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Results: 1-25 | 26-44 |
Results: 26-44/44
MOCVD OF HIGH-QUALITY YBA2CU3O7-DELTA THIN-FILMS USING A FLUORINATED BARIUM PRECURSOR
Authors: RICHARDS BC COOK SL PINCH DL ANDREWS GW LENGELING G SCHULTE B JURGENSEN H SHEN YQ VASE P FRELTOFT T SPEE CIMA LINDEN JL HITCHMAN ML SHAMLIAN SH BROWN A
Citation: Bc. Richards et al., MOCVD OF HIGH-QUALITY YBA2CU3O7-DELTA THIN-FILMS USING A FLUORINATED BARIUM PRECURSOR, Physica. C, Superconductivity, 252(3-4), 1995, pp. 229-236
DISPOSAL METHODS FOR CHLORINATED AROMATIC WASTE
Authors: HITCHMAN ML SPACKMAN RA ROSS NC AGRA C
Citation: Ml. Hitchman et al., DISPOSAL METHODS FOR CHLORINATED AROMATIC WASTE, Chemical Society reviews, 24(6), 1995, pp. 423
AN OVERVIEW OF THE DEPOSITION CHEMISTRY AND THE PROPERTIES OF IN-SITUDOPED POLYSILICON PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
Authors: AHMED W AHMED E HITCHMAN ML
Citation: W. Ahmed et al., AN OVERVIEW OF THE DEPOSITION CHEMISTRY AND THE PROPERTIES OF IN-SITUDOPED POLYSILICON PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of Materials Science, 30(16), 1995, pp. 4115-4124
A SIMPLE DISPOSABLE POTENTIOMETRIC BIOSENSOR FOR PESTICIDES
Authors: TROJANOWICZ M HITCHMAN ML
Citation: M. Trojanowicz et Ml. Hitchman, A SIMPLE DISPOSABLE POTENTIOMETRIC BIOSENSOR FOR PESTICIDES, Chemia Analityczna, 40(4), 1995, pp. 609-617
THE ELECTROCHEMISTRY OF L-CYSTINE AND L-CYSTEINE .1. THERMODYNAMIC AND KINETIC-STUDIES
Authors: RALPH TR HITCHMAN ML MILLINGTON JP WALSH FC
Citation: Tr. Ralph et al., THE ELECTROCHEMISTRY OF L-CYSTINE AND L-CYSTEINE .1. THERMODYNAMIC AND KINETIC-STUDIES, Journal of electroanalytical chemistry [1992], 375(1-2), 1994, pp. 1-15
THE ELECTROCHEMISTRY OF L-CYSTINE AND L-CYSTEINE .2. ELECTROSYNTHESISOF L-CYSTEINE AT SOLID ELECTRODES
Authors: RALPH TR HITCHMAN ML MILLINGTON JP WALSH FC
Citation: Tr. Ralph et al., THE ELECTROCHEMISTRY OF L-CYSTINE AND L-CYSTEINE .2. ELECTROSYNTHESISOF L-CYSTEINE AT SOLID ELECTRODES, Journal of electroanalytical chemistry [1992], 375(1-2), 1994, pp. 17-27
FIXED HYDROGEN IN SILICON-NITRIDE FILMS PREPARED BY PLASMOCHEMICAL DEPOSITION
Authors: ALEKSANDROV SE HITCHMAN ML KOVALGIN AY
Citation: Se. Aleksandrov et al., FIXED HYDROGEN IN SILICON-NITRIDE FILMS PREPARED BY PLASMOCHEMICAL DEPOSITION, Russian journal of applied chemistry, 67(1), 1994, pp. 128-133
STUDIES OF THE EFFECTS OF NF3 ON THE GROWTH OF POLYSILICON FILMS BY LOW-PRESSURE CVD .1. EFFECT ON GROWTH-RATE
Authors: HITCHMAN ML ZHAO JF SHAMLIAN SH
Citation: Ml. Hitchman et al., STUDIES OF THE EFFECTS OF NF3 ON THE GROWTH OF POLYSILICON FILMS BY LOW-PRESSURE CVD .1. EFFECT ON GROWTH-RATE, Journal of materials chemistry, 4(12), 1994, pp. 1821-1826
STUDIES OF THE EFFECTS OF NF3 ON THE GROWTH OF POLYSILICON FILMS BY LOW-PRESSURE CVD .2. EFFECT ON CRYSTALLINITY
Authors: HITCHMAN ML ZHAO JF SHAMLIAN SH
Citation: Ml. Hitchman et al., STUDIES OF THE EFFECTS OF NF3 ON THE GROWTH OF POLYSILICON FILMS BY LOW-PRESSURE CVD .2. EFFECT ON CRYSTALLINITY, Journal of materials chemistry, 4(12), 1994, pp. 1827-1834
