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Results: 1-25/30
Authors:
JEONG JY
BABAYAN SE
TU VJ
PARK J
HENINS I
HICKS RF
SELWYN GS
Citation: Jy. Jeong et al., ETCHING MATERIALS WITH AN ATMOSPHERIC-PRESSURE PLASMA-JET, Plasma sources science & technology, 7(3), 1998, pp. 282-285
Authors:
BABAYAN SE
JEONG JY
TU VJ
PARK J
SELWYN GS
HICKS RF
Citation: Se. Babayan et al., DEPOSITION OF SILICON DIOXIDE FILMS WITH AN ATMOSPHERIC-PRESSURE PLASMA-JET, Plasma sources science & technology, 7(3), 1998, pp. 286-288
Authors:
LI L
QI H
GAN S
HAN BK
HICKS RF
Citation: L. Li et al., SITE-SPECIFIC CHEMISTRY OF CARBON-TETRACHLORIDE DECOMPOSITION ON GAAS(001), Applied physics A: Materials science & processing, 66, 1998, pp. 501-505
Authors:
HAN BK
LI L
KAPPERS MJ
HICKS RF
YOON H
GOORSKY MS
HIGA KT
Citation: Bk. Han et al., CHARACTERIZATION OF INGAAS GAAS(001) FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING ALTERNATIVE SOURCES/, Journal of electronic materials, 27(2), 1998, pp. 81-84
Authors:
LI L
HAN BK
HICKS RF
YOON H
GOORSKY MS
Citation: L. Li et al., ATOMIC-STRUCTURE OF INXGA1-XAS GAAS(001) (2X4) AND (3X2) SURFACES/, Ultramicroscopy, 73(1-4), 1998, pp. 229-235
Authors:
LI L
HAN B
GAN S
QI H
HICKS RF
Citation: L. Li et al., OBSERVATION OF THE ATOMIC SURFACE-STRUCTURE OF GAAS(001) FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Surface science, 398(3), 1998, pp. 386-394
Authors:
GAN S
LI L
NGUYEN T
QI H
HICKS RF
YANG M
Citation: S. Gan et al., SCANNING-TUNNELING-MICROSCOPY OF CHEMICALLY CLEANED GERMANIUM(100) SURFACES, Surface science, 395(1), 1998, pp. 69-74
Authors:
BEGARNEY MJ
WARDDRIP ML
KAPPERS MJ
HICKS RF
Citation: Mj. Begarney et al., KINETICS OF CARBON-TETRACHLORIDE DECOMPOSITION DURING THE METALORGANIC VAPOR-PHASE EPITAXY OF GALLIUM-ARSENIDE AND INDIUM ARSENIDE, Journal of crystal growth, 193(3), 1998, pp. 305-315
Authors:
KAPPERS MJ
WARDDRIP ML
HICKS RF
Citation: Mj. Kappers et al., LIGAND-EXCHANGE REACTIONS IN INGAAS METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 191(3), 1998, pp. 332-340
Authors:
GAN S
LI L
HICKS RF
Citation: S. Gan et al., CHARACTERIZATION OF DISLOCATIONS IN GERMANIUM SUBSTRATES INDUCED BY MECHANICAL-STRESS, Applied physics letters, 73(8), 1998, pp. 1068-1070
Authors:
LI L
GAN S
HAN BK
QI H
HICKS RF
Citation: L. Li et al., THE REACTION OF CARBON-TETRACHLORIDE WITH GALLIUM-ARSENIDE(001), Applied physics letters, 72(8), 1998, pp. 951-953
Authors:
HAN BK
LI L
FU Q
HICKS RF
Citation: Bk. Han et al., STRUCTURE AND COMPOSITION OF THE C(4X4) RECONSTRUCTION FORMED DURING GALLIUM-ARSENIDE METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 72(25), 1998, pp. 3347-3349
Authors:
KAPPERS MJ
WILKERSON KJ
HICKS RF
Citation: Mj. Kappers et al., EFFECTS OF LIGAND-EXCHANGE REACTIONS ON THE COMPOSITION OF CD1-YZNYTEGROWN BY METALORGANIC VAPOR-PHASE EPITAXY, JOURNAL OF PHYSICAL CHEMISTRY B, 101(25), 1997, pp. 4882-4888
Authors:
WILKERSON KJ
KAPPERS MJ
HICKS RF
Citation: Kj. Wilkerson et al., REACTION CHEMISTRY OF ZNTE METALORGANIC VAPOR-PHASE EPITAXY, The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 101(13), 1997, pp. 2451-2458
Authors:
KAPPERS MJ
WARDDRIP ML
WILKERSON KJ
HICKS RF
Citation: Mj. Kappers et al., LIGAND-EXCHANGE REACTIONS IN ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 26(10), 1997, pp. 1169-1173
Authors:
WARDDRIP ML
KAPPERS MJ
LI L
QI H
HAN BK
GAN S
HICKS RF
Citation: Ml. Warddrip et al., MECHANISM OF DOPING GALLIUM-ARSENIDE WITH CARBON-TETRACHLORIDE DURINGORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 26(10), 1997, pp. 1189-1193
Authors:
LI L
HAN BK
GAN SP
QI HH
HICKS RF
Citation: L. Li et al., SCANNING TUNNELING MICROSCOPIC OBSERVATION OF THE ATOMIC-STRUCTURE OFGAAS(001) SURFACE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy, 44(2), 1997, pp. 149-152
Authors:
AU WK
KAPPERS MJ
HICKS RF
Citation: Wk. Au et al., EVALUATION OF A ZERO-DISCHARGE REACTOR FOR THE CHEMICAL-VAPOR-DEPOSITION OF MERCURY TELLURIDE, Journal of crystal growth, 173(3-4), 1997, pp. 386-392
Authors:
QI HH
GEE PE
HICKS RF
Citation: Hh. Qi et al., SITES FOR ARSINE ADSORPTION ON GAAS(001), Surface science, 347(3), 1996, pp. 289-302
Authors:
KAPPERS MJ
MCDANIEL AH
HICKS RF
Citation: Mj. Kappers et al., CONTROLLING THE GROUP-II COMPOSITION IN CDZNTE ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY - A KINETIC-MODEL, Journal of crystal growth, 160(3-4), 1996, pp. 310-319
Authors:
ADAMSON SD
HAN BK
HICKS RF
Citation: Sd. Adamson et al., SITE-SPECIFIC REACTION-KINETICS FOR GALLIUM-ARSENIDE METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 69(21), 1996, pp. 3236-3238
Authors:
GEE PE
QI HH
HICKS RF
Citation: Pe. Gee et al., SITES FOR TRIMETHYLGALLIUM ADSORPTION ON GAAS(001), Surface science, 330(2), 1995, pp. 135-146
Authors:
QI HH
GEE PE
NGUYEN T
HICKS RF
Citation: Hh. Qi et al., SITES FOR HYDROGEN ADSORPTION ON GAAS(001), Surface science, 323(1-2), 1995, pp. 6-18
Authors:
MCDANIEL AH
WILKERSON KJ
HICKS RF
Citation: Ah. Mcdaniel et al., CHEMISTRY OF CADMIUM TELLURIDE ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of physical chemistry, 99(11), 1995, pp. 3574-3582
Authors:
KORGEL B
HICKS RF
Citation: B. Korgel et Rf. Hicks, A DIFFUSION-MODEL FOR SELECTIVE-AREA EPITAXY BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 151(1-2), 1995, pp. 204-212