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Results: 1-12 |
Results: 12
THE GAS-SENSING PROPERTIES OF TIN OXIDE THIN-FILMS DEPOSITED BY METALLORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: BROWN JR CHENEY MT HAYCOCK PW HOULTON DJ JONES AC WILLIAMS EW
Citation: Jr. Brown et al., THE GAS-SENSING PROPERTIES OF TIN OXIDE THIN-FILMS DEPOSITED BY METALLORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 144(1), 1997, pp. 295-299
ALTERNATIVE PRECURSOR SYSTEMS FOR THE MOCVD OF ALUMINUM NITRIDE AND GALLIUM NITRIDE
Authors: RUSHWORTH SA BROWN JR HOULTON DJ JONES AC ROBERTS V ROBERTS JS CRITCHLOW GW
Citation: Sa. Rushworth et al., ALTERNATIVE PRECURSOR SYSTEMS FOR THE MOCVD OF ALUMINUM NITRIDE AND GALLIUM NITRIDE, Advanced materials for optics and electronics, 6(3), 1996, pp. 119-126
DEPOSITION OF ALUMINUM NITRIDE THIN-FILMS BY MOCVD FROM THE TRIMETHYLALUMINUM-AMMONIA ADDUCT
Authors: JONES AC RUSHWORTH SA HOULTON DJ ROBERTS JS ROBERTS V WHITEHOUSE CR CRITCHLOW GW
Citation: Ac. Jones et al., DEPOSITION OF ALUMINUM NITRIDE THIN-FILMS BY MOCVD FROM THE TRIMETHYLALUMINUM-AMMONIA ADDUCT, CHEMICAL VAPOR DEPOSITION, 2(1), 1996, pp. 5
A NEW ROUTE TO THE DEPOSITION OF AL2O3 BY MOCVD
Authors: JONES AC HOULTON DJ RUSHWORTH SA CRITCHLOW GW
Citation: Ac. Jones et al., A NEW ROUTE TO THE DEPOSITION OF AL2O3 BY MOCVD, Journal de physique. IV, 5(C5), 1995, pp. 557-560
A NEW ROUTE TO THE DEPOSITION OF AL2O3 BY MOCVD
Authors: JONES AC HOULTON DJ RUSHWORTH SA CRITCHLOW GW
Citation: Ac. Jones et al., A NEW ROUTE TO THE DEPOSITION OF AL2O3 BY MOCVD, Journal de physique. IV, 5(C5), 1995, pp. 557-560
THE DEPOSITION OF PLATINUM-CONTAINING TIN OXIDE THIN-FILMS BY METAL-ORGANIC CVD
Authors: HOULTON DJ JONES AC HAYCOCK PW WILLIAMS EW BULL J CRITRCHLOW GW
Citation: Dj. Houlton et al., THE DEPOSITION OF PLATINUM-CONTAINING TIN OXIDE THIN-FILMS BY METAL-ORGANIC CVD, CHEMICAL VAPOR DEPOSITION, 1(1), 1995, pp. 26
THE DEPOSITION OF ALUMINUM THIN-FILMS BY CVD USING A NOVEL ADDUCT OF DIMETHYLALUMINUM HYDRIDE
Authors: JONES AC HOULTON DJ RUSHWORTH SA FLANAGAN JA BROWN JR CRITCHLOW GW
Citation: Ac. Jones et al., THE DEPOSITION OF ALUMINUM THIN-FILMS BY CVD USING A NOVEL ADDUCT OF DIMETHYLALUMINUM HYDRIDE, Advanced materials, 7(7), 1995, pp. 24-26
THE DEPOSITION OF PLATINUM-CONTAINING TIN OXIDE THIN-FILMS BY METAL-ORGANIC CVD
Authors: HOULTON DJ JONES AC HAYCOCK PW WILLIAMS EW BULL J CRITCHLOW GW
Citation: Dj. Houlton et al., THE DEPOSITION OF PLATINUM-CONTAINING TIN OXIDE THIN-FILMS BY METAL-ORGANIC CVD, Advanced materials, 7(7), 1995, pp. 26-28
INVESTIGATIONS INTO THE GROWTH OF ALN BY MOCVD USING TRIMETHYLSILYLAZIDE AS NITROGEN-SOURCE
Authors: AULD J HOULTON DJ JONES AC RUSHWORTH SA CRITCHLOW GW
Citation: J. Auld et al., INVESTIGATIONS INTO THE GROWTH OF ALN BY MOCVD USING TRIMETHYLSILYLAZIDE AS NITROGEN-SOURCE, Journal of materials chemistry, 4(8), 1994, pp. 1245-1247
GROWTH OF ZNO BY MOCVD USING ALKYLZINC ALKOXIDES AS SINGLE-SOURCE PRECURSORS
Authors: AULD J HOULTON DJ JONES AC RUSHWORTH SA MALIK MA OBRIEN P CRITCHLOW GW
Citation: J. Auld et al., GROWTH OF ZNO BY MOCVD USING ALKYLZINC ALKOXIDES AS SINGLE-SOURCE PRECURSORS, Journal of materials chemistry, 4(8), 1994, pp. 1249-1253
INVESTIGATIONS INTO THE GROWTH OF ALN BY MOCVD USING TERI-TERT-BUTYLALUMINIUM AS AN ALTERNATIVE ALUMINUM SOURCE
Authors: JONES AC AULD J RUSHWORTH SA HOULTON DJ CRITCHLOW GW
Citation: Ac. Jones et al., INVESTIGATIONS INTO THE GROWTH OF ALN BY MOCVD USING TERI-TERT-BUTYLALUMINIUM AS AN ALTERNATIVE ALUMINUM SOURCE, Journal of materials chemistry, 4(10), 1994, pp. 1591-1594
MODELS OF SURFACE-CONFINED METALLOCENE DERIVATIVES
Authors: BUYS IE HAMBLEY TW HOULTON DJ MASCHMEYER T MASTERS AF SMITH AK
Citation: Ie. Buys et al., MODELS OF SURFACE-CONFINED METALLOCENE DERIVATIVES, Journal of molecular catalysis, 86(1-3), 1994, pp. 309-318
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