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Results:
1-7
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Results: 7
Authors:
PIETSCH GJ
CHABAL YJ
HIGASHI GS
Citation: Gj. Pietsch et al., THE ATOMIC-SCALE REMOVAL MECHANISM DURING CHEMOMECHANICAL POLISHING OF SI(100) AND SI(111), Surface science, 333, 1995, pp. 395-401
Authors:
PIETSCH GJ
CHABAL YJ
HIGASHI GS
Citation: Gj. Pietsch et al., INFRARED-ABSORPTION SPECTROSCOPY OF SI(100) AND SI(111) SURFACES AFTER CHEMOMECHANICAL POLISHING, Journal of applied physics, 78(3), 1995, pp. 1650-1658
Authors:
DAWSON JL
KRISCH K
EVANSLUTTERODT KW
TANG MT
MANCHANDA L
GREEN ML
BRASEN D
HIGASHI GS
BOONE T
Citation: Jl. Dawson et al., KINETIC SMOOTHENING - GROWTH THICKNESS DEPENDENCE OF THE INTERFACE WIDTH OF THE SI(001) SIO2 INTERFACE/, Journal of applied physics, 77(9), 1995, pp. 4746-4749
Authors:
BLAYO N
TEPERMEISTER I
BENTON JL
HIGASHI GS
BOONE T
ONUOHA A
KLEMENS FP
IBBOTSON DE
SAWIN HH
Citation: N. Blayo et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .4. PLASMA-INDUCED DAMAGE IN A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1340-1350
Authors:
TANG MT
EVANSLUTTERODT KW
GREEN ML
BRASEN D
KRISCH K
MANCHANDA L
HIGASHI GS
BOONE T
Citation: Mt. Tang et al., GROWTH TEMPERATURE-DEPENDENCE OF THE SI(001) SIO2 INTERFACE WIDTH/, Applied physics letters, 64(6), 1994, pp. 748-750
Authors:
PIETSCH GJ
HIGASHI GS
CHABAL YJ
Citation: Gj. Pietsch et al., CHEMOMECHANICAL POLISHING OF SILICON - SURFACE TERMINATION AND MECHANISM OF REMOVAL, Applied physics letters, 64(23), 1994, pp. 3115-3117
Authors:
TANG MT
EVANSLUTTERODT KW
HIGASHI GS
BOONE T
Citation: Mt. Tang et al., ROUGHNESS OF THE SILICON (001) SIO2 INTERFACE, Applied physics letters, 62(24), 1993, pp. 3144-3146
Risultati:
1-7
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