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Results: 1-23 |
Results: 23
CARBON VACANCIES IN TITANIUM CARBIDE (VOL 5, PG 187, 1997)
Authors: TAN KE BRATKOVSKY AM HARRIS RM HORSFIELD AP NGUYENMANH D PETTIFOR DG SUTTON AP
Citation: Ke. Tan et al., CARBON VACANCIES IN TITANIUM CARBIDE (VOL 5, PG 187, 1997), Modelling and simulation in materials science and engineering, 6(3), 1998, pp. 335-335
HYDROGEN DIFFUSION ON SI(001) STUDIED WITH THE LOCAL-DENSITY APPROXIMATION AND TIGHT-BINDING
Authors: BOWLER DR FEARN M GORINGE CM HORSFIELD AP PETTIFOR DG
Citation: Dr. Bowler et al., HYDROGEN DIFFUSION ON SI(001) STUDIED WITH THE LOCAL-DENSITY APPROXIMATION AND TIGHT-BINDING, Journal of physics. Condensed matter, 10(17), 1998, pp. 3719-3730
BOND ORDER POTENTIALS FOR COVALENT SYSTEMS
Authors: HORSFIELD AP
Citation: Ap. Horsfield, BOND ORDER POTENTIALS FOR COVALENT SYSTEMS, Journal of phase equilibria, 18(6), 1997, pp. 573-579
TIGHT-BINDING BOND ORDER POTENTIAL AND FORCES FOR ATOMISTIC SIMULATIONS
Authors: AOKI M HORSFIELD AP PETTIFOR DG
Citation: M. Aoki et al., TIGHT-BINDING BOND ORDER POTENTIAL AND FORCES FOR ATOMISTIC SIMULATIONS, Journal of phase equilibria, 18(6), 1997, pp. 614-623
A SIMPLIFIED DENSITY-FUNCTIONAL THEORY STUDY OF TRIBOELECTRONIC LUBRICANT DEGRADATION
Authors: HORSFIELD AP HARKINS CG
Citation: Ap. Horsfield et Cg. Harkins, A SIMPLIFIED DENSITY-FUNCTIONAL THEORY STUDY OF TRIBOELECTRONIC LUBRICANT DEGRADATION, Modelling and simulation in materials science and engineering, 5(4), 1997, pp. 311-315
CARBON VACANCIES IN TITANIUM CARBIDE
Authors: TAN KE BRATKOVSKY AM HARRIS RM HORSFIELD AP NGUYENMANH D PETTIFOR DG SUTTON AP
Citation: Ke. Tan et al., CARBON VACANCIES IN TITANIUM CARBIDE, Modelling and simulation in materials science and engineering, 5(3), 1997, pp. 187-198
A COMPARISON OF LINEAR SCALING TIGHT-BINDING METHODS
Authors: BOWLER DR AOKI M GORINGE CM HORSFIELD AP PETTIFOR DG
Citation: Dr. Bowler et al., A COMPARISON OF LINEAR SCALING TIGHT-BINDING METHODS, Modelling and simulation in materials science and engineering, 5(3), 1997, pp. 199-222
EFFICIENT AB-INITIO TIGHT-BINDING
Authors: HORSFIELD AP
Citation: Ap. Horsfield, EFFICIENT AB-INITIO TIGHT-BINDING, Physical review. B, Condensed matter, 56(11), 1997, pp. 6594-6602
TIGHT-BINDING PARAMETERS FOR SILICON BORON INTERACTIONS WITH APPLICATION TO BORON DEFECT PAIRS IN CRYSTALLINE SILICON
Authors: RASBAND PB HORSFIELD AP CLANCY P
Citation: Pb. Rasband et al., TIGHT-BINDING PARAMETERS FOR SILICON BORON INTERACTIONS WITH APPLICATION TO BORON DEFECT PAIRS IN CRYSTALLINE SILICON, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(1), 1996, pp. 71-84
A COMPUTATIONALLY EFFICIENT DIFFERENTIABLE TIGHT-BINDING ENERGY FUNCTIONAL
Authors: HORSFIELD AP
Citation: Ap. Horsfield, A COMPUTATIONALLY EFFICIENT DIFFERENTIABLE TIGHT-BINDING ENERGY FUNCTIONAL, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 219-223
TIGHT-BINDING THEORY AND COMPUTATIONAL MATERIALS SYNTHESIS
Authors: SUTTON AP GODWIN PD HORSFIELD AP
Citation: Ap. Sutton et al., TIGHT-BINDING THEORY AND COMPUTATIONAL MATERIALS SYNTHESIS, MRS bulletin, 21(2), 1996, pp. 42-48
COMPUTATIONAL MATERIALS SYNTHESIS .1. A TIGHT-BINDING SCHEME FOR HYDROCARBONS
Authors: HORSFIELD AP GODWIN PD PETTIFOR DG SUTTON AP
Citation: Ap. Horsfield et al., COMPUTATIONAL MATERIALS SYNTHESIS .1. A TIGHT-BINDING SCHEME FOR HYDROCARBONS, Physical review. B, Condensed matter, 54(22), 1996, pp. 15773-15775
