AAAAAA

   
Results: 1-17 |
Results: 17
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
Authors: Chung, GY Tin, CC Williams, JR McDonald, K Chanana, RK Weller, RA Pantelides, ST Feldman, LC Holland, OW Das, MK Palmour, JW
Citation: Gy. Chung et al., Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide, IEEE ELEC D, 22(4), 2001, pp. 176-178
Binding energy of vacancies to clusters formed in Si by high-energy ion implantation
Authors: Kalyanaraman, R Haynes, TE Holland, OW Gossmann, HJL Rafferty, CS Gilmer, GH
Citation: R. Kalyanaraman et al., Binding energy of vacancies to clusters formed in Si by high-energy ion implantation, APPL PHYS L, 79(13), 2001, pp. 1983-1985
Material and n-p junction characteristics of As- and Sb-implanted SiC
Authors: Tucker, JB Rao, MV Holland, OW Chi, PH Braga, GCB Freitas, JA Papanicolaou, N
Citation: Jb. Tucker et al., Material and n-p junction characteristics of As- and Sb-implanted SiC, DIAM RELAT, 9(11), 2000, pp. 1887-1896
Al, B, and Ga ion-implantation doping of SiC
Authors: Handy, EM Rao, MV Holland, OW Chi, PH Jones, KA Derenge, MA Vispute, RD Venkatesan, T
Citation: Em. Handy et al., Al, B, and Ga ion-implantation doping of SiC, J ELEC MAT, 29(11), 2000, pp. 1340-1345
Acceptor ion-implantation in SiC
Authors: Handy, EM Rao, MV Holland, OW Jones, KA Chi, PH
Citation: Em. Handy et al., Acceptor ion-implantation in SiC, NUCL INST B, 166, 2000, pp. 395-398
Cluster ion beam smoothing of SiC and YBCO surfaces
Authors: Fathy, D Holland, OW Liu, R Wosik, J Chu, WK
Citation: D. Fathy et al., Cluster ion beam smoothing of SiC and YBCO surfaces, MATER LETT, 44(3-4), 2000, pp. 248-252
Variable-dose (10(17)-10(20) cm(-3)) phosphorus ion implantation into 4H-SiC
Authors: Handy, EM Rao, MV Holland, OW Jones, KA Derenge, MA Papanicolaou, N
Citation: Em. Handy et al., Variable-dose (10(17)-10(20) cm(-3)) phosphorus ion implantation into 4H-SiC, J APPL PHYS, 88(10), 2000, pp. 5630-5634
Comment on "Interstitial-type defects away from the projected ion range inhigh energy ion implanted and annealed silicon" [Appl. Phys. Lett. 75, 1279 (1999)]
Authors: Venezia, VC Brown, RA Kalyanaraman, R Haynes, TE Holland, OW Williams, JS
Citation: Vc. Venezia et al., Comment on "Interstitial-type defects away from the projected ion range inhigh energy ion implanted and annealed silicon" [Appl. Phys. Lett. 75, 1279 (1999)], APPL PHYS L, 77(1), 2000, pp. 151-152
Complete surface exfoliation of 4H-SiC by H+- and Si+-coimplantation
Authors: Bennett, JA Holland, OW Budde, M Thomas, DK Feldman, LC
Citation: Ja. Bennett et al., Complete surface exfoliation of 4H-SiC by H+- and Si+-coimplantation, APPL PHYS L, 76(22), 2000, pp. 3265-3267
Annealing ion implanted SiC with an AlN cap
Authors: Jones, KA Shah, PB Kirchner, KW Lareau, RT Wood, MC Ervin, MH Vispute, RD Sharma, RP Venkatesan, T Holland, OW
Citation: Ka. Jones et al., Annealing ion implanted SiC with an AlN cap, MAT SCI E B, 61-2, 1999, pp. 281-286
Donor ion-implantation doping into SiC
Authors: Rao, MV Tucker, J Holland, OW Papanicolaou, N Chi, PH Kretchmer, JW Ghezzo, M
Citation: Mv. Rao et al., Donor ion-implantation doping into SiC, J ELEC MAT, 28(3), 1999, pp. 334-340
Ion-implantation in SiC and GaN
Authors: Papanicolaou, N Rao, MV Molnar, B Tucker, J Edwards, A Holland, OW Ridgway, MC
Citation: N. Papanicolaou et al., Ion-implantation in SiC and GaN, NUCL INST B, 148(1-4), 1999, pp. 416-420
Ion-implantation in bulk semi-insulating 4H-SiC
Authors: Rao, MV Tucker, JB Ridgway, MC Holland, OW Papanicolaou, N Mittereder, J
Citation: Mv. Rao et al., Ion-implantation in bulk semi-insulating 4H-SiC, J APPL PHYS, 86(2), 1999, pp. 752-758
Optical and structural properties of epitaxial MgxZn1-xO alloys
Authors: Sharma, AK Narayan, J Muth, JF Teng, CW Jin, C Kvit, A Kolbas, RM Holland, OW
Citation: Ak. Sharma et al., Optical and structural properties of epitaxial MgxZn1-xO alloys, APPL PHYS L, 75(21), 1999, pp. 3327-3329
Effects of irradiation temperature and dose on exfoliation of H+-implantedsilicon carbide
Authors: Gregory, RB Wetteroth, TA Wilson, SR Holland, OW Thomas, DK
Citation: Rb. Gregory et al., Effects of irradiation temperature and dose on exfoliation of H+-implantedsilicon carbide, APPL PHYS L, 75(17), 1999, pp. 2623-2625
Vacancy defects in solid-phase epitaxial grown layers of self-implanted Si
Authors: Xu, J Roth, EG Holland, OW Mills, AP Suzuki, R
Citation: J. Xu et al., Vacancy defects in solid-phase epitaxial grown layers of self-implanted Si, APPL PHYS L, 74(7), 1999, pp. 997-999
Control of diffusion of implanted boron in preamorphized Si: Elimination of interstitial defects at the amorphous-crystal interface
Authors: Roth, EG Holland, OW Thomas, DK
Citation: Eg. Roth et al., Control of diffusion of implanted boron in preamorphized Si: Elimination of interstitial defects at the amorphous-crystal interface, APPL PHYS L, 74(5), 1999, pp. 679-681
Risultati: 1-17 |