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Results: 1-19 |
Results: 19
VERIFICATION OF LATERAL SECONDARY-ION MASS-SPECTROMETRY AS A METHOD FOR MEASURING LATERAL DOPANT DOSE DISTRIBUTIONS IN MICROELECTRONICS TEST STRUCTURES
Authors: VONCRIEGERN R JAHNEL F LANGEGIESELER R PEARSON P HOBLER G SIMIONESCU A
Citation: R. Voncriegern et al., VERIFICATION OF LATERAL SECONDARY-ION MASS-SPECTROMETRY AS A METHOD FOR MEASURING LATERAL DOPANT DOSE DISTRIBUTIONS IN MICROELECTRONICS TEST STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 386-393
MODELING OF THE ION MASS EFFECT ON TRANSIENT ENHANCED DIFFUSION - DEVIATION FROM THE -MODEL(1)
Authors: PELAZ L GILMER GH JARAIZ M HERNER SB GOSSMANN HJ EAGLESHAM DJ HOBLER G RAFFERTY CS BARBOLLA J
Citation: L. Pelaz et al., MODELING OF THE ION MASS EFFECT ON TRANSIENT ENHANCED DIFFUSION - DEVIATION FROM THE -MODEL(1), Applied physics letters, 73(10), 1998, pp. 1421-1423
MODEL-INDEPENDENT DETERMINATION OF 2D STRAIN DISTRIBUTION IN ION-IMPLANTED SILICON-CRYSTALS FROM X-RAY-DIFFRACTION DATA
Authors: NIKULIN AY STEVENSON AW HASHIZUME H COOKSON D HOBLER G WILKINS SW
Citation: Ay. Nikulin et al., MODEL-INDEPENDENT DETERMINATION OF 2D STRAIN DISTRIBUTION IN ION-IMPLANTED SILICON-CRYSTALS FROM X-RAY-DIFFRACTION DATA, Semiconductor science and technology, 12(3), 1997, pp. 350-354
VERIFICATION OF MODELS FOR THE SIMULATION OF BORON IMPLANTATION INTO CRYSTALLINE SILICON
Authors: HOBLER G SIMIONESCU A PALMETSHOFER L JAHNEL F VONCRIEGERN R TIAN C STINGEDER G
Citation: G. Hobler et al., VERIFICATION OF MODELS FOR THE SIMULATION OF BORON IMPLANTATION INTO CRYSTALLINE SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 272-277
CRITICAL ANGLES AND LOW-ENERGY LIMITS TO ION CHANNELING IN SILICON
Authors: HOBLER G
Citation: G. Hobler, CRITICAL ANGLES AND LOW-ENERGY LIMITS TO ION CHANNELING IN SILICON, Radiation effects and defects in solids, 139(1), 1996, pp. 21-85
THEORETICAL ESTIMATE OF THE LOW-ENERGY LIMIT TO ION CHANNELING
Authors: HOBLER G
Citation: G. Hobler, THEORETICAL ESTIMATE OF THE LOW-ENERGY LIMIT TO ION CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 115(1-4), 1996, pp. 323-327
COMPUTER-SIMULATION OF OXYGEN PRECIPITATION IN CZOCHRALSKI-GROWN SILICON DURING HI-LO-HI ANNEALS
Authors: ESFANDYARI J SCHMEISER C SENKADER S HOBLER G MURPHY B
Citation: J. Esfandyari et al., COMPUTER-SIMULATION OF OXYGEN PRECIPITATION IN CZOCHRALSKI-GROWN SILICON DURING HI-LO-HI ANNEALS, Journal of the Electrochemical Society, 143(3), 1996, pp. 995-1001
DETERMINATION OF THE OXIDE-PRECIPITATE-SILICON-MATRIX INTERFACE ENERGY BY CONSIDERING THE CHANGE OF PRECIPITATE MORPHOLOGY
Authors: SENKADER S HOBLER G SCHMEISER C
Citation: S. Senkader et al., DETERMINATION OF THE OXIDE-PRECIPITATE-SILICON-MATRIX INTERFACE ENERGY BY CONSIDERING THE CHANGE OF PRECIPITATE MORPHOLOGY, Applied physics letters, 69(15), 1996, pp. 2202-2204
MONTE-CARLO SIMULATION OF 2-DIMENSIONAL IMPLANTED DOPANT DISTRIBUTIONS AT MASK EDGES
Authors: HOBLER G
Citation: G. Hobler, MONTE-CARLO SIMULATION OF 2-DIMENSIONAL IMPLANTED DOPANT DISTRIBUTIONS AT MASK EDGES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 155-162
MODEL FOR THE ELECTRONIC STOPPING OF CHANNELED IONS IN SILICON AROUNDTHE STOPPING POWER MAXIMUM
Authors: SIMIONESCU A HOBLER G BOGEN S FREY L RYSSEL H
