ACNP - Italian Periodicals Catalogue

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Results: 1-25 |

Results: 25

X-RAY CHARACTERIZATION OF BURIED DELTA-LAYER

Authors: FALTA J BAHR D MATERLIK G MULLER BH HORNVONHOEGEN M

Citation: J. Falta et al., X-RAY CHARACTERIZATION OF BURIED DELTA-LAYER, Surface review and letters, 5(1), 1998, pp. 145-149

SURFACTANT-GROWN LOW-DOPED GERMANIUM LAYERS ON SILICON WITH HIGH ELECTRON MOBILITIES

Authors: HOFMANN KR REINKING D KAMMLER M HORNVONHOEGEN M

Citation: Kr. Hofmann et al., SURFACTANT-GROWN LOW-DOPED GERMANIUM LAYERS ON SILICON WITH HIGH ELECTRON MOBILITIES, Thin solid films, 321, 1998, pp. 125-130

MACROSCOPIC ONE-DIMENSIONAL FACETING OF SI(100) UPON AU ADSORPTION

Authors: HORNVONHOEGEN M MINODA H YAGI K HERINGDORF FMZ KAHLER D

Citation: M. Hornvonhoegen et al., MACROSCOPIC ONE-DIMENSIONAL FACETING OF SI(100) UPON AU ADSORPTION, Surface science, 404(1-3), 1998, pp. 464-469

HIGH ELECTRON MOBILITIES IN SURFACTANT-GROWN GERMANIUM ON SILICON SUBSTRATES

Authors: REINKING D KAMMLER M HORNVONHOEGEN M HOFMANN KR

Citation: D. Reinking et al., HIGH ELECTRON MOBILITIES IN SURFACTANT-GROWN GERMANIUM ON SILICON SUBSTRATES, JPN J A P 2, 36(8B), 1997, pp. 1082-1084

AG-MEDIATED STEP-BUNCHING INSTABILITY ON VICINAL SI(100)

Authors: FOLSCH S MEYER G RIEDER KH HORNVONHOEGEN M SCHMIDT T HENZLER M

Citation: S. Folsch et al., AG-MEDIATED STEP-BUNCHING INSTABILITY ON VICINAL SI(100), Surface science, 394(1-3), 1997, pp. 60-70

ENHANCED SB SEGREGATION IN SURFACTANT-MEDIATED-HETEROEPITAXY - HIGH-MOBILITY, LOW-DOPED GE ON SI

Authors: REINKING D KAMMLER M HORNVONHOEGEN M HOFMANN KR

Citation: D. Reinking et al., ENHANCED SB SEGREGATION IN SURFACTANT-MEDIATED-HETEROEPITAXY - HIGH-MOBILITY, LOW-DOPED GE ON SI, Applied physics letters, 71(7), 1997, pp. 924-926

X-RAY INTERFACE CHARACTERIZATION OF GE-DELTA-LAYERS ON SI(001)

Authors: BAHR D FALTA J MATERLIK G MULLER BH HORNVONHOEGEN M

Citation: D. Bahr et al., X-RAY INTERFACE CHARACTERIZATION OF GE-DELTA-LAYERS ON SI(001), Physica. B, Condensed matter, 221(1-4), 1996, pp. 96-100

ADSORBATE-INDUCED CHANGE OF EQUILIBRIUM SURFACE DURING CRYSTAL-GROWTH- SI ON SI(111) H/

Authors: HORNVONHOEGEN M GOLLA A

Citation: M. Hornvonhoegen et A. Golla, ADSORBATE-INDUCED CHANGE OF EQUILIBRIUM SURFACE DURING CRYSTAL-GROWTH- SI ON SI(111) H/, Physical review letters, 76(16), 1996, pp. 2953-2956

STRESS REDUCTION AND INTERFACE QUALITY OF BURIED SB DELTA-DOPING LAYERS ON SI(001)

Authors: FALTA J BAHR D HILLE A MATERLIK G KAMMLER M HORNVONHOEGEN M

Citation: J. Falta et al., STRESS REDUCTION AND INTERFACE QUALITY OF BURIED SB DELTA-DOPING LAYERS ON SI(001), Applied physics letters, 69(19), 1996, pp. 2906-2908

TOWARDS PERFECT GE-DELTA LAYERS ON SI(001)

Authors: FALTA J BAHR D MATERLIK G MULLER BH HORNVONHOEGEN M

Citation: J. Falta et al., TOWARDS PERFECT GE-DELTA LAYERS ON SI(001), Applied physics letters, 68(10), 1996, pp. 1394-1396

RECONSTRUCTION-DEPENDENT ORIENTATION OF AG(111) FILMS ON SI(001)

Authors: FOLSCH S MEYER G WINAU D RIEDER KH HORNVONHOEGEN M SCHMIDT T HENZLER M

Citation: S. Folsch et al., RECONSTRUCTION-DEPENDENT ORIENTATION OF AG(111) FILMS ON SI(001), Physical review. B, Condensed matter, 52(19), 1995, pp. 13745-13748

LATTICE ACCOMMODATION OF LOW-INDEX PLANES - AG(111) ON SI(001)

Authors: HORNVONHOEGEN M SCHMIDT T MEYER G WINAU D RIEDER KH

Citation: M. Hornvonhoegen et al., LATTICE ACCOMMODATION OF LOW-INDEX PLANES - AG(111) ON SI(001), Physical review. B, Condensed matter, 52(15), 1995, pp. 10764-10767

INTERFACE ROUGHENING OF GE DELTA-LAYERS ON SI(111)