COMPUTATIONAL MATERIALS SYNTHESIS .2. A STUDY OF POLYMERIZATION
Authors: GODWIN PD HORSFIELD AP PETTIFOR DG SUTTON AP
Citation: Pd. Godwin et al., COMPUTATIONAL MATERIALS SYNTHESIS .2. A STUDY OF POLYMERIZATION, Physical review. B, Condensed matter, 54(22), 1996, pp. 15776-15784
COMPUTATIONAL MATERIALS SYNTHESIS .3. SYNTHESIS OF HYDROGENATED AMORPHOUS-CARBON FROM MOLECULAR PRECURSORS
Authors: GODWIN PD HORSFIELD AP STONEHAM AM BULL SJ FORD IJ HARKER AH PETTIFOR DG SUTTON AP
Citation: Pd. Godwin et al., COMPUTATIONAL MATERIALS SYNTHESIS .3. SYNTHESIS OF HYDROGENATED AMORPHOUS-CARBON FROM MOLECULAR PRECURSORS, Physical review. B, Condensed matter, 54(22), 1996, pp. 15785-15794
PUCKERING MODELS FOR THE SI(113) SURFACE RECONSTRUCTION
Authors: WANG J HORSFIELD AP PETTIFOR DG PAYNE MC
Citation: J. Wang et al., PUCKERING MODELS FOR THE SI(113) SURFACE RECONSTRUCTION, Physical review. B, Condensed matter, 54(19), 1996, pp. 13744-13747
BOND-ORDER POTENTIAL AND CLUSTER RECURSION FOR THE DESCRIPTION OF CHEMICAL-BONDS - EFFICIENT REAL-SPACE METHODS FOR TIGHT-BINDING MOLECULAR-DYNAMICS
Authors: HORSFIELD AP BRATKOVSKY AM PETTIFOR DG AOKI M
Citation: Ap. Horsfield et al., BOND-ORDER POTENTIAL AND CLUSTER RECURSION FOR THE DESCRIPTION OF CHEMICAL-BONDS - EFFICIENT REAL-SPACE METHODS FOR TIGHT-BINDING MOLECULAR-DYNAMICS, Physical review. B, Condensed matter, 53(3), 1996, pp. 1656-1666
O(N) TIGHT-BINDING METHODS WITH FINITE ELECTRONIC TEMPERATURE
Authors: HORSFIELD AP BRATKOVSKY AM
Citation: Ap. Horsfield et Am. Bratkovsky, O(N) TIGHT-BINDING METHODS WITH FINITE ELECTRONIC TEMPERATURE, Physical review. B, Condensed matter, 53(23), 1996, pp. 15381-15384
BOND-ORDER POTENTIALS - THEORY AND IMPLEMENTATION
Authors: HORSFIELD AP BRATKOVSKY AM FEARN M PETTIFOR DG AOKI M
Citation: Ap. Horsfield et al., BOND-ORDER POTENTIALS - THEORY AND IMPLEMENTATION, Physical review. B, Condensed matter, 53(19), 1996, pp. 12694-12712
WHY TIC(111) IS OBSERVED TO BE TI TERMINATED
Authors: TAN KE FINNIS MW HORSFIELD AP SUTTON AP
Citation: Ke. Tan et al., WHY TIC(111) IS OBSERVED TO BE TI TERMINATED, Surface science, 348(1-2), 1996, pp. 49-54
THEORY FOR THE (1X1) RUMPLED RELAXATIONS AT TIC(001) AND TAC(001) SURFACES
Authors: TAN KE HORSFIELD AP MANH DN PETTIFOR DG SUTTON AP
Citation: Ke. Tan et al., THEORY FOR THE (1X1) RUMPLED RELAXATIONS AT TIC(001) AND TAC(001) SURFACES, Physical review letters, 76(1), 1996, pp. 90-93
DEFECT MODELING - THE NEED FOR ANGULARLY DEPENDENT POTENTIALS
Authors: PETTIFOR DG AOKI M GUMBSCH P HORSFIELD AP MANH DN VITEK V
Citation: Dg. Pettifor et al., DEFECT MODELING - THE NEED FOR ANGULARLY DEPENDENT POTENTIALS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 193, 1995, pp. 24-30
A TIGHT-BINDING MOLECULAR-DYNAMICS SIMULATION OF THE MELTING AND SOLIDIFICATION OF SILICON
Authors: HORSFIELD AP CLANCY P
Citation: Ap. Horsfield et P. Clancy, A TIGHT-BINDING MOLECULAR-DYNAMICS SIMULATION OF THE MELTING AND SOLIDIFICATION OF SILICON, Modelling and simulation in materials science and engineering, 2(2), 1994, pp. 277-294
THE FERMI-SURFACE AND PSEUDOPOTENTIALS OF ALUMINUM
Authors: HORSFIELD AP ASHCROFT NW
Citation: Ap. Horsfield et Nw. Ashcroft, THE FERMI-SURFACE AND PSEUDOPOTENTIALS OF ALUMINUM, Journal of physics. Condensed matter, 5(23), 1993, pp. 3925-3936
Risultati: 1-23 |