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Results: 1-25/34
Authors:
Takakura, K
Suemasu, T
Hasegawa, F
Citation: K. Takakura et al., Donor and acceptor levels in undoped beta-FeSi2 films grown on Si (001) substrates, JPN J A P 2, 40(3B), 2001, pp. L249-L251
Authors:
Hiroi, N
Suemasu, T
Takakura, K
Seki, N
Hasegawa, F
Citation: N. Hiroi et al., Direct growth of [100]-oriented high-quality beta-FeSi2 films on Si(001) substrates by molecular beam epitaxy, JPN J A P 2, 40(10A), 2001, pp. L1008-L1011
Authors:
Masutani, M
Nozaki, T
Watanabe, M
Ochiya, T
Hasegawa, F
Nakagawa, H
Suzuki, H
Sugimura, T
Citation: M. Masutani et al., Involvement of poly(ADP-ribose) polymerase in trophoblastic cell differentiation during tumorigenesis, MUT RES-F M, 477(1-2), 2001, pp. 111-117
Authors:
Tokuzen, R
Iwahori, Y
Asamoto, M
Iigo, M
Hasegawa, F
Satoh, T
Ishidate, M
Tsuda, H
Citation: R. Tokuzen et al., Establishment and characterization of three new rat renal cell carcinoma cell lines from N-ethyl-N-hydroxyethylnitrosamine-induced basophilic cell tumors, PATHOL INT, 51(2), 2001, pp. 65-71
Authors:
Luo, J
Pattipati, KR
Willett, PK
Hasegawa, F
Citation: J. Luo et al., Near-optimal multiuser detection in synchronous CDMA using probabilistic data association, IEEE COMM L, 5(9), 2001, pp. 361-363
Authors:
Takarabe, K
Teranisi, R
Oinuma, J
Mori, Y
Suemasu, T
Chichibu, S
Hasegawa, F
Citation: K. Takarabe et al., Optical absorption spectra of beta-FeSi2 under pressure, PHYS ST S-B, 223(1), 2001, pp. 259-263
Authors:
Suemasu, T
Fujii, T
Takakura, K
Hasegawa, F
Citation: T. Suemasu et al., Dependence of photoluminescence from beta-FeSi2 and induced deep levels inSi on the size of beta-FeSi2 balls embedded in Si crystals, THIN SOL FI, 381(2), 2001, pp. 209-213
Authors:
Koizumi, S
Watanabe, K
Hasegawa, F
Kanda, H
Citation: S. Koizumi et al., Ultraviolet emission from a diamond pn junction, SCIENCE, 292(5523), 2001, pp. 1899-1901
Authors:
Kuroda, M
Mimaki, Y
Hasegawa, F
Yokosuka, A
Sashida, Y
Sakagami, H
Citation: M. Kuroda et al., Steroidal glycosides from the bulbs of Camassia leichtlinii and their cytotoxic activities, CHEM PHARM, 49(6), 2001, pp. 726-731
Authors:
Naishiro, Y
Yamada, T
Takaoka, AS
Hayashi, R
Hasegawa, F
Imai, K
Hirohashi, S
Citation: Y. Naishiro et al., Restoration of epithelial cell polarity in a colorectal cancer cell line by suppression of beta-catenin/T-cell factor 4-mediated gene transactivation, CANCER RES, 61(6), 2001, pp. 2751-2758
Authors:
Suemasu, T
Negishi, Y
Takakura, K
Hasegawa, F
Chikyow, T
Citation: T. Suemasu et al., Influence of Si growth temperature for embedding beta+FeSi2 and resultant strain in beta+FeSi2 on light emission from p-Si/beta-FeSi2 particles/n-Si light-emitting diodes, APPL PHYS L, 79(12), 2001, pp. 1804-1806
Authors:
Sasaki, M
Nakayama, T
Shimoyama, N
Suemasu, T
Hasegawa, F
Citation: M. Sasaki et al., Superiority of an AlN intermediate layer for heteroepitaxy of hexagonal GaN, JPN J A P 1, 39(8), 2000, pp. 4869-4874
Authors:
Sato, T
Kasai, S
Okada, H
Hasegawa, F
