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Results: 1-25/36
Authors:
Ohno, Y
Kitada, T
Shimomura, S
Hiyamizu, S
Citation: Y. Ohno et al., Large anisotropy of electron mobilities in laterally modulated two-dimensional systems grown on the (775)B-oriented GaAs substrates by molecular beamepitaxy, JPN J A P 2, 40(10A), 2001, pp. L1058-L1060
Authors:
Nitta, T
Ohno, Y
Shimomura, S
Hiyamizu, S
Citation: T. Nitta et al., Highly uniform and high optical quality In0.22Ga0.78As/GaAs quantum wires grown on (221)A GaAs substrate by molecular beam epitaxy, J VAC SCI B, 19(5), 2001, pp. 1824-1827
Authors:
Watanabe, I
Kanzaki, K
Aoki, T
Kitada, T
Shimomura, S
Hiyamizu, S
Citation: I. Watanabe et al., Mobility enhancement by reduced remote impurity scattering in a pseudomorphic ln(0.7)Ga(0.3)As/In0.52Al0.48As quantum well high electron mobility transistor structure with (411) A super-flat interfaces grown by molecular-beam epitaxy, J VAC SCI B, 19(4), 2001, pp. 1515-1518
Authors:
Kitada, T
Nii, K
Hiraoka, T
Shimomura, S
Hiyamizu, S
Citation: T. Kitada et al., Improved interface abruptness in pseudomorphic InGaAs/AlGaAs quantum wellswith (411) A superflat interfaces grown by molecular beam epitaxy, J VAC SCI B, 19(4), 2001, pp. 1546-1549
Authors:
Endoh, A
Yamashita, Y
Higashiwaki, M
Hikosaka, K
Mimura, T
Hiyamizu, S
Matsui, A
Citation: A. Endoh et al., High RF performance of 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs, IEICE TR EL, E84C(10), 2001, pp. 1328-1334
Authors:
Yamashita, Y
Endoh, A
Shinohara, K
Higashiwaki, M
Hikosaka, K
Mimura, T
Hiyamizu, S
Matsui, T
Citation: Y. Yamashita et al., Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency, IEEE ELEC D, 22(8), 2001, pp. 367-369
Authors:
Shinohara, K
Yamashita, Y
Endoh, A
Hikosaka, K
Matsui, T
Mimura, T
Hiyamizu, S
Citation: K. Shinohara et al., Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency, IEEE ELEC D, 22(11), 2001, pp. 507-509
Authors:
Watatani, C
Edamatsu, K
Itoh, T
Hayashi, H
Shimomura, S
Hiyamizu, S
Citation: C. Watatani et al., Confined multiexciton states of GaAs/AlGaAs quantum dots grown on a (411)AGaAs surface, PHYS ST S-B, 224(2), 2001, pp. 353-356
Authors:
Nakajima, K
Durbin, SD
Capper, P
Hiyamizu, S
Citation: K. Nakajima et al., Proceedings of the First Asian Conference on Crystal Growth and Crystal Technology Sendai, Japan, 29 August-1 September 2000 - Editors' preface, J CRYST GR, 229(1), 2001, pp. XIII-XIII
Authors:
Shimomura, S
Kitano, Y
Kuge, H
Kitada, T
Nakajima, K
Hiyamizu, S
Citation: S. Shimomura et al., Lattice-matched InxGa1-xAs/InxAl1-xAs quantum wells (x=0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beamepitaxy, J CRYST GR, 227, 2001, pp. 72-76
Authors:
Tatsuoka, Y
Uemura, M
Kitada, T
Shimomura, S
Hiyamizu, S
Citation: Y. Tatsuoka et al., Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate, J CRYST GR, 227, 2001, pp. 266-270
Authors:
Kitada, T
Aoki, T
Watanabe, I
Shimomura, S
Hiyamizu, S
Citation: T. Kitada et al., Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE, J CRYST GR, 227, 2001, pp. 289-293
Authors:
