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Results:
1-23
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Results: 23
Authors:
Hicks, RF
Fu, Q
Li, L
Visbeck, SB
Sun, Y
Li, CH
Law, DC
Citation: Rf. Hicks et al., The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors, J PHYS IV, 11(PR3), 2001, pp. 31-37
Authors:
Fu, Q
Begarney, MJ
Li, CH
Law, DC
Hicks, RF
Citation: Q. Fu et al., Phase transitions of III-V compound semiconductor surfaces in the MOVPE environment, J CRYST GR, 225(2-4), 2001, pp. 405-409
Authors:
Park, J
Henins, I
Herrmann, HW
Selwyn, GS
Hicks, RF
Citation: J. Park et al., Discharge phenomena of an atmospheric pressure radio-frequency capacitive plasma source, J APPL PHYS, 89(1), 2001, pp. 20-28
Authors:
Begarney, MJ
Li, CH
Law, DC
Visbeck, SB
Sun, Y
Hicks, RF
Citation: Mj. Begarney et al., Reflectance difference spectroscopy of mixed phases of indium phosphide (001), APPL PHYS L, 78(1), 2001, pp. 55-57
Authors:
Fu, Q
Li, L
Li, CH
Begarney, MJ
Law, DC
Hicks, RF
Citation: Q. Fu et al., Mechanism of arsine adsorption on the gallium-rich GaAs(001)-(4 x 2) surface, J PHYS CH B, 104(23), 2000, pp. 5595-5602
Authors:
Fu, Q
Li, L
Hicks, RF
Citation: Q. Fu et al., Ab initio cluster calculations of hydrogenated GaAs(001) surfaces, PHYS REV B, 61(16), 2000, pp. 11034-11040
Authors:
Li, L
Fu, Q
Li, CH
Han, BK
Hicks, RF
Citation: L. Li et al., Determination of InP(001) surface reconstructions by STM and infrared spectroscopy of adsorbed hydrogen, PHYS REV B, 61(15), 2000, pp. 10223-10228
Authors:
Jeong, JY
Park, J
Henins, I
Babayan, SE
Tu, VJ
Selwyn, GS
Ding, G
Hicks, RF
Citation: Jy. Jeong et al., Reaction chemistry in the afterglow of an oxygen-helium, atmospheric-pressure plasma, J PHYS CH A, 104(34), 2000, pp. 8027-8032
Authors:
Tu, VJ
Jeong, JY
Schutze, A
Babayan, SE
Ding, G
Selwyn, GS
Hicks, RF
Citation: Vj. Tu et al., Tantalum etching with a nonthermal atmospheric-pressure plasma, J VAC SCI A, 18(6), 2000, pp. 2799-2805
Authors:
Begarney, MJ
Li, L
Li, CH
Law, DC
Fu, Q
Hicks, RF
Citation: Mj. Begarney et al., Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide (001), PHYS REV B, 62(12), 2000, pp. 8092-8097
Authors:
Law, DC
Li, L
Begarney, MJ
Hicks, RF
Citation: Dc. Law et al., Analysis of the growth modes for gallium arsenide metalorganic vapor-phaseepitaxy, J APPL PHYS, 88(1), 2000, pp. 508-512
Authors:
Li, CH
Li, L
Fu, Q
Begarney, MJ
Hicks, RF
Citation: Ch. Li et al., Stress-induced anisotropy of phosphorous islands on gallium arsenide, APPL PHYS L, 77(14), 2000, pp. 2139-2141
Authors:
Park, J
Henins, I
Herrmann, HW
Selwyn, GS
Jeong, JY
Hicks, RF
Shim, D
Chang, CS
Citation: J. Park et al., An atmospheric pressure plasma source, APPL PHYS L, 76(3), 2000, pp. 288-290
Authors:
Fu, Q
Li, L
Begarney, MJ
Han, BK
Law, DC
Hicks, RF
Citation: Q. Fu et al., Site-specific chemistry of gallium arsenide metalorganic chemical vapor deposition, J PHYS IV, 9(P8), 1999, pp. 3-14
Authors:
Jeong, JY
Babayan, SE
Schutze, A
Tu, VJ
Park, J
Henins, I
Selwyn, GS
Hicks, RF
Citation: Jy. Jeong et al., Etching polyimide with a nonequilibrium atmospheric-pressure plasma jet, J VAC SCI A, 17(5), 1999, pp. 2581-2585
Authors:
Li, L
Han, BK
Fu, Q
Hicks, RF
Citation: L. Li et al., Example of a compound semiconductor surface that mimics silicon: The InP(001)-(2x1) reconstruction, PHYS REV L, 82(9), 1999, pp. 1879-1882
Authors:
Hicks, RF
Qi, H
Fu, Q
Han, BK
Li, L
Citation: Rf. Hicks et al., Hydrogen adsorption on GaAs (001) reconstructions, J CHEM PHYS, 110(21), 1999, pp. 10498-10508
Authors:
Begarney, MJ
Li, L
Han, BK
Law, DC
Li, CH
Yoon, H
Goorsky, MS
Hicks, RF
Citation: Mj. Begarney et al., Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy, J APPL PHYS, 86(1), 1999, pp. 318-324
Authors:
Gan, S
Li, L
Begarney, MJ
Law, D
Han, BK
Hicks, RF
Citation: S. Gan et al., Step structure of arsenic-terminated vicinal Ge (100), J APPL PHYS, 85(3), 1999, pp. 2004-2006
Authors:
Li, L
Han, BK
Law, D
Li, CH
Fu, Q
Hicks, RF
Citation: L. Li et al., A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy, APPL PHYS L, 75(5), 1999, pp. 683-685
Authors:
Schutze, A
Jeong, JY
Babayan, SE
Park, J
Selwyn, GS
Hicks, RF
Citation: A. Schutze et al., The atmospheric-pressure plasma jet: A review and comparison to other plasma sources, IEEE PLAS S, 26(6), 1998, pp. 1685-1694
Authors:
Li, L
Han, BK
Law, D
Begarney, M
Hicks, RF
Citation: L. Li et al., Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 28-33
Authors:
Li, L
Han, BK
Hicks, RF
Citation: L. Li et al., Surface phases of GaAs and InAs (001) found in the metalorganic vapor-phase epitaxy environment, APPL PHYS L, 73(9), 1998, pp. 1239-1241
Risultati:
1-23
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