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Results:
1-12
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Results: 12
Authors:
Dawber, M
Scott, JF
Hartmann, AJ
Citation: M. Dawber et al., Effect of donor and acceptor dopants on Schottky barrier heights and vacancy concentrations in barium strontium titanate, J EUR CERAM, 21(10-11), 2001, pp. 1633-1636
Authors:
Watanabe, K
Hartmann, AJ
Lamb, RN
Craig, RP
Thurgate, SM
Scott, JF
Citation: K. Watanabe et al., Valence band and bandgap states of ferroelectric SrBi2Ta2O9 thin films, JPN J A P 2, 39(4A), 2000, pp. L309-L311
Authors:
Tran, NH
Hartmann, AJ
Lamb, RN
Citation: Nh. Tran et al., Epitaxial ZnS thin films grown by single source chemical vapor deposition, J PHYS CH B, 104(6), 2000, pp. 1150-1152
Authors:
Watanabe, K
Hartmann, AJ
Scott, JF
Citation: K. Watanabe et al., A novel fabrication method for stoichiometric strontium bismuth tantalate thin films for memory devices, APPL PHYS A, 70(3), 2000, pp. 243-246
Authors:
Hartmann, AJ
Neilson, M
Lamb, RN
Watanabe, K
Scott, JF
Citation: Aj. Hartmann et al., Ruthenium oxide and strontium ruthenate electrodes for ferroelectric thin-films capacitors, APPL PHYS A, 70(2), 2000, pp. 239-242
Authors:
Hartmann, AJ
Lamb, RN
Citation: Aj. Hartmann et Rn. Lamb, Chemical and structural characterization of thin films using electrons andphotons, SURF INT AN, 29(1), 2000, pp. 3-11
Authors:
Nast, O
Hartmann, AJ
Citation: O. Nast et Aj. Hartmann, Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon, J APPL PHYS, 88(2), 2000, pp. 716-724
Authors:
Tran, NH
Hartmann, AJ
Lamb, RN
Citation: Nh. Tran et al., Structural order of nanocrystalline ZnO films, J PHYS CH B, 103(21), 1999, pp. 4264-4268
Authors:
Hartmann, AJ
Lamb, RN
Scott, JF
Johnston, PN
El Bouanani, M
Chen, CW
Robertson, J
Citation: Aj. Hartmann et al., Surface characterisation of strontium-bismuth tantalate (SBT) thin films, INTEGR FERR, 23(1-4), 1999, pp. 113-126
Authors:
Scott, JF
Watanabe, K
Hartmann, AJ
Lamb, RN
Citation: Jf. Scott et al., Device models for PZT/Pt, BST/Pt, SBT/Pt, and SBT/Bi ferroelectric memories, FERROELECTR, 225(1-4), 1999, pp. 889-896
Authors:
Scott, JF
Hartmann, AJ
Citation: Jf. Scott et Aj. Hartmann, Effects of constrained geometries and fast access times in real ferroelectric memory devices, J PHYS IV, 8(P9), 1998, pp. 3-15
Authors:
Hartmann, AJ
Koch, MH
Lamb, RN
Citation: Aj. Hartmann et al., Single-source chemical vapour deposition growth of thin-film ceramics: Case study Cu-doped ZnO, CERAMIC INTERFACES, 1998, pp. 99-107
Risultati:
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