AAAAAA

   
Results: 1-7 |
Results: 7
LAPLACE-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF THE G4GOLD-HYDROGEN COMPLEX IN SILICON
Authors: DEIXLER P TERRY J HAWKINS ID EVANSFREEMAN JH PEAKER AR RUBALDO L MAUDE DK PORTAL JC DOBACZEWSKI L NIELSEN KB LARSEN AN MESLI A
Citation: P. Deixler et al., LAPLACE-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF THE G4GOLD-HYDROGEN COMPLEX IN SILICON, Applied physics letters, 73(21), 1998, pp. 3126-3128
LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW INSIGHT INTO DEFECT MICROSCOPY
Authors: DOBACZEWSKI L HAWKINS ID PEAKER AR
Citation: L. Dobaczewski et al., LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW INSIGHT INTO DEFECT MICROSCOPY, Materials science and technology, 11(10), 1995, pp. 1071-1073
OPTICAL CHARACTERIZATION OF DEEP STATES ASSOCIATED WITH OXIDATION-INDUCED STACKING-FAULTS IN SILICON
Authors: CASTALDINI A CAVALLINI A EVANS JH HAWKINS ID PEAKER AR VANDINI M
Citation: A. Castaldini et al., OPTICAL CHARACTERIZATION OF DEEP STATES ASSOCIATED WITH OXIDATION-INDUCED STACKING-FAULTS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 170-174
CHARACTERIZATION OF SI SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY/
Authors: BRIGHTEN JC HAWKINS ID PEAKER AR KUBIAK RA PARKER EHC WHALL TE
Citation: Jc. Brighten et al., CHARACTERIZATION OF SI SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY/, Journal of applied physics, 76(7), 1994, pp. 4237-4243
LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPIC STUDIES OF DEFECTS IN SEMICONDUCTORS
Authors: DOBACZEWSKI L KACZOR P HAWKINS ID PEAKER AR
Citation: L. Dobaczewski et al., LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPIC STUDIES OF DEFECTS IN SEMICONDUCTORS, Journal of applied physics, 76(1), 1994, pp. 194-198
THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI SI1-YGEY/SI HETEROJUNCTIONS/
Authors: BRIGHTEN JC HAWKINS ID PEAKER AR KUBIAK RA PARKER EHC WHALL TE
Citation: Jc. Brighten et al., THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI SI1-YGEY/SI HETEROJUNCTIONS/, Semiconductor science and technology, 8(7), 1993, pp. 1487-1489
THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES IN SI SI1-XGEX/SI HETEROJUNCTIONS BY CAPACITANCE-VOLTAGE TECHNIQUES/
Authors: BRIGHTEN JC HAWKINS ID PEAKER AR PARKER EHC WHALL TE
Citation: Jc. Brighten et al., THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES IN SI SI1-XGEX/SI HETEROJUNCTIONS BY CAPACITANCE-VOLTAGE TECHNIQUES/, Journal of applied physics, 74(3), 1993, pp. 1894-1899
Risultati: 1-7 |