Citation: T. Sato et al., Electrical properties of nanometer-sized Schottky contacts on n-GaAs and n-InP formed by in situ electrochemical process, JPN J A P 1, 39(7B), 2000, pp. 4609-4615
Authors:
Takakura, K
Suemasu, T
Ikura, Y
Hasegawa, F
Citation: K. Takakura et al., Control of the conduction type of nondoped high mobility beta-FeSi2 films grown from Si/Fe multilayers by change of Si/Fe ratios, JPN J A P 2, 39(8A), 2000, pp. L789-L791
Authors:
Takakura, K
Suemasu, T
Hiroi, N
Hasegawa, F
Citation: K. Takakura et al., Improvement of the electrical properties of beta-FeSi2 films on Si (001) by high-temperature annealing, JPN J A P 2, 39(3AB), 2000, pp. L233-L236
Authors:
Suemasu, T
Negishi, Y
Takakura, K
Hasegawa, F
Citation: T. Suemasu et al., Room temperature 1.6 mu m electroluminescence from a Si-based light emitting diode with beta-FeSi2 active region, JPN J A P 2, 39(10B), 2000, pp. L1013-L1015
Authors:
Hasegawa, F
Minami, M
Suemasu, T
Citation: F. Hasegawa et al., One possibility of obtaining bulk GaN: Halide VPE growth at 1000 degrees Con GaAs (111) substrates, IEICE TR EL, E83C(4), 2000, pp. 633-638
Authors:
Tomaru, U
Hasegawa, T
Hasegawa, F
Kito, M
Hirose, T
Shimoda, T
Citation: U. Tomaru et al., Primary extracranial meningioma of the foot: A case report, JPN J CLIN, 30(7), 2000, pp. 313-317
Authors:
Tsuda, H
Takarabe, T
Hasegawa, F
Fukutomi, T
Hirohashi, S
Citation: H. Tsuda et al., Large, central acellular zones indicating myoepithelial tumor differentiation in high-grade invasive ductal carcinomas as markers of predisposition to lung and brain metastases, AM J SURG P, 24(2), 2000, pp. 197-202
Authors:
Hasegawa, T
Seki, K
Hasegawa, F
Matsuno, Y
Shimoda, T
Hirose, T
Sano, T
Hirohashi, S
Citation: T. Hasegawa et al., Dedifferentiated liposarcoma of retroperitoneum and mesentery: Varied growth patterns and histological grades - A clinicopathologic study of 32 cases, HUMAN PATH, 31(6), 2000, pp. 717-727
Authors:
Takakura, K
Suemasu, T
Hasegawa, F
Citation: K. Takakura et al., Growth of Mn doped epitaxial beta-FeSi2 films on Si(001) substrates by reactive deposition epitaxy, THIN SOL FI, 369(1-2), 2000, pp. 253-256
Authors:
Suemasu, T
Iikura, Y
Takakura, K
Hasegawa, F
Citation: T. Suemasu et al., Optimum annealing condition for 1.5 mu m photoluminescence from beta-FeSi2balls grown by reactive deposition epitaxy and embedded in Si crystal, J LUMINESC, 87-9, 2000, pp. 528-531
Authors:
Suemasu, T
Sakai, M
Hasegawa, F
Citation: T. Suemasu et al., Optimum thermal-cleaning condition of GaAs surface with a superior arsenicsource: trisdimethylamino-arsine, J CRYST GR, 209(2-3), 2000, pp. 267-271
Authors:
Sasaki, M
Yonemura, S
Nakayama, T
Shimoyama, N
Suemasu, T
Hasegawa, F
Citation: M. Sasaki et al., CBE growth of GaN on GaAs(001) and (111)B substrates using monomethylhydrazine, J CRYST GR, 209(2-3), 2000, pp. 373-377
Authors:
Suemasu, T
Hiroi, N
Fujii, T
Takakura, K
Hasegawa, F
Citation: T. Suemasu et al., Growth of continous and highly (100)-oriented beta-FeSi2 films on Si(001) from Si/Fe multilayers with SiO2 capping and templates, JPN J A P 2, 38(8A), 1999, pp. L878-L881