING CAPACITANCES IN HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: ANHOLT R BOZADA C DETTMER R VIA D JENKINS T BARRETTE J EBEL J HAVASY C SEWELL J QUACH T
Citation: R. Anholt et al., MEASURING, MODELING, AND MINIMIZING CAPACITANCES IN HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 39(7), 1996, pp. 961-963
HIGH-TEMPERATURE CHARACTERISTICS OF GAAS-MESFET DEVICES FABRICATED WITH ALAS BUFFER LAYER
Authors: LEE R TROMBLEY G JOHNSON B RESTON R MAH M HAVASY C ITO C
Citation: R. Lee et al., HIGH-TEMPERATURE CHARACTERISTICS OF GAAS-MESFET DEVICES FABRICATED WITH ALAS BUFFER LAYER, IEEE electron device letters, 16(6), 1995, pp. 265-267
Risultati: 1-7 |