STUDIES OF THE EFFECTS OF NF3 ON THE GROWTH OF POLYSILICON FILMS BY LOW-PRESSURE CVD .3. EFFECT ON COMPOSITION
Authors: HITCHMAN ML ZHAO JF SHAMLIAN SH AFFROSSMAN S HARTSHORNE M MAYDELL EA KHEYRANDISH H
Citation: Ml. Hitchman et al., STUDIES OF THE EFFECTS OF NF3 ON THE GROWTH OF POLYSILICON FILMS BY LOW-PRESSURE CVD .3. EFFECT ON COMPOSITION, Journal of materials chemistry, 4(12), 1994, pp. 1835-1842
BONDED HYDROGEN IN SILICON-NITRIDE FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: ALEXANDROV SE HITCHMAN ML SHAMLIAN SH
Citation: Se. Alexandrov et al., BONDED HYDROGEN IN SILICON-NITRIDE FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of materials chemistry, 4(12), 1994, pp. 1843-1847
METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF YBCO USING A NEW, STABLE AND VOLATILE BARIUM PRECURSOR
Authors: SHAMLIAN SH HITCHMAN ML COOK SL RICHARDS BC
Citation: Sh. Shamlian et al., METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF YBCO USING A NEW, STABLE AND VOLATILE BARIUM PRECURSOR, Journal of materials chemistry, 4(1), 1994, pp. 81-85
AN INVESTIGATION OF THE FACTORS CONTROLLING THE STAINING AND DESTAINING OF ELECTROPHORESIS GELS
Authors: HITCHMAN ML EKSTROM B
Citation: Ml. Hitchman et B. Ekstrom, AN INVESTIGATION OF THE FACTORS CONTROLLING THE STAINING AND DESTAINING OF ELECTROPHORESIS GELS, Electrophoresis, 15(2), 1994, pp. 200-208
A STUDY OF THE ELECTROCHEMICAL PROPERTIES OF NIRESIST IN 3-PERCENT SODIUM-CHLORIDE SOLUTION
Authors: SMART NG HITCHMAN ML ANSELL RO FORTUNE JD
Citation: Ng. Smart et al., A STUDY OF THE ELECTROCHEMICAL PROPERTIES OF NIRESIST IN 3-PERCENT SODIUM-CHLORIDE SOLUTION, Corrosion science, 36(9), 1994, pp. 1473-1489
AN INVESTIGATION OF THE RELATIVE ROLES OF KINETICS AND TRANSPORT IN CATHODIC INHIBITION
Authors: HITCHMAN ML MELDRUM G TSAI WT WALSH FC
Citation: Ml. Hitchman et al., AN INVESTIGATION OF THE RELATIVE ROLES OF KINETICS AND TRANSPORT IN CATHODIC INHIBITION, Corrosion science, 36(7), 1994, pp. 1237-1246
CHROMIUM(VI) DETERMINATION AT A ROTATING-DISC ELECTRODE
Authors: SMART NG HITCHMAN ML ANSELL RO FORTUNE JD
Citation: Ng. Smart et al., CHROMIUM(VI) DETERMINATION AT A ROTATING-DISC ELECTRODE, Analytica chimica acta, 292(1-2), 1994, pp. 77-80
A CONSIDERATION OF ADSORPTION PROCESSES IN THE CVD OF POLYSILICON
Authors: HITCHMAN ML ZHAO J
Citation: Ml. Hitchman et J. Zhao, A CONSIDERATION OF ADSORPTION PROCESSES IN THE CVD OF POLYSILICON, Journal de physique. IV, 3(C3), 1993, pp. 115-122
A STUDY OF REMOTE PLASMA-ENHANCED CVD OF SILICON-NITRIDE FILMS
Authors: ALEXANDROV SE HITCHMAN ML SHAMLIAN S
Citation: Se. Alexandrov et al., A STUDY OF REMOTE PLASMA-ENHANCED CVD OF SILICON-NITRIDE FILMS, Journal de physique. IV, 3(C3), 1993, pp. 233-240
POTENTIOMETRIC MONITORING OF PROTEINS .6. INDIRECT POTENTIOMETRY
Authors: HITCHMAN ML NYASULU FWM
Citation: Ml. Hitchman et Fwm. Nyasulu, POTENTIOMETRIC MONITORING OF PROTEINS .6. INDIRECT POTENTIOMETRY, Talanta, 40(9), 1993, pp. 1449-1459
Risultati: 1-25 | 26-44 |