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Results: 26-47/47
Authors:
Sarua, A
Irmer, G
Monecke, J
Tiginyanu, IM
Schwab, C
Grob, JJ
Hartnagel, HL
Citation: A. Sarua et al., Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing, J APPL PHYS, 88(12), 2000, pp. 7006-7012
Authors:
Pantoja, JMM
Lin, CI
Shaalan, M
Sebastian, JL
Hartnagel, HL
Citation: Jmm. Pantoja et al., Monte Carlo simulation of microwave noise temperature in cooled GaAs and InP, IEEE MICR T, 48(7), 2000, pp. 1275-1279
Authors:
Lai, K
Hartnagel, HL
Goswami, N
Thoma, P
Citation: K. Lai et al., Experimental evaluation of on-chip measurement of charge transfer by X-rays, ELECTR LETT, 36(14), 2000, pp. 1204-1205
Authors:
Tiginyanu, IM
Kravetsky, IV
Monecke, J
Cordts, W
Marowsky, G
Hartnagel, HL
Citation: Im. Tiginyanu et al., Semiconductor sieves as nonlinear optical materials, APPL PHYS L, 77(15), 2000, pp. 2415-2417
Authors:
Kravetsky, IV
Tiginyanu, IM
Hildebrandt, R
Marowsky, G
Pavlidis, D
Eisenbach, A
Hartnagel, HL
Citation: Iv. Kravetsky et al., Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference, APPL PHYS L, 76(7), 2000, pp. 810-812
Authors:
Kravetsky, IV
Tiginyanu, IM
Hildebrandt, R
Marowsky, G
Pavlidis, D
Eisenbach, A
Hartnagel, HL
Citation: Iv. Kravetsky et al., Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference (vol 76, pg 810, 2000), APPL PHYS L, 76(11), 2000, pp. 1479-1479
Authors:
Arslan, D
Dehe, A
Hartnagel, HL
Citation: D. Arslan et al., New concept of lateral GaAs field emitter for sensor applications, J VAC SCI B, 17(2), 1999, pp. 784-787
Authors:
Peerlings, J
Riemenschneider, R
Kumar, VN
Strassner, M
Pfeiffer, J
Scheuer, V
Daleiden, J
Mutamba, K
Herbst, S
Hartnagel, HL
Meissner, P
Citation: J. Peerlings et al., Two-chip InGaAs-InP Fabry-Perot p-i-n receiver for WDM systems, IEEE PHOTON, 11(2), 1999, pp. 260-262
Authors:
Berberich, S
Godignon, P
Millan, J
Planson, D
Hartnagel, HL
Senes, A
Citation: S. Berberich et al., Electrical characterisation of MNOS devices on p-type 6H-SiC, DIAM RELAT, 8(2-5), 1999, pp. 305-308
Authors:
Vogt, A
Simon, A
Weber, J
Hartnagel, HL
Schikora, J
Buschmann, V
Fuess, H
Citation: A. Vogt et al., Non-annealed ohmic contacts to p-GaSb grown by molecular beam epitaxy, MAT SCI E B, 66(1-3), 1999, pp. 199-202
Authors:
Tiginyanu, IM
Ursaki, VV
Raptis, YS
Stergiou, V
Anastassakis, E
Hartnagel, HL
Vogt, A
Prevot, B
Schwab, C
Citation: Im. Tiginyanu et al., Raman modes in porous GaP under hydrostatic pressure, PHYS ST S-B, 211(1), 1999, pp. 281-286
Authors:
Wischmeyer, F
Niemann, E
Hartnagel, HL
Citation: F. Wischmeyer et al., Improvements of the SiC homoepitaxy process in a horizontal cold-wall CVD reactor, J ELEC MAT, 28(3), 1999, pp. 175-179
Authors:
Miranda, JM
Lin, C
Shaalan, M
Hartnagel, HL
Sebastian, JL
Citation: Jm. Miranda et al., Influence of the minimization of self-scattering events on the Monte Carlosimulation of carrier transport in III-V semiconductors, SEMIC SCI T, 14(9), 1999, pp. 804-808
Authors:
Ichizli, VM
Vogt, A
Sigurdardottir, A
Tiginyanu, IM
Hartnagel, HL
Citation: Vm. Ichizli et al., Tunnelling spectroscopy of AlAs and InSb interfaces in InAs/AlSb heterostructures, SEMIC SCI T, 14(2), 1999, pp. 143-147
Authors:
Hillenbrand, J
Angert, N
Hartnagel, HL
Neumann, R
Citation: J. Hillenbrand et al., Depolarization radii of latent heavy-ion tracks in poly(vinylidene fluoride), NUCL INST B, 151(1-4), 1999, pp. 123-128
Authors:
Sarua, A
Tiginyanu, IM
Ursaki, VV
Irmer, G
Monecke, J
Hartnagel, HL
Citation: A. Sarua et al., Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy, SOL ST COMM, 112(10), 1999, pp. 581-585
Authors:
Facsko, S
Dekorsy, T
Koerdt, C
Trappe, C
Kurz, H
Vogt, A
Hartnagel, HL
Citation: S. Facsko et al., Formation of ordered nanoscale semiconductor dots by ion sputtering, SCIENCE, 285(5433), 1999, pp. 1551-1553
Authors:
Tiginyanu, IM
Kravetsky, IV
Marowsky, G
Hartnagel, HL
Citation: Im. Tiginyanu et al., Efficient optical second harmonic generation in porous membranes of GaP, PHYS ST S-A, 175(2), 1999, pp. R5-R6
Authors:
Lal, K
Goswami, SNN
Miao, J
Hartnagel, HL
Citation: K. Lal et al., Structural characterization of free-standing gallium arsenide coiled membranes produced by micromachining, J APPL CRYS, 32, 1999, pp. 60-64
Authors:
Mutamba, K
Flath, M
Sigurdardottir, A
Vogt, A
Hartnagel, HL
Citation: K. Mutamba et al., A GaAs pressure sensor with frequency output based on resonant tunneling diodes, IEEE INSTR, 48(6), 1999, pp. 1333-1338
Authors:
Hartnagel, HL
Citation: Hl. Hartnagel, Proposal of a new type of non-linear component for harmonic extraction, FREQUENZ, 53(5-6), 1999, pp. 95-96
Authors:
Matulionis, A
Aninkevicius, V
Liberis, J
Matulioniene, I
Berntgen, J
Heime, K
Hartnagel, HL
Citation: A. Matulionis et al., Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels, APPL PHYS L, 74(13), 1999, pp. 1895-1897