Ohno, Y
Nitta, T
Shimomura, S
Hiyamizu, S
Citation: Y. Ohno et al., Stacking effect of self-organized In0.15Ga0.85As quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 970-974
Authors:
Yamashita, Y
Endoh, A
Higashiwaki, M
Hikosaka, K
Mimura, T
Hiyamizu, S
Matsui, T
Citation: Y. Yamashita et al., High f(T) 50-nm-gate InAlAs/InGaAs high electron mobility transistors lattice-matched to InP substrates, JPN J A P 2, 39(8B), 2000, pp. L838-L840
Authors:
Higashiwaki, M
Kitada, T
Aoki, T
Shimomura, S
Yamashita, Y
Endoh, A
Hikosaka, K
Mimura, T
Matsui, T
Hiyamizu, S
Citation: M. Higashiwaki et al., DC and RF performance of 50 nm gate pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistors grown on (411)A-oriented InP substrates by molecular-beam epitaxy, JPN J A P 2, 39(7B), 2000, pp. L720-L722
Authors:
Tatsuoka, Y
Kamimoto, H
Kitada, T
Shimomura, S
Hiyamizu, S
Citation: Y. Tatsuoka et al., Surface migration of group V atoms in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1549-1552
Authors:
Kamimoto, H
Tatsuoka, Y
Kitada, T
Shimomura, S
Hiyamizu, S
Citation: H. Kamimoto et al., In0.18Ga0.82As/GaAs1-yPy quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1572-1575
Authors:
Kitano, Y
Kuriyama, R
Kitada, T
Shimomura, S
Hiyamizu, S
Nishijima, Y
Ishikawa, H
Citation: Y. Kitano et al., In0.05Ga0.95As/Al0.3Ga0.7As quantum wells grown on a (411)A-oriented In0.06Ga0.94As ternary substrate by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1576-1578
Authors:
Kitada, T
Tatsuoka, Y
Shimomura, S
Hiyamizu, S
Citation: T. Kitada et al., As-4 pressure dependence of surface segregation of indium atoms during molecular beam epitaxy of In0.08Ga0.92As/GaAs superlattices on (411)A GaAs substrates, J VAC SCI B, 18(3), 2000, pp. 1579-1582
Authors:
Aoki, T
Kitada, T
Shimomura, S
Hiyamizu, S
Citation: T. Aoki et al., Super-flat interfaces in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1598-1600
Authors:
Ohno, Y
Higashiwaki, M
Shimomura, S
Hiyamizu, S
Ikawa, S
Citation: Y. Ohno et al., Laser operation at room temperature of self-organized In0.1Ga0.9As/(GaAs)(6)(AlAs)(1) quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1672-1674
Authors:
Shinohara, K
Shimomura, S
Hiyamizu, S
Citation: K. Shinohara et al., Sharp transmission coefficient in GaAs/AlAs resonant tunneling diodes with(411)A superflat interfaces grown by molecular beam epitaxy, JPN J A P 1, 38(9A), 1999, pp. 5037-5039
Authors:
Shinohara, K
Shimizu, Y
Shimomura, S
Hiyamizu, S
Citation: K. Shinohara et al., Recovery of (411)A superflat interfaces in GaAs/Al0.3Ga0.7As quantum wellsgrown on (411)A GaAs substrate by molecular beam epitaxy, JPN J A P 1, 38(8), 1999, pp. 4715-4717
Authors:
Kitada, T
Ohashi, M
Shimomura, S
Hiyamizu, S
Citation: T. Kitada et al., High-quality InGaAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy, JPN J A P 1, 38(4A), 1999, pp. 1888-1891
Authors:
Kitada, T
Nii, K
Hiraoka, T
Shimomura, S
Hiyamizu, S
Citation: T. Kitada et al., High-quality InAlAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy, J VAC SCI B, 17(4), 1999, pp. 1482-1484