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Results: 1-22 |
Results: 22
Nanolithography using ultrasonically assisted development of calixarene negative electron beam resist
Authors: Yasin, S Hasko, DG Carecenac, F
Citation: S. Yasin et al., Nanolithography using ultrasonically assisted development of calixarene negative electron beam resist, J VAC SCI B, 19(1), 2001, pp. 311-313
Domain-wall trapping in controlled mesoscopic ferromagnetic wire junctions
Authors: Hirohata, A Xu, YB Yao, CC Leung, HT Lee, WY Gardiner, SM Hasko, DG Bland, JAC Holmes, SN
Citation: A. Hirohata et al., Domain-wall trapping in controlled mesoscopic ferromagnetic wire junctions, J MAGN MAGN, 226, 2001, pp. 1845-1847
Fabrication of a self-aligned superconducting nanotransistor based NOR logic gate
Authors: Lee, SB Hasko, DG Ahmed, H
Citation: Sb. Lee et al., Fabrication of a self-aligned superconducting nanotransistor based NOR logic gate, MICROEL ENG, 57-8, 2001, pp. 981-987
Uniform patterned growth of carbon nanotubes without surface carbon
Authors: Teo, KBK Chhowalla, M Amaratunga, GAJ Milne, WI Hasko, DG Pirio, G Legagneux, P Wyczisk, F Pribat, D
Citation: Kbk. Teo et al., Uniform patterned growth of carbon nanotubes without surface carbon, APPL PHYS L, 79(10), 2001, pp. 1534-1536
Fabrication of < 5 nm width lines in poly(methylmethacrylate) resist usinga water : isopropyl alcohol developer and ultrasonically-assisted development
Authors: Yasin, S Hasko, DG Ahmed, H
Citation: S. Yasin et al., Fabrication of < 5 nm width lines in poly(methylmethacrylate) resist usinga water : isopropyl alcohol developer and ultrasonically-assisted development, APPL PHYS L, 78(18), 2001, pp. 2760-2762
Influence of developer and development conditions on the behavior of high molecular weight electron beam resists
Authors: Hasko, DG Yasin, S Mumtaz, A
Citation: Dg. Hasko et al., Influence of developer and development conditions on the behavior of high molecular weight electron beam resists, J VAC SCI B, 18(6), 2000, pp. 3441-3444
Quantum interference in a vacuum nanotriode
Authors: Driskill-Smith, AAG Hasko, DG Ahmed, H
Citation: Aag. Driskill-smith et al., Quantum interference in a vacuum nanotriode, J VAC SCI B, 18(6), 2000, pp. 3481-3487
Fabrication and characterization of vacuum nanoelectronic devices
Authors: Driskill-Smith, AAG Hasko, DG Ahmed, H
Citation: Aag. Driskill-smith et al., Fabrication and characterization of vacuum nanoelectronic devices, MICROEL ENG, 53(1-4), 2000, pp. 179-182
Coulomb blockade in a silicon-on-sapphire nanowire
Authors: Dovinos, D Hasko, DG Helin, Z
Citation: D. Dovinos et al., Coulomb blockade in a silicon-on-sapphire nanowire, MICROEL ENG, 53(1-4), 2000, pp. 199-202
Characterisation of the ultrasonic development process in UVIII resist
Authors: Yasin, S Mumtaz, A Hasko, DG Carecenac, F Ahmed, H
Citation: S. Yasin et al., Characterisation of the ultrasonic development process in UVIII resist, MICROEL ENG, 53(1-4), 2000, pp. 471-474
Domain wall trapping in controlled submicron ferromagnetic elements
Authors: Hirohata, A Xu, YB Yao, CC Leung, HT Lee, WY Gardiner, SM Hasko, DG Bland, JAC Holmes, SN
Citation: A. Hirohata et al., Domain wall trapping in controlled submicron ferromagnetic elements, J APPL PHYS, 87(9), 2000, pp. 4727-4729
Domain nucleation processes in mesoscopic Ni80Fe20 wire junctions
