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Results: 1-13 |
Results: 13
Anisotropic etching of {100} and {110} planes in (100) silicon
Authors: Powell, O Harrison, HB
Citation: O. Powell et Hb. Harrison, Anisotropic etching of {100} and {110} planes in (100) silicon, J MICROM M, 11(3), 2001, pp. 217-220
Novel SiC accumulation-mode power MOSFET
Authors: Linewih, H Dimitrijev, S Weitzel, CE Harrison, HB
Citation: H. Linewih et al., Novel SiC accumulation-mode power MOSFET, IEEE DEVICE, 48(8), 2001, pp. 1711-1717
Controlling a DC-DC converter by using the power MOSFET as a voltage controlled resistor
Authors: Smith, TA Dimitrijev, S Harrison, HB
Citation: Ta. Smith et al., Controlling a DC-DC converter by using the power MOSFET as a voltage controlled resistor, IEEE CIRC-I, 47(3), 2000, pp. 357-362
Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors
Authors: Li, HF Dimitrijev, S Sweatman, D Harrison, HB
Citation: Hf. Li et al., Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors, J ELEC MAT, 29(8), 2000, pp. 1027-1032
Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC
Authors: Li, HF Dimitrijev, S Sweatman, D Harrison, HB
Citation: Hf. Li et al., Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC, MICROEL REL, 40(2), 2000, pp. 283-286
Introduction to the MICRO/MEMS 99 special issue
Authors: Harrison, HB
Citation: Hb. Harrison, Introduction to the MICRO/MEMS 99 special issue, MICROELEC J, 31(7), 2000, pp. 491-491
Self-alignment of optical fibers with optical quality end-polished siliconrib waveguides using wet chemical micromachining techniques
Authors: Rosa, MA Ngo, NQ Sweatman, D Dimitrijev, S Harrison, HB
Citation: Ma. Rosa et al., Self-alignment of optical fibers with optical quality end-polished siliconrib waveguides using wet chemical micromachining techniques, IEEE S T QU, 5(5), 1999, pp. 1249-1254
SIMS analysis of nitrided oxides grown on 4H-SiC
Authors: Tanner, P Dimitrijev, S Li, HF Sweatman, D Prince, KE Harrison, HB
Citation: P. Tanner et al., SIMS analysis of nitrided oxides grown on 4H-SiC, J ELEC MAT, 28(2), 1999, pp. 109-111
Slow-trap profiling of NO and N2O nitrided oxides grown on Si and SiC substrates
Authors: Dimitrijev, S Tanner, P Harrison, HB
Citation: S. Dimitrijev et al., Slow-trap profiling of NO and N2O nitrided oxides grown on Si and SiC substrates, MICROEL REL, 39(4), 1999, pp. 441-449
Avoidance of stiction in the release of highly boron doped micro-actuatorsfabricated using BESOI substrates
Authors: Rosa, MA Dimitrijev, S Harrison, HB
Citation: Ma. Rosa et al., Avoidance of stiction in the release of highly boron doped micro-actuatorsfabricated using BESOI substrates, MICROEL REL, 39(1), 1999, pp. 139-142
Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-rayphotoelectron spectroscopy
Authors: Li, HF Dimitrijev, S Sweatman, D Harrison, HB Tanner, P Feil, B
Citation: Hf. Li et al., Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-rayphotoelectron spectroscopy, J APPL PHYS, 86(8), 1999, pp. 4316-4321
Improved operation of micromechanical comb-drive actuators through the useof a new angled comb finger design
Authors: Rosa, MA Dimitrijev, S Harrison, HB
Citation: Ma. Rosa et al., Improved operation of micromechanical comb-drive actuators through the useof a new angled comb finger design, J IN MAT SY, 9(4), 1998, pp. 283-290
The effects of process induced gate-to-source/drain junction separation inMOSFET structures
Authors: Rowlands, D Dimitrijev, S Harrison, HB
Citation: D. Rowlands et al., The effects of process induced gate-to-source/drain junction separation inMOSFET structures, MICROEL REL, 38(12), 1998, pp. 1855-1866
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