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Results: 1-8 |
Results: 8
SHALLOW JUNCTIONS DIFFUSED FROM SINGLE-IMPLANTED AND COIMPLANTED WSI2FILMS AND INTEGRATED 0.2 MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTORTRANSISTORS
Authors: LIU CT LUFTMAN H CHANG CP LIU R HILLENIUS SJ
Citation: Ct. Liu et al., SHALLOW JUNCTIONS DIFFUSED FROM SINGLE-IMPLANTED AND COIMPLANTED WSI2FILMS AND INTEGRATED 0.2 MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTORTRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 334-338
DESIGN AND BENCHMARKING OF BCPMOS VERSUS SCPMOS FOR AN EVOLUTIONARY 0.25-MU-M CMOS TECHNOLOGY
Authors: VUONG HH ESHRAGHI SA RAFFERTY CS HILLENIUS SJ PINTO MR DIODATO PW CONG HI ZEITZOFF PM
Citation: Hh. Vuong et al., DESIGN AND BENCHMARKING OF BCPMOS VERSUS SCPMOS FOR AN EVOLUTIONARY 0.25-MU-M CMOS TECHNOLOGY, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 991-993
PREVENTING BORON PENETRATION THROUGH 25-ANGSTROM GATE OXIDES WITH NITROGEN IMPLANT IN THE SI SUBSTRATES
Authors: LIU CT MA Y LUFTMAN H HILLENIUS SJ
Citation: Ct. Liu et al., PREVENTING BORON PENETRATION THROUGH 25-ANGSTROM GATE OXIDES WITH NITROGEN IMPLANT IN THE SI SUBSTRATES, IEEE electron device letters, 18(5), 1997, pp. 212-214
LIGHT NITROGEN IMPLANT FOR PREPARING THIN-GATE OXIDES
Authors: LIU CT MA Y BECERRO J NAKAHARA S EAGLESHAM DJ HILLENIUS SJ
Citation: Ct. Liu et al., LIGHT NITROGEN IMPLANT FOR PREPARING THIN-GATE OXIDES, IEEE electron device letters, 18(3), 1997, pp. 105-107
UNTITLED
Authors: JINDAL RP HILLENIUS SJ
Citation: Rp. Jindal et Sj. Hillenius, UNTITLED, I.E.E.E. transactions on electron devices, 44(3), 1997, pp. 353-353
EFFECTS OF OXIDE INTERFACE TRAPS AND TRANSIENT ENHANCED DIFFUSION ON THE PROCESS MODELING OF PMOS DEVICES
Authors: VUONG HH RAFFERTY CS ESHRAGHI SA LENTZ JL ZEITZOFF PM PINTO MR HILLENIUS SJ
Citation: Hh. Vuong et al., EFFECTS OF OXIDE INTERFACE TRAPS AND TRANSIENT ENHANCED DIFFUSION ON THE PROCESS MODELING OF PMOS DEVICES, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1144-1152
HIGH-ENERGY ION-IMPLANTATION FOR PROFILED TUB FORMATION AND IMPURITY GETTERING IN DEEP-SUBMICRON CMOS TECHNOLOGY
Authors: JACOBSON DC KAMGAR A EAGLESHAM DJ LLOYD EJ HILLENIUS SJ POATE JM
Citation: Dc. Jacobson et al., HIGH-ENERGY ION-IMPLANTATION FOR PROFILED TUB FORMATION AND IMPURITY GETTERING IN DEEP-SUBMICRON CMOS TECHNOLOGY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 416-419
GATE OXIDE THINNING AT THE ACTIVE DEVICE FOX BOUNDARY IN SUBMICROMETER PBL ISOLATION/
Authors: KAMGAR A HILLENIUS SJ BAKER RM NAKAHARA S BECHTOLD PF
Citation: A. Kamgar et al., GATE OXIDE THINNING AT THE ACTIVE DEVICE FOX BOUNDARY IN SUBMICROMETER PBL ISOLATION/, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2089-2095
Risultati: 1-8 |