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Results: 1-22 |
Results: 22
1.54 mu m Light emitting devices based on Er/O-doped Si layered structuresgrown by molecular beam epitaxy
Authors: Ni, WX Du, CX Duteil, F Elfving, A Hansson, GV
Citation: Wx. Ni et al., 1.54 mu m Light emitting devices based on Er/O-doped Si layered structuresgrown by molecular beam epitaxy, OPT MATER, 17(1-2), 2001, pp. 65-69
Er/O doped Si1-xGex alloy layers grown by MBE
Authors: Duteil, F Du, CX Jarrendahl, K Ni, WX Hansson, GV
Citation: F. Duteil et al., Er/O doped Si1-xGex alloy layers grown by MBE, OPT MATER, 17(1-2), 2001, pp. 131-134
Efficient 1.54 mu m light emission from Si/SiGe/Si : Er : O transistors prepared by differential MBE
Authors: Du, CX Duteil, F Hansson, GV Ni, WX
Citation: Cx. Du et al., Efficient 1.54 mu m light emission from Si/SiGe/Si : Er : O transistors prepared by differential MBE, MAT SCI E B, 81(1-3), 2001, pp. 105-108
Interaction of metastable molecular oxygen with the dangling bonds of a Si(111)-(7X7) surface
Authors: Sakamoto, K Hirano, M Takeda, H Jemander, ST Matsuda, I Amemiya, K Ohta, T Uchida, W Hansson, GV Uhrberg, RIG
Citation: K. Sakamoto et al., Interaction of metastable molecular oxygen with the dangling bonds of a Si(111)-(7X7) surface, J ELEC SPEC, 114, 2001, pp. 489-494
Formation of Ni-graphite intercalation compounds on SiC - art. no. 155401
Authors: Robbie, K Jemander, ST Lin, N Hallin, C Erlandsson, R Hansson, GV Madsen, LD
Citation: K. Robbie et al., Formation of Ni-graphite intercalation compounds on SiC - art. no. 155401, PHYS REV B, 6415(15), 2001, pp. 5401
Electronic structure of ultrathin Ge layers buried in Si(100) - art. no. 115306
Authors: Nilsson, PO Mankefors, S Guo, J Nordgren, J Debowska-Nilsson, D Ni, WX Hansson, GV
Citation: Po. Nilsson et al., Electronic structure of ultrathin Ge layers buried in Si(100) - art. no. 115306, PHYS REV B, 6411(11), 2001, pp. 5306
An STM study of the surface defects of the (root 3 x root 3)-Sn/Si(111) surface
Authors: Jemander, ST Lin, N Zhang, HM Uhrberg, RIG Hansson, GV
Citation: St. Jemander et al., An STM study of the surface defects of the (root 3 x root 3)-Sn/Si(111) surface, SURF SCI, 475(1-3), 2001, pp. 181-193
Resonant scattering in delta-doped heterostructures
Authors: Robinson, IK Nilsson, PO Debowska-Nilsson, D Ni, WX Hansson, GV
Citation: Ik. Robinson et al., Resonant scattering in delta-doped heterostructures, APPL PHYS L, 79(18), 2001, pp. 2913-2915
Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes
Authors: Hansson, GV Ni, WX Du, CX Elfving, A Duteil, F
Citation: Gv. Hansson et al., Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes, APPL PHYS L, 78(15), 2001, pp. 2104-2106
Si/SiGe/Si : Er : O light-emitting transistors prepared by differential molecular-beam epitaxy
Authors: Du, CX Duteil, F Hansson, GV Ni, WX
Citation: Cx. Du et al., Si/SiGe/Si : Er : O light-emitting transistors prepared by differential molecular-beam epitaxy, APPL PHYS L, 78(12), 2001, pp. 1697-1699
Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
Authors: Duteil, F Du, CX Joelsson, KB Persson, POA Hultman, L Pozina, G Ni, WX Hansson, GV
Citation: F. Duteil et al., Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation, MAT SC S PR, 3(5-6), 2000, pp. 523-528
Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy
Authors: Du, CX Ni, WX Joelsson, KB Duteil, F Hansson, GV
Citation: Cx. Du et al., Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy, OPT MATER, 14(3), 2000, pp. 259-265
Electronic structure of Sn/Si(111) root 3X root 3: Indications of a low-temperature phase
Authors: Uhrberg, RIG Zhang, HM Balasubramanian, T Jemander, ST Lin, N Hansson, GV
Citation: Rig. Uhrberg et al., Electronic structure of Sn/Si(111) root 3X root 3: Indications of a low-temperature phase, PHYS REV B, 62(12), 2000, pp. 8082-8086
Light emitting SiGe/i-Si/Si : Er : O tunneling diodes prepared by molecular beam epitaxy
Authors: Ni, WX Du, CX Duteil, F Pozina, G Hansson, GV
Citation: Wx. Ni et al., Light emitting SiGe/i-Si/Si : Er : O tunneling diodes prepared by molecular beam epitaxy, THIN SOL FI, 369(1-2), 2000, pp. 414-418
Device aspects of Er-doped Si structures for optoelectric interconnect applications
Authors: Ni, WX Du, CX Joelsson, KB Pozina, G Duteil, F Hansson, GV
Citation: Wx. Ni et al., Device aspects of Er-doped Si structures for optoelectric interconnect applications, PHYS SCR, T79, 1999, pp. 143-148
Studies of Er/F doped p-i-n Si light emitting diodes prepared by molecularbeam epitaxy
Authors: Du, CX Ni, WX Pozina, G Joelsson, KB Hansson, GV
Citation: Cx. Du et al., Studies of Er/F doped p-i-n Si light emitting diodes prepared by molecularbeam epitaxy, PHYS SCR, T79, 1999, pp. 155-158
Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres
Authors: Kuznetsov, AY Radamson, HH Svensson, BG Ni, WX Hansson, GV Larsen, AN
Citation: Ay. Kuznetsov et al., Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres, PHYS SCR, T79, 1999, pp. 202-205
Er doping of Si and Si0.88Ge0.12 using Er2O3 and ErF3 evaporation during molecular beam epitaxy - A transmission electron microscopy study
Authors: Joelsson, KB Hultman, L Ni, WX Cardenas, J Svensson, BG Olsson, E Hansson, GV
Citation: Kb. Joelsson et al., Er doping of Si and Si0.88Ge0.12 using Er2O3 and ErF3 evaporation during molecular beam epitaxy - A transmission electron microscopy study, J CRYST GR, 196(1), 1999, pp. 97-110
1.54 mu m Light emission from Er/O and Er/F doped Si p-i-n diodes grown bymolecular beam epitaxy
Authors: Ni, WX Du, CX Joelsson, KB Pozina, G Hansson, GV
Citation: Wx. Ni et al., 1.54 mu m Light emission from Er/O and Er/F doped Si p-i-n diodes grown bymolecular beam epitaxy, J LUMINESC, 80(1-4), 1998, pp. 309-314
Er-doped edge emitting devices with a SiGe waveguide
Authors: Du, CX Ni, WX Joelsson, KB Duteil, F Hansson, GV
Citation: Cx. Du et al., Er-doped edge emitting devices with a SiGe waveguide, J LUMINESC, 80(1-4), 1998, pp. 329-333
Luminescence from Si-Si1-xGex/Si1-yCy-Si structures
Authors: Joelsson, KB Pozina, G Ni, WX Du, CX Hansson, GV
Citation: Kb. Joelsson et al., Luminescence from Si-Si1-xGex/Si1-yCy-Si structures, J LUMINESC, 80(1-4), 1998, pp. 497-501
Photoluminescence and X-ray characterisation of Si/Si1-xGex multiple quantum wells
Authors: Sidiki, TP Ruhm, A Ni, WX Hansson, GV Torres, CMS
Citation: Tp. Sidiki et al., Photoluminescence and X-ray characterisation of Si/Si1-xGex multiple quantum wells, J LUMINESC, 80(1-4), 1998, pp. 503-507
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