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Results: 1-25/37
Authors:
OHASHI M
SAEKI T
KITADA T
SHIMOMURA S
OKAMOTO Y
HIYAMIZU S
Citation: M. Ohashi et al., SUPER-FLAT INTERFACES IN PSEUDOMORPHIC INXGA1-XAS AL0.28GA0.72AS QUANTUM-WELLS WITH HIGH IN CONTENT (X = 0.15) GROWN ON (411)A GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, JPN J A P 1, 37(8), 1998, pp. 4515-4517
Authors:
TOMITA N
TAKEKAWA K
OHTA K
SHIMOMURA S
HIYAMIZU S
FUJITA K
EGAMI N
OKAMOTO Y
Citation: N. Tomita et al., PHOTOLUMINESCENCE STUDY ON 20 GAAS AL0.3GA0.7AS TILTED T-SHAPED QUANTUM WIRES FABRICATED BY GLANCING-ANGLE MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 575-577
Authors:
KITADA T
SAEKI T
OHASHI M
SHIMOMURA S
ADACHI A
OKAMOTO Y
SANO N
HIYAMIZU S
Citation: T. Kitada et al., SUPER-FLAT INTERFACES IN IN0.53GA0.47AS IN0.52AL0.48AS QUANTUM-WELLS GROWN ON (411)A INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Journal of electronic materials, 27(9), 1998, pp. 1043-1046
Authors:
SHIMOMURA S
SHINOHARA K
KASAHARA K
HIYAMIZU S
Citation: S. Shimomura et al., ELECTRON-MOBILITY IN SELECTIVELY SI-DOPED GAAS N-AL0.3GA0.7AS QUANTUM-WELL HETEROSTRUCTURES WITH SUPER-FLAT INTERFACES GROWN ON (411)A GAASSUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Microelectronic engineering, 43-4, 1998, pp. 213-219
Authors:
HIYAMIZU S
HIGASHIWAKI M
YAMAMOTO M
SHIMOMURA S
Citation: S. Hiyamizu et al., HIGH-DENSITY IN0.14GA0.86AS (GAAS)(5)(ALAS)(5) QUANTUM WIRES NATURALLY FORMED ON (775)B-ORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Microelectronic engineering, 43-4, 1998, pp. 335-340
Authors:
KITADA T
SAEKI T
OHASHI M
SHIMOMURA S
HIYAMIZU S
Citation: T. Kitada et al., EXTREMELY UNIFORM IN0.08GA0.92AS GAAS SUPERLATTICE GROWN ON A (411)A GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY/, Solid-state electronics, 42(7-8), 1998, pp. 1575-1579
Authors:
HIGASHIWAKI M
KUROYANAGI K
FUJITA K
EGAMI N
SHIMOMURA S
HIYAMIZU S
Citation: M. Higashiwaki et al., TEMPERATURE-DEPENDENCE OF EXCITON LIFETIMES IN HIGH-DENSITY GAAS (GAAS)(4)(ALAS)(2) QUANTUM WIRES GROWN ON (775)B-ORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Solid-state electronics, 42(7-8), 1998, pp. 1581-1585
Authors:
SAEKI T
MOTOKAWA T
KITADA T
SHIMOMURA S
ADACHI A
OKAMOTO Y
SANO N
HIYAMIZU S
Citation: T. Saeki et al., EXTREMELY FLAT INTERFACES IN INXGA1-XAS AL0.3GA0.7AS QUANTUM-WELLS GROWN ON (411)A GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, JPN J A P 1, 36(3B), 1997, pp. 1786-1788
Authors:
YAMAMOTO M
HIGASHIWAKI M
SHIMOMURA S
SANO N
HIYAMIZU S
Citation: M. Yamamoto et al., SURFACE CORRUGATION OF GAAS-LAYERS GROWN ON (775)B-ORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY, JPN J A P 1, 36(10), 1997, pp. 6285-6289
Authors:
HIYAMIZU S
SAEKI T
MOTOKAWA T
SHIMOMURA S
KITADA T
ADACHI A
OKAMOTO Y
KUSUNOKI T
NAKAJIMA K
SANO N
Citation: S. Hiyamizu et al., EXTREMELY FLAT INTERFACES IN IN0.04GA0.96AS AL0.3GA0.7AS QUANTUM-WELLS GROWN ON (411)A IN0.04GA0.96AS SUBSTRATES BY MBE/, Superlattices and microstructures, 21(1), 1997, pp. 107-111
Authors:
SHINOHARA K
KASAHARA K
SHIMOMURA S
ADACHI A
OKAMOTO Y
SANO N
HIYAMIZU S
Citation: K. Shinohara et al., AS-4 PRESSURE-DEPENDENCE OF THE INTERFACE FLATNESS OF GAAS AL0.3GA0.7AS QUANTUM-WELLS GROWN ON (411)A GAAS SUBSTRATES BY MBE/, Applied surface science, 114, 1997, pp. 73-78
Authors:
TOMITA N
KISHI T
TAKEKAWA K
FUJITA K
WATANABE T
ADACHI A
SHIMOMURA S
HIYAMIZU S
Citation: N. Tomita et al., IMPROVED OPTICAL QUALITIES OF GAAS AL0.3GA0.7AS TILTED T-SHAPED QUANTUM WIRES FABRICATED BY GLANCING-ANGLE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 175, 1997, pp. 809-813
Authors:
