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Results: 1-19 |
Results: 19
Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layermorphology and doping
Authors: Calleja, E Sanchez-Garcia, MA Calle, F Naranjo, FB Munoz, E Jahn, U Ploog, K Sanchez, J Calleja, JM Saarinen, K Hautojarvi, P
Citation: E. Calleja et al., Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layermorphology and doping, MAT SCI E B, 82(1-3), 2001, pp. 2-8
The stabilization of a positron lifetime spectrometer with a high-accuracytime reference
Authors: Nissila, J Karppinen, M Rytsola, K Oila, J Saarinen, K Hautojarvi, P
Citation: J. Nissila et al., The stabilization of a positron lifetime spectrometer with a high-accuracytime reference, NUCL INST A, 466(3), 2001, pp. 527-537
Positron thermalization in Si and GaAs - art. no. 165201
Authors: Nissila, J Saarinen, K Hautojarvi, P
Citation: J. Nissila et al., Positron thermalization in Si and GaAs - art. no. 165201, PHYS REV B, 6316(16), 2001, pp. 5202
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers - art. no. 045205
Authors: Oila, J Ranki, V Kivioja, J Saarinen, K Hautojarvi, P Likonen, J Baranowski, JM Pakula, K Suski, T Leszczynski, M Grzegory, I
Citation: J. Oila et al., Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers - art. no. 045205, PHYS REV B, 6304(4), 2001, pp. 5205
Adsorption of HgCl2 molecules on Au(111) surfaces studied by scanning tunneling microscopy
Authors: Laakso, A Lahtinen, J Levlin, M Hautojarvi, P
Citation: A. Laakso et al., Adsorption of HgCl2 molecules on Au(111) surfaces studied by scanning tunneling microscopy, J CHEM PHYS, 115(8), 2001, pp. 3763-3768
Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures
Authors: Barthe, MF Henry, L Corbel, C Blondiaux, G Saarinen, K Hautojarvi, P Hugonnard, E Di Cioccio, L Letertre, F Ghyselen, B
Citation: Mf. Barthe et al., Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures, PHYS REV B, 62(24), 2000, pp. 16638-16644
Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation
Authors: Desgardin, P Oila, J Saarinen, K Hautojarvi, P Tournie, E Faurie, JP Corbel, C
Citation: P. Desgardin et al., Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation, PHYS REV B, 62(23), 2000, pp. 15711-15717
Low-temperature positron diffusion in GaAs
Authors: Laine, T Saarinen, K Hautojarvi, P
Citation: T. Laine et al., Low-temperature positron diffusion in GaAs, PHYS REV B, 62(12), 2000, pp. 8058-8061
Study of the effects of Mg and Be co-doping in GaN layers
Authors: Naranjo, FB Sanchez-Garcia, MA Pau, JL Jimenez, A Calleja, E Munoz, E Oila, J Saarinen, K Hautojarvi, P
Citation: Fb. Naranjo et al., Study of the effects of Mg and Be co-doping in GaN layers, PHYS ST S-A, 180(1), 2000, pp. 97-102
Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals
Authors: Saarinen, K Nissila, J Oila, J Ranki, V Hakala, M Puska, MJ Hautojarvi, P Likonen, J Suski, T Grzegory, I Lucznik, B Porowski, S
Citation: K. Saarinen et al., Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals, PHYSICA B, 274, 1999, pp. 33-38
The structure of vacancy-impurity complexes in highly n-type Si
Authors: Saarinen, K Nissila, J Kauppinen, H Hakala, M Puska, MJ Hautojarvi, P Corbel, C
Citation: K. Saarinen et al., The structure of vacancy-impurity complexes in highly n-type Si, PHYSICA B, 274, 1999, pp. 463-467
The deactivation of nitrogen accepters in ZnSxSe1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements
Authors: Oila, J Saarinen, K Laine, T Hautojarvi, P Uusimaa, P Pessa, M Likonen, J
Citation: J. Oila et al., The deactivation of nitrogen accepters in ZnSxSe1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements, PHYSICA B, 274, 1999, pp. 902-906
Evidence on a bond-breaking relaxation in the bistable centers In and Ga in CdF2
Authors: Nissila, J Saarinen, K Hautojarvi, P Suchocki, A Langer, JM
Citation: J. Nissila et al., Evidence on a bond-breaking relaxation in the bistable centers In and Ga in CdF2, PHYSICA B, 274, 1999, pp. 915-918
Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnS0.06Se0.94
Authors: Oila, J Saarinen, K Laine, T Hautojarvi, P Uusimaa, P Pessa, M Likonen, J
Citation: J. Oila et al., Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnS0.06Se0.94, PHYS REV B, 59(20), 1999, pp. R12736-R12739
Identification of vacancy-impurity complexes in highly n-type Si
Authors: Saarinen, K Nissila, J Kauppinen, H Hakala, M Puska, MJ Hautojarvi, P Corbel, C
Citation: K. Saarinen et al., Identification of vacancy-impurity complexes in highly n-type Si, PHYS REV L, 82(9), 1999, pp. 1883-1886
Universality of the bond-breaking mechanism in defect bistability: Observation of open volume in the deep states of In and Ga in CdF2
Authors: Nissila, J Saarinen, K Hautojarvi, P Suchocki, A Langer, JM
Citation: J. Nissila et al., Universality of the bond-breaking mechanism in defect bistability: Observation of open volume in the deep states of In and Ga in CdF2, PHYS REV L, 82(16), 1999, pp. 3276-3279
Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of n-type conductivity
Authors: Laine, T Saarinen, K Hautojarvi, P Corbel, C Missous, M
Citation: T. Laine et al., Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of n-type conductivity, J APPL PHYS, 86(4), 1999, pp. 1888-1897
The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals
Authors: Saarinen, K Nissila, J Hautojarvi, P Likonen, J Suski, T Grzegory, I Lucznik, B Porowski, S
Citation: K. Saarinen et al., The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals, APPL PHYS L, 75(16), 1999, pp. 2441-2443
Positron annihilation spectroscopy of defects in semiconductors
Authors: Saarinen, K Hautojarvi, P Corbel, C
Citation: K. Saarinen et al., Positron annihilation spectroscopy of defects in semiconductors, SEM SEMIMET, 51, 1998, pp. 209-285
Risultati: 1-19 |