Authors: FALTA J GOG T MATERLIK G MULLER BH HORNVONHOEGEN M

Citation: J. Falta et al., INTERFACE ROUGHENING OF GE DELTA-LAYERS ON SI(111), Physical review. B, Condensed matter, 51(12), 1995, pp. 7598-7602

INFLUENCE OF H ON LOW-TEMPERATURE SI(111) HOMOEPITAXY

Authors: HORNVONHOEGEN M GOLLA A

Citation: M. Hornvonhoegen et A. Golla, INFLUENCE OF H ON LOW-TEMPERATURE SI(111) HOMOEPITAXY, Surface science, 337(1-2), 1995, pp. 777-782

SURFACTANTS IN SI(111) HOMOEPITAXY

Authors: HORNVONHOEGEN M FALTA J COPEL M TROMP RM

Citation: M. Hornvonhoegen et al., SURFACTANTS IN SI(111) HOMOEPITAXY, Applied physics letters, 66(4), 1995, pp. 487-489

SURFACTANTS - PERFECT HETEROEPITAXY OF GE ON SI(111)

Authors: HORNVONHOEGEN M

Citation: M. Hornvonhoegen, SURFACTANTS - PERFECT HETEROEPITAXY OF GE ON SI(111), Applied physics. A, Solids and surfaces, 59(5), 1994, pp. 503-515

STRAIN RELIEF BY MICROROUGHNESS IN SURFACTANT-MEDIATED GROWTH OF GE ON SI(001)

Authors: HORNVONHOEGEN M MULLER BH ALFALOU A

Citation: M. Hornvonhoegen et al., STRAIN RELIEF BY MICROROUGHNESS IN SURFACTANT-MEDIATED GROWTH OF GE ON SI(001), Physical review. B, Condensed matter, 50(16), 1994, pp. 11640-11652

SURFACTANT-MEDIATED GROWTH OF GE ON SI(111)

Authors: HORNVONHOEGEN M COPEL M TSANG JC REUTER MC TROMP RM

Citation: M. Hornvonhoegen et al., SURFACTANT-MEDIATED GROWTH OF GE ON SI(111), Physical review. B, Condensed matter, 50(15), 1994, pp. 10811-10822

SURFACTANT-MEDIATED GROWTH OF GE ON SI(111)

Authors: HORNVONHOEGEN M COPEL M TSANG JC REUTER MC TROMP RM

Citation: M. Hornvonhoegen et al., SURFACTANT-MEDIATED GROWTH OF GE ON SI(111), Physical review. B, Condensed matter, 50(15), 1994, pp. 10811-10822

SURFACTANT-STABILIZED STRAINED GE CONES ON SI(001)

Authors: HORNVONHOEGEN M ALFALOU A MULLER BH KOHLER U ANDERSOHN L DAHLHEIMER B HENZLER M

Citation: M. Hornvonhoegen et al., SURFACTANT-STABILIZED STRAINED GE CONES ON SI(001), Physical review. B, Condensed matter, 49(4), 1994, pp. 2637-2650

HOMOEPITAXY OF SI(111) IS SURFACE DEFECT-MEDIATED

Authors: HORNVONHOEGEN M PIETSCH H

Citation: M. Hornvonhoegen et H. Pietsch, HOMOEPITAXY OF SI(111) IS SURFACE DEFECT-MEDIATED, Surface science, 321(1-2), 1994, pp. 120000129-120000136

LATTICE MATCHING PERIODIC INTERFACIAL DISLOCATION NETWORK IN SURFACTANT-MEDIATED GROWTH OF GE ON SI(111)

Authors: HORNVONHOEGEN M HENZLER M

Citation: M. Hornvonhoegen et M. Henzler, LATTICE MATCHING PERIODIC INTERFACIAL DISLOCATION NETWORK IN SURFACTANT-MEDIATED GROWTH OF GE ON SI(111), Physica status solidi. a, Applied research, 146(1), 1994, pp. 337-352

SURFACE-MORPHOLOGY AND STRAIN RELIEF IN SURFACTANT-MEDIATED GROWTH OFGERMANIUM ON SILICON(111)

Authors: HORNVONHOEGEN M POOK M ALFALOU A MULLER BH HENZLER M

Citation: M. Hornvonhoegen et al., SURFACE-MORPHOLOGY AND STRAIN RELIEF IN SURFACTANT-MEDIATED GROWTH OFGERMANIUM ON SILICON(111), Scanning microscopy, 7(2), 1993, pp. 481-488

FORMATION OF INTERFACIAL DISLOCATION NETWORK IN SURFACTANT-MEDIATED GROWTH OF GE ON SI(111) INVESTIGATED BY SPA-LEED .1.

Authors: HORNVONHOEGEN M ALFALOU A PIETSCH H MULLER BH HENZLER M

Citation: M. Hornvonhoegen et al., FORMATION OF INTERFACIAL DISLOCATION NETWORK IN SURFACTANT-MEDIATED GROWTH OF GE ON SI(111) INVESTIGATED BY SPA-LEED .1., Surface science, 298(1), 1993, pp. 29-42

SURFACTANT-INDUCED REVERSIBLE CHANGES OF SURFACE-MORPHOLOGY

Authors: HORNVONHOEGEN M MULLER BH ALFALOU A HENZLER M

Citation: M. Hornvonhoegen et al., SURFACTANT-INDUCED REVERSIBLE CHANGES OF SURFACE-MORPHOLOGY, Physical review letters, 71(19), 1993, pp. 3170-3173

Risultati: 1-25 |