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Results: 1-13 |
Results: 13
Defects in undoped and Mg-doped GaN and AlxGa1-xN
Authors: Meyer, BK Hofmann, DM Leiter, FH Meister, D Topf, M Alves, H Romanov, N
Citation: Bk. Meyer et al., Defects in undoped and Mg-doped GaN and AlxGa1-xN, MAT SCI E B, 82(1-3), 2001, pp. 77-81
The oxygen vacancy as the origin of a green emission in undoped ZnO
Authors: Leiter, FH Alves, HR Hofstaetter, A Hofmann, DM Meyer, BK
Citation: Fh. Leiter et al., The oxygen vacancy as the origin of a green emission in undoped ZnO, PHYS ST S-B, 226(1), 2001, pp. R4-R5
Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation
Authors: Zhang, W Roesel, S Alves, HR Meister, D Kriegseis, W Hofmann, DM Meyer, BK Riemann, T Veit, P Blaesing, J Krost, A Christen, J
Citation: W. Zhang et al., Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation, APPL PHYS L, 78(6), 2001, pp. 772-774
New playing rules for crisis management - What can we expect from financial institutions
Authors: Hofmann, DM
Citation: Dm. Hofmann, New playing rules for crisis management - What can we expect from financial institutions, INT POLITIK, 55(6), 2000, pp. 23-31
Optically detected cyclotron resonance investigations on 4H and 6H SiC: Band-structure and transport properties
Authors: Meyer, BK Hofmann, DM Volm, D Chen, WM Son, NT Janzen, E
Citation: Bk. Meyer et al., Optically detected cyclotron resonance investigations on 4H and 6H SiC: Band-structure and transport properties, PHYS REV B, 61(7), 2000, pp. 4844-4849
Defects and defect identification in group III-nitrides
Authors: Meyer, BK Hofmann, DM Alves, H
Citation: Bk. Meyer et al., Defects and defect identification in group III-nitrides, MAT SCI E B, 71, 2000, pp. 69-76
Annealing studies on CuIn(Ga)Se-2: the influence of gallium
Authors: Dirnstorfer, I Burkhardt, W Kriegseis, W Osterreicher, I Alves, H Hofmann, DM Ka, O Polity, A Meyer, BK Braunger, D
Citation: I. Dirnstorfer et al., Annealing studies on CuIn(Ga)Se-2: the influence of gallium, THIN SOL FI, 361, 2000, pp. 400-405
The red (1.8 eV) luminescence in epitaxially grown GaN
Authors: Hofmann, DM Meyer, BK Alves, H Leiter, F Burkhard, W Romanov, N Kim, Y Kruger, J Weber, ER
Citation: Dm. Hofmann et al., The red (1.8 eV) luminescence in epitaxially grown GaN, PHYS ST S-A, 180(1), 2000, pp. 261-265
Optical transitions of the Mg acceptor in GaN
Authors: Hofmann, DM Meyer, BK Leiter, F von Forster, W Alves, H Romanov, N Amano, H Akasaki, I
Citation: Dm. Hofmann et al., Optical transitions of the Mg acceptor in GaN, JPN J A P 2, 38(12A), 1999, pp. L1422-L1424
Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration
Authors: Hofmann, DM Burkhardt, W Leiter, F von Forster, W Alves, H Hofstaetter, A Meyer, BK Romanov, NG Amano, H Akasaki, I
Citation: Dm. Hofmann et al., Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration, PHYSICA B, 274, 1999, pp. 43-45
Transport investigations on high purity MOVPE grown GaAs
Authors: Steude, G Hofmann, DM Meyer, BK Hartdegen, H Hollfelder, M
Citation: G. Steude et al., Transport investigations on high purity MOVPE grown GaAs, PHYS ST S-B, 216(2), 1999, pp. 1039-1047
Postgrowth thermal treatment of CuIn(Ga)Se-2: Characterization of doping levels in In-rich thin films
Authors: Dirnstorfer, I Hofmann, DM Meister, D Meyer, BK
Citation: I. Dirnstorfer et al., Postgrowth thermal treatment of CuIn(Ga)Se-2: Characterization of doping levels in In-rich thin films, J APPL PHYS, 85(3), 1999, pp. 1423-1428
Modified compensation model of CdTe
Authors: Fiederle, M Eiche, C Salk, M Schwarz, R Benz, KW Stadler, W Hofmann, DM Meyer, BK
Citation: M. Fiederle et al., Modified compensation model of CdTe, J APPL PHYS, 84(12), 1998, pp. 6689-6692
Risultati: 1-13 |