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Results: 1-13 |
Results: 13

Authors: Choulis, SA Hosea, TJC
Citation: Sa. Choulis et Tjc. Hosea, Growth characterisation of InxGa1-xAs/GaAs/AlAs vertical-cavity surface-emitting laser structure using photomodulated reflectance, IEE P-OPTO, 148(1), 2001, pp. 49-53

Authors: Constant, SB Ghosh, S Sale, TE Hosea, TJC
Citation: Sb. Constant et al., Nondestructive spectroscopic characterisation of visible resonant cavity light emitting diode structures, IEE P-OPTO, 148(1), 2001, pp. 69-73

Authors: Choulis, SA Weinstein, BA Hosea, TJC Kamal-Saadi, M O'Reilly, EP Adams, AR Stolz, W
Citation: Sa. Choulis et al., Effects of confinement on the coupling between nitrogen and band states inInGaAs1-xNx/GaAs (x <= 0.025) structures: Pressure and temperature studies, PHYS ST S-B, 223(1), 2001, pp. 151-156

Authors: Thomas, PJS Hosea, TJC Lancefield, D Meidia, H
Citation: Pjs. Thomas et al., Monitoring thickness changes in GaAs/AlAs partial VCSEL Bragg reflector stacks using optical spectroscopic, x-ray and electron microscopic methods, SEMIC SCI T, 16(2), 2