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Results:
1-9
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Results: 9
Authors:
WENDLER E
HEFT A
WESCH W
Citation: E. Wendler et al., ION-BEAM-INDUCED DAMAGE AND ANNEALING BEHAVIOR IN SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 105-117
Authors:
WESCH W
HEFT A
HOBERT H
PEITER G
WENDLER E
BACHMANN T
Citation: W. Wesch et al., HIGH-DOSE MEV OXYGEN-ION IMPLANTATION INTO SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 160-163
Authors:
WENDLER E
HEFT A
WESCH W
PEITER G
DUNKEN HH
Citation: E. Wendler et al., ANNEALING STUDIES OF B-SIC BY RBS AND OPTICAL SUBGAP SPECTROSCOPY( IMPLANTED 6H), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 341-346
Authors:
MARIOTTI A
MANNING CJ
HASSELL T
HEFT A
Citation: A. Mariotti et al., CYCLOSPORINE-A ACCUMULATION IN HUMAN GINGIVAL FIBROBLASTS, Journal of dental research, 76, 1997, pp. 2046-2046
Authors:
WENDLER E
HEFT A
ZAMMIT U
GLASER E
MARINELLI M
WESCH W
Citation: E. Wendler et al., SUBGAP OPTICAL-PROPERTIES OF ION-IMPLANTED SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 398-403
Authors:
HEFT A
WENDLER E
HEINDL J
BACHMANN T
GLASER E
STRUNK HP
WESCH W
Citation: A. Heft et al., DAMAGE PRODUCTION AND ANNEALING OF ION-IMPLANTED SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 239-243
Authors:
HEFT A
WENDLER E
BACHMAN T
GLASER E
WESCH W
Citation: A. Heft et al., DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED SILICON-CARBIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 142-146
Authors:
WESCH W
HEFT A
WENDLER E
BACHMANN T
GLASER E
Citation: W. Wesch et al., HIGH-TEMPERATURE ION-IMPLANTATION OF SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 335-338
Authors:
WESCH W
HEFT A
HEINDL J
STRUNK HP
BACHMANN T
GLASER E
WENDLER E
Citation: W. Wesch et al., INVESTIGATION OF RADIATION-DAMAGE IN ION-IMPLANTED AND ANNEALED SIC LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 339-345
Risultati:
1-9
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