Authors: Lee, WY Yao, CC Hirohata, A Xu, YB Leung, HT Gardiner, SM McPhail, S Choi, BC Hasko, DG Bland, JAC
Citation: Wy. Lee et al., Domain nucleation processes in mesoscopic Ni80Fe20 wire junctions, J APPL PHYS, 87(6), 2000, pp. 3032-3036
Thermally switched superconducting weak-link transistor with current gain
Authors: Lee, SB Hasko, DG Ahmed, H
Citation: Sb. Lee et al., Thermally switched superconducting weak-link transistor with current gain, APPL PHYS L, 76(16), 2000, pp. 2295-2297
Characteristics of a free-standing superconducting nanobridge with an integrated heater fabricated using a self-aligned technique
Authors: Lee, SB Hasko, DG Ahmed, H
Citation: Sb. Lee et al., Characteristics of a free-standing superconducting nanobridge with an integrated heater fabricated using a self-aligned technique, J VAC SCI B, 17(6), 1999, pp. 3248-3251
Comparison of sensitivity and exposure latitude for polymethylmethacrylate, UVIII, and calixarene using conventional dip and ultrasonically assisted development
Authors: Yasin, S Hasko, DG Ahmed, H
Citation: S. Yasin et al., Comparison of sensitivity and exposure latitude for polymethylmethacrylate, UVIII, and calixarene using conventional dip and ultrasonically assisted development, J VAC SCI B, 17(6), 1999, pp. 3390-3393
Nanolithography using optical contact exposure in the evanescent near field
Authors: Blaikie, RJ Alkaisi, MM McNab, SJ Cumming, DRS Cheung, R Hasko, DG
Citation: Rj. Blaikie et al., Nanolithography using optical contact exposure in the evanescent near field, MICROEL ENG, 46(1-4), 1999, pp. 85-88
Magnetoresistance in modulated width Ni80Fe20 wires
Authors: Yao, CC Hasko, DG Xu, YB Lee, WY Bland, JAC
Citation: Cc. Yao et al., Magnetoresistance in modulated width Ni80Fe20 wires, J APPL PHYS, 85(3), 1999, pp. 1689-1692
Magnetization reversal and magnetic anisotropy in Co network nanostructures
Authors: Lee, WY Leung, HT Zhang, W Xu, YB Hirohata, A Yao, CC Choi, BC Hasko, DG Bland, JAC
Citation: Wy. Lee et al., Magnetization reversal and magnetic anisotropy in Co network nanostructures, IEEE MAGNET, 35(5), 1999, pp. 3475-3477
Pseudo-Hall effect and anisotropic magnetoresistance in a micronscale Ni80Fe20 device
Authors: Yao, CC Hasko, DG Lee, WY Hirohata, A Xu, YB Bland, JAC
Citation: Cc. Yao et al., Pseudo-Hall effect and anisotropic magnetoresistance in a micronscale Ni80Fe20 device, IEEE MAGNET, 35(5), 1999, pp. 3616-3618
Influence of lateral geometry on magnetoresistance and magnetisation reversal in Ni80Fe20 wires
Authors: Yao, CC Hasko, DG Lee, WY Hirohata, A Xu, YB Bland, JAC
Citation: Cc. Yao et al., Influence of lateral geometry on magnetoresistance and magnetisation reversal in Ni80Fe20 wires, IEEE MAGNET, 35(5), 1999, pp. 2865-2867
Charge storage in GaAs metal insulator semiconductor field effect transistor metal nanodot memory structures
Authors: Sabri, F Hasko, DG
Citation: F. Sabri et Dg. Hasko, Charge storage in GaAs metal insulator semiconductor field effect transistor metal nanodot memory structures, APPL PHYS L, 74(20), 1999, pp. 2996-2998
Dynamic scaling of magnetic hysteresis in micron-sized Ni80Fe20 disks
Authors: Lee, WY Choi, BC Lee, J Yao, CC Xu, YB Hasko, DG Bland, JAC
Citation: Wy. Lee et al., Dynamic scaling of magnetic hysteresis in micron-sized Ni80Fe20 disks, APPL PHYS L, 74(11), 1999, pp. 1609-1611
Risultati: 1-22 |