Citation: A. Simionescu et al., MODEL FOR THE ELECTRONIC STOPPING OF CHANNELED IONS IN SILICON AROUNDTHE STOPPING POWER MAXIMUM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 47-50
ACCELERATION OF BINARY COLLISION SIMULATIONS IN CRYSTALLINE TARGETS USING CRITICAL ANGLES FOR ION CHANNELING
Authors: HOBLER G SIMIONESCU A
Citation: G. Hobler et A. Simionescu, ACCELERATION OF BINARY COLLISION SIMULATIONS IN CRYSTALLINE TARGETS USING CRITICAL ANGLES FOR ION CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 24-28
ROUND-ROBIN COMPUTER-SIMULATION OF ION TRANSMISSION THROUGH CRYSTALLINE LAYERS
Authors: GARTNER K STOCK D WEBER B BETZ G HAUTALA M HOBLER G HOU M SARITE S ECKSTEIN W JIMENEZRODRIGUEZ JJ PEREZMARTIN AMC ANDRIBET EP KONOPLEV V GRASMARTI A POSSELT M SHAPIRO MH TOMBRELLO TA URBASSEK HM HENSEL H YAMAMURA Y TAKEUCHI W
Citation: K. Gartner et al., ROUND-ROBIN COMPUTER-SIMULATION OF ION TRANSMISSION THROUGH CRYSTALLINE LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 183-197
MODELING OF ELECTRONIC STOPPING AND DAMAGE ACCUMULATION DURING ARSENIC IMPLANTATION IN SILICON
Authors: SIMIONESCU A HERZOG S HOBLER G SCHORK R LORENZ J TIAN C STINGEDER G
Citation: A. Simionescu et al., MODELING OF ELECTRONIC STOPPING AND DAMAGE ACCUMULATION DURING ARSENIC IMPLANTATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 100(4), 1995, pp. 483-489
A MODEL FOR OXYGEN PRECIPITATION IN SILICON INCLUDING BULK STACKING-FAULT GROWTH
Authors: SENKADER S ESFANDYARI J HOBLER G
Citation: S. Senkader et al., A MODEL FOR OXYGEN PRECIPITATION IN SILICON INCLUDING BULK STACKING-FAULT GROWTH, Journal of applied physics, 78(11), 1995, pp. 6469-6476
BORON CHANNELING IMPLANTATIONS IN SILICON - MODELING OF ELECTRONIC STOPPING AND DAMAGE ACCUMULATION
Authors: HOBLER G SIMIONESCU A PALMETSHOFER L TIAN C STINGEDER G
Citation: G. Hobler et al., BORON CHANNELING IMPLANTATIONS IN SILICON - MODELING OF ELECTRONIC STOPPING AND DAMAGE ACCUMULATION, Journal of applied physics, 77(8), 1995, pp. 3697-3703
DETERMINATION OF SILICON POINT-DEFECT PARAMETERS AND REACTION BARRIERENERGIES FROM GOLD DIFFUSION EXPERIMENTS
Authors: GHADERI K HOBLER G BUDIL M MADER L SCHULZE HJ
Citation: K. Ghaderi et al., DETERMINATION OF SILICON POINT-DEFECT PARAMETERS AND REACTION BARRIERENERGIES FROM GOLD DIFFUSION EXPERIMENTS, Journal of applied physics, 77(3), 1995, pp. 1320-1322
SIMULATION OF PHOSPHORUS DIFFUSION IN SILICON USING A PAIR DIFFUSION-MODEL WITH A REDUCED NUMBER OF PARAMETERS
Authors: GHADERI K HOBLER G
Citation: K. Ghaderi et G. Hobler, SIMULATION OF PHOSPHORUS DIFFUSION IN SILICON USING A PAIR DIFFUSION-MODEL WITH A REDUCED NUMBER OF PARAMETERS, Journal of the Electrochemical Society, 142(5), 1995, pp. 1654-1658
NUMERICAL-ANALYSIS OF TRANSIENT TEMPERATURE DISTRIBUTIONS DURING LASER SOLDERING
Authors: NICOLICS J HOBLER G
Citation: J. Nicolics et G. Hobler, NUMERICAL-ANALYSIS OF TRANSIENT TEMPERATURE DISTRIBUTIONS DURING LASER SOLDERING, Compel, 13(4), 1994, pp. 845-860
EFFICIENT SIMULATION OF 3-D STRESS DISTRIBUTIONS AT TRENCH STRUCTURESCAUSED BY THERMAL MISMATCH OF TRENCH FILLING AND SILICON SUBSTRATE
Authors: SLEHOBR R HOBLER G
Citation: R. Slehobr et G. Hobler, EFFICIENT SIMULATION OF 3-D STRESS DISTRIBUTIONS AT TRENCH STRUCTURESCAUSED BY THERMAL MISMATCH OF TRENCH FILLING AND SILICON SUBSTRATE, Compel, 13(4), 1994, pp. 861-870
Risultati: 1-19 |