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Results: 1-8 |
Results: 8
DESIGN OF A 2-NS CYCLE TIME 72-KB ECL-CMOS SRAM MACRO
Authors: OHHATA K KUSUNOKI T NAMBU H KANETANI K HIGETA K YAMAGUCHI K HOMMA N
Citation: K. Ohhata et al., DESIGN OF A 2-NS CYCLE TIME 72-KB ECL-CMOS SRAM MACRO, IEICE transactions on electronics, E81C(3), 1998, pp. 447-454
A 1.8-NS ACCESS, 550-MHZ, 4.5-MB CMOS SRAM
Authors: NAMBU H KANETANI K YAMASAKI K HIGETA K USAMI M FUJIMURA Y ANDO K KUSUNOKI T YAMAGUCHI K HOMMA N
Citation: H. Nambu et al., A 1.8-NS ACCESS, 550-MHZ, 4.5-MB CMOS SRAM, IEEE journal of solid-state circuits, 33(11), 1998, pp. 1650-1658
INTERFACIAL STRUCTURE CONTROL OF CUBIC BORON-NITRIDE FILMS PREPARED BY ION-BEAM-ASSISTED DEPOSITION
Authors: SETSUHARA Y SUZUKI T TANAKA Y MIYAKE S SUZUKI M KUMAGAI M OGATA K KOHATA M HIGETA K EINISHI T SUZUKI Y SHIMOITANI Y MOTONAMI Y
Citation: Y. Setsuhara et al., INTERFACIAL STRUCTURE CONTROL OF CUBIC BORON-NITRIDE FILMS PREPARED BY ION-BEAM-ASSISTED DEPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 851-856
PROPERTIES OF DEPTH-PROFILE CONTROLLED BORON-NITRIDE FILMS PREPARED BY ION-BEAM-ASSISTED DEPOSITION
Authors: KUMAGAI M SUZUKI M SUZUKI T TANAKA Y SETSUHARA Y MIYAKE S OGATA K KOHATA M HIGETA K EINISHI T SUZUKI Y SHIMOITANI Y MOTONAMI Y
Citation: M. Kumagai et al., PROPERTIES OF DEPTH-PROFILE CONTROLLED BORON-NITRIDE FILMS PREPARED BY ION-BEAM-ASSISTED DEPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 977-980
A SOFT-ERROR-IMMUNE 0.9-NS 1.15-MB ECL-CMOS SRAM WITH 30-PS 120 K LOGIC GATES AND ON-CHIP TEST CIRCUITRY
Authors: HIGETA K USAMI M OHAYASHI M FUJIMURA Y NISHIYAMA M ISOMURA S YAMAGUCHI K IDEI Y NAMBU H OHHATA K HANTA N
Citation: K. Higeta et al., A SOFT-ERROR-IMMUNE 0.9-NS 1.15-MB ECL-CMOS SRAM WITH 30-PS 120 K LOGIC GATES AND ON-CHIP TEST CIRCUITRY, IEEE journal of solid-state circuits, 31(10), 1996, pp. 1443-1450
A 0.65-NS, 72-KB ECL-CMOS RAM MACRO FOR A 1-MB SRAM
Authors: NAMBU H KANETANI K IDEI Y MASUDA T HIGETA K OHAYASHI M USAMI M YAMAGUCHI K KIKUCHI T IKEDA T OHHATA K KUSUNOKI T HOMMA N
Citation: H. Nambu et al., A 0.65-NS, 72-KB ECL-CMOS RAM MACRO FOR A 1-MB SRAM, IEICE transactions on electronics, E78C(6), 1995, pp. 739-747
A 0.65-NS, 72-KB ECL-CMOS RAM MACRO FOR A 1-MB SRAM
Authors: NAMBU H KANETANI K IDEI Y MASUDA T HIGETA K OHAYASHI M USAMI M YAMAGUCHI K KIKUCHI T IKEDA T OHHATA K KUSUNOKI T HOMMA N
Citation: H. Nambu et al., A 0.65-NS, 72-KB ECL-CMOS RAM MACRO FOR A 1-MB SRAM, IEEE journal of solid-state circuits, 30(4), 1995, pp. 491-499
METALLURGICAL STUDY ON HARDNESS DISTRIBUTION BY HIGH-ENERGY ION-IMPLANTATION TAKING NOTICE OF SOLID-SOLUBILITY
Authors: HIGETA K YOSHIDA Y SATO M MOTONAMI Y KUMAGAI M SAITO H SATOU M
Citation: K. Higeta et al., METALLURGICAL STUDY ON HARDNESS DISTRIBUTION BY HIGH-ENERGY ION-IMPLANTATION TAKING NOTICE OF SOLID-SOLUBILITY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 237-241
Risultati: 1-8 |