HIGASHIWAKI M
YAMAMOTO M
SHIMOMURA S
ADACHI A
HIYAMIZU S
Citation: M. Higashiwaki et al., HIGH-DENSITY GAAS (GAAS)(2)(ALAS)(2) QUANTUM WIRES NATURALLY FORMED ON (775)B-ORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 175, 1997, pp. 814-818
Authors:
SHINOHARA K
KASAHARA K
SHIMOMURA S
ADACHI A
SANO N
HIYAMIZU S
Citation: K. Shinohara et al., GAAS ALAS RESONANT-TUNNELING DIODES WITH SUPER-FLAT INTERFACES GROWN ON (411)A GAAS SUBSTRATES BY MBE/, Journal of crystal growth, 175, 1997, pp. 924-929
Authors:
HIGASHIWAKI M
YAMAMOTO M
SHIMOMURA S
HIYAMIZU S
Citation: M. Higashiwaki et al., HIGHLY UNIFORM AND HIGH-DENSITY GAAS (GAAS)(4)(ALAS)(2) QUANTUM WIRESGROWN ON (775)B-ORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 71(14), 1997, pp. 2005-2007
Authors:
TOMITA N
TANAKA M
SAEKI T
SHIMOMURA S
HIYAMIZU S
FUJITA K
WATANABE T
HIGUCHI T
SANO N
ADACHI A
Citation: N. Tomita et al., IMPROVED CATHODOLUMINESCENCE PROPERTIES OF GAAS AL0.3GA0.7AS TILTED T-SHAPED QUANTUM WIRES FABRICATED ON (111)B FACET BY GLANCING-ANGLE MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3550-3554
Authors:
SHINOHARA K
MOTOKAWA T
KASAHARA K
SHIMOMURA S
SANO N
ADACHI A
HIYAMIZU S
Citation: K. Shinohara et al., ELECTRICAL-PROPERTIES OF SI-DOPED GAAS-LAYERS GROWN ON (411)A GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 11(1), 1996, pp. 125-128
Authors:
SHIMOMURA S
SHINOHARA K
KASAHARA K
MOTOKAWA T
ADACHI A
OKAMOTO Y
SANO N
HIYAMIZU S
Citation: S. Shimomura et al., GAAS AL0.3GA0.7AS RESONANT-TUNNELING DIODES WITH ATOMICALLY FLAT INTERFACES GROWN ON (411)A GAAS SUBSTRATES BY MBE/, Solid-state electronics, 40(1-8), 1996, pp. 417-420
Authors:
SHIMOMURA S
SHINOHARA K
KITADA T
HIYAMIZU S
TSUDA Y
SANO N
ADACHI A
OKAMOTO Y
Citation: S. Shimomura et al., MUCH IMPROVED INTERFACES IN GAAS ALAS QUANTUM-WELLS GROWN ON (411)A GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 696-698
Authors:
MARX D
MIYAMOTO K
ASAHI H
LIU XF
VILLAFLOR AB
MIKI K
GONDA S
SHIMOMURA S
HIYAMIZU S
Citation: D. Marx et al., METALORGANIC MOLECULAR-BEAM EPITAXY OF GASB ON PATTERNED GASB SUBSTRATES USING TRIETHYLGALLIUM AND SB-4, Journal of crystal growth, 150(1-4), 1995, pp. 874-878
Authors:
HIYAMIZU S
SHIRAKI Y
GONDA S
Citation: S. Hiyamizu et al., PROCEEDINGS OF THE 8TH INTERNATIONAL-CONFERENCE ON MOLECULAR-BEAM EPITAXY - TOYONAKA, OSAKA, JAPAN, 29 AUGUST TO 2 SEPTEMBER 1994, Journal of crystal growth, 150(1-4), 1995, pp. 11-11
Authors:
LIU Y
YAMAMOTO N
NISHIMOTO Y
KAMIKUBO N
SHIMOMURA S
GAMO K
MURASE K
SANO N
ADACHI A
FUJITA K
WATANABE T
HIYAMIZU S
Citation: Y. Liu et al., INXGA1-XAS GAAS QUANTUM-WIRE STRUCTURES GROWN ON GAAS (100) PATTERNEDSUBSTRATES WITH [001] RIDGES/, Journal of crystal growth, 150(1-4), 1995, pp. 299-305
Authors:
TOMITA N
YOSHIDA N
SHIMOMURA S
MURASE K
ADACHI A
HIYAMIZU S
Citation: N. Tomita et al., SELECTIVE-AREA GROWTH OF GAAS USING A GA BEAM WITH A STEP-FUNCTION LATERAL INTENSITY PROFILE, Journal of crystal growth, 150(1-4), 1995, pp. 377-382
Authors:
TANAKA M
TOMITA N
HIGUCHI T
SHIMOMURA S
ADACHI A
SANO N
HIYAMIZU S
Citation: M. Tanaka et al., TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF GAAS AL0.3GA0.7AS T-SHAPED QUANTUM-WELL STRUCTURE FABRICATED BY GLANCING ANGLE MOLECULAR-BEAM EPITAXY ON GAAS(100) REVERSE-MESA ETCHED SUBSTRATES/, Journal of crystal growth, 150(1-4), 1995, pp. 388-393
Authors:
SHIMOMURA S
KANEKO S
MOTOKAWA T
SHINOHARA K
ADACHI A
OKAMOTO Y
SANO N
MURASE K
HIYAMIZU S
Citation: S. Shimomura et al., EXTREMELY FLAT INTERFACES IN GAAS ALGAAS QUANTUM-WELLS WITH HIGH AL CONTENT (0.7) GROWN ON GAAS (411)A SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 150(1-4), 1995, pp. 409-414