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Results: 1-10 |
Results: 10
LATTICE SITE LOCATION OF THULIUM AND ERBIUM IMPLANTED GAAS
Authors: ALVES E DASILVA MF SOARES JC HENRY MO GWILLIAM R SEALY BJ FREITAG K VIANDEN R STIEVENARD D
Citation: E. Alves et al., LATTICE SITE LOCATION OF THULIUM AND ERBIUM IMPLANTED GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 421-425
STRESS STUDY OF 1.5-MU-M EMISSION IN SI-ER AND GAAS-ER
Authors: LEITAO JP CARMO MC HENRY MO
Citation: Jp. Leitao et al., STRESS STUDY OF 1.5-MU-M EMISSION IN SI-ER AND GAAS-ER, Journal of luminescence, 72-4, 1997, pp. 110-111
THE COMPLEXING OF OXYGEN WITH THE GROUP-II IMPURITIES BE, CD AND ZN IN SILICON
Authors: DALY SE MCGLYNN E HENRY MO CAMPION JD MCGUIGAN KG DOCARMO MC NAZARE MH
Citation: Se. Daly et al., THE COMPLEXING OF OXYGEN WITH THE GROUP-II IMPURITIES BE, CD AND ZN IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 116-119
A COMPLEX LUMINESCENT DEFECT IN BE-DOPED OXYGEN-RICH SILICON
Authors: DALY SE HENRY MO MCGUIGAN KG DOCARMO MC
Citation: Se. Daly et al., A COMPLEX LUMINESCENT DEFECT IN BE-DOPED OXYGEN-RICH SILICON, Semiconductor science and technology, 11(7), 1996, pp. 996-1001
PHOTOLUMINESCENCE STUDY OF CADMIUM-RELATED DEFECTS IN OXYGEN-RICH SILICON
Authors: MCGLYNN E HENRY MO MCGUIGAN KG DOCARMO MC
Citation: E. Mcglynn et al., PHOTOLUMINESCENCE STUDY OF CADMIUM-RELATED DEFECTS IN OXYGEN-RICH SILICON, Physical review. B, Condensed matter, 54(20), 1996, pp. 14494-14503
OXYGEN COMPLEXING WITH GROUP-II IMPURITIES IN SILICON
Authors: DALY SE CAMPION JD MCGLYNN E HENRY MO DOCARMO MC NAZARE MH
Citation: Se. Daly et al., OXYGEN COMPLEXING WITH GROUP-II IMPURITIES IN SILICON, Solid state communications, 93(5), 1995, pp. 454-454
PIEZO-SPECTROSCOPIC DATA-ANALYSIS - A PC TOOL
Authors: MCCARREN AL RUSKIN HJ MCGUIGAN KG HENRY MO
Citation: Al. Mccarren et al., PIEZO-SPECTROSCOPIC DATA-ANALYSIS - A PC TOOL, IEE proceedings. Science, measurement and technology, 141(3), 1994, pp. 185-189
RADIOACTIVE ISOTOPES FOR PHOTOLUMINESCENCE SPECTROSCOPY - IN-111 IN SILICON
Authors: DALY SE HENRY MO FREITAG K VIANDEN R
Citation: Se. Daly et al., RADIOACTIVE ISOTOPES FOR PHOTOLUMINESCENCE SPECTROSCOPY - IN-111 IN SILICON, Journal of physics. Condensed matter, 6(43), 1994, pp. 643-650
A PHOTOLUMINESCENCE STUDY OF ZN-O COMPLEXES IN SILICON
Authors: HENRY MO CAMPION JD MCGUIGAN KG LIGHTOWLERS EC DOCARMO MC NAZARE MH
Citation: Mo. Henry et al., A PHOTOLUMINESCENCE STUDY OF ZN-O COMPLEXES IN SILICON, Semiconductor science and technology, 9(7), 1994, pp. 1375-1381
IMAGING SEMICONDUCTOR WAFERS USING PHOTOLUMINESCENCE
Authors: WHITE SF HENRY MO MCGLYNN E LAMBKIN JD CONSIDINE L
Citation: Sf. White et al., IMAGING SEMICONDUCTOR WAFERS USING PHOTOLUMINESCENCE, Optical engineering, 33(12), 1994, pp. 3974-3977
Risultati: 1-10 |