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Results:
1-17
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Results: 17
Authors:
Hangleiter, A
Heppel, S
Off, J
Kuhn, B
Scholz, F
Bader, S
Hahn, B
Harle, V
Citation: A. Hangleiter et al., Analysis of the threshold current in nitride-based lasers, J CRYST GR, 230(3-4), 2001, pp. 522-526
Authors:
Porsche, J
Ost, M
Scholz, F
Fantini, A
Phillipp, F
Riedl, T
Hangleiter, A
Citation: J. Porsche et al., Growth of self-assembled InP quantum islands for red-light-emitting injection lasers, IEEE S T QU, 6(3), 2000, pp. 482-490
Authors:
Porsche, J
Ost, M
Riedl, T
Hangleiter, A
Scholz, F
Citation: J. Porsche et al., Lasing from excited states in self-assembled InP/GaInP quantum islands, MAT SCI E B, 74(1-3), 2000, pp. 263-268
Authors:
Bader, S
Hahn, B
Lugauer, HJ
Lell, A
Weimar, A
Bruderl, G
Baur, J
Eisert, D
Scheubeck, M
Heppel, S
Hangleiter, A
Harle, V
Citation: S. Bader et al., First European GaN-based violet laser diode, PHYS ST S-A, 180(1), 2000, pp. 177-182
Authors:
Hangleiter, A
Citation: A. Hangleiter, Optical properties and polarization fields in the nitrides, J LUMINESC, 87-9, 2000, pp. 130-134
Authors:
Riedl, T
Fehrenbacher, E
Zundel, MK
Eberl, K
Hangleiter, A
Citation: T. Riedl et al., Red light emitting injection lasers with vertically-aligned InP/GaInP quantum dots, JPN J A P 1, 38(1B), 1999, pp. 597-600
Authors:
Im, JS
Kollmer, H
Off, J
Scholz, F
Hangleiter, A
Citation: Js. Im et al., Carrier confinement in GaInNi/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field, MAT SCI E B, 59(1-3), 1999, pp. 315-318
Authors:
Hangleiter, A
Duboz, JY
Kishino, K
Ponce, F
Citation: A. Hangleiter et al., European Materials Research Society 1998 Spring Meeting, Symposium L: Nitrides and related wide band gap materials, June 16-19, 1998, Strasbourg, France - Preface, MAT SCI E B, 59(1-3), 1999, pp. XI-XI
Authors:
Gfrorer, O
Gemmer, C
Off, J
Im, JS
Scholz, F
Hangleiter, A
Citation: O. Gfrorer et al., Direct observation of pyroelectric fields in InGaN/GaN and AlGaN/GaN heterostructures, PHYS ST S-B, 216(1), 1999, pp. 405-408
Authors:
Hangleiter, A
Im, JS
Off, J
Scholz, F
Citation: A. Hangleiter et al., Optical properties of nitride quantum wells: How to separate fluctuations and polarization field effects, PHYS ST S-B, 216(1), 1999, pp. 427-430
Authors:
Off, J
Scholz, F
Fehrenbacher, E
Gfrorer, O
Hangleiter, A
Brockt, G
Lakner, H
Citation: J. Off et al., Investigations on the V-defect formation in GaInN-GaN multi quantum well structures, PHYS ST S-B, 216(1), 1999, pp. 529-532
Authors:
Wirth, R
Porsche, J
Scholz, F
Hangleiter, A
Citation: R. Wirth et al., Birefringence in ordered Ga0.47In0.53As/InP, PHYS REV B, 59(3), 1999, pp. 1582-1585
Authors:
Heppel, S
Wirth, R
Off, J
Scholz, F
Hangleiter, A
Obloh, H
Wagner, J
Kirchner, C
Kamp, M
Citation: S. Heppel et al., Mode conversion in GaN based laser structures on sapphire due to the birefringence of the nitrides, PHYS ST S-A, 176(1), 1999, pp. 73-77
Authors:
Zundel, MK
Eberl, K
Jin-Phillipp, NY
Phillipp, F
Riedl, T
Fehrenbacher, E
Hangleiter, A
Citation: Mk. Zundel et al., Self-assembled InP quantum dots for red LEDs on Si and injection lasers onGaAs, J CRYST GR, 202, 1999, pp. 1121-1125
Authors:
Raisch, P
Winterhoff, R
Wagner, W
Kessler, M
Schweizer, H
Riedl, T
Wirth, R
Hangleiter, A
Scholz, F
Citation: P. Raisch et al., Investigations on the performance of multiquantum barriers in short wavelength (630 nm) AlGaInP laser diodes, APPL PHYS L, 74(15), 1999, pp. 2158-2160
Authors:
Kollmer, H
Im, JS
Heppel, S
Off, J
Scholz, F
Hangleiter, A
Citation: H. Kollmer et al., Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields, APPL PHYS L, 74(1), 1999, pp. 82-84
Authors:
Riedl, T
Fehrenbacher, E
Hangleiter, A
Zundel, MK
Eberl, K
Citation: T. Riedl et al., Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size, APPL PHYS L, 73(25), 1998, pp. 3730-3732
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