Authors: KIZILYALLI IC HUANG RYS ROY PK

Citation: Ic. Kizilyalli et al., MOS-TRANSISTORS WITH STACKED SIO2-TA2O5-SIO2 GATE DIELECTRICS FOR GIGA-SCALE INTEGRATION OF CMOS TECHNOLOGIES, IEEE electron device letters, 19(11), 1998, pp. 423-425

Authors: HUANG RYS DUTTON RW

Citation: Rys. Huang et Rw. Dutton, COMMENT ON EXPERIMENTAL INVESTIGATION AND MODELING OF THE ROLE OF EXTENDED DEFECTS DURING THERMAL-OXIDATION, Journal of applied physics, 76(10), 1994, pp. 6020-6021

Authors: HUANG RYS DUTTON RW

Citation: Rys. Huang et Rw. Dutton, EXPERIMENTAL INVESTIGATION AND MODELING OF THE ROLE OF EXTENDED DEFECTS DURING THERMAL-OXIDATION, Journal of applied physics, 74(9), 1993, pp. 5821-5827

Authors: ROTH DJ HUANG RYS PLUMMER JD DUTTON RW

Citation: Dj. Roth et al., SILICON INTERSTITIAL ABSORPTION DURING THERMAL-OXIDATION AT 900 DEGREES-C BY EXTENDED DEFECTS FORMED VIA SILICON IMPLANTATION, Applied physics letters, 62(20), 1993, pp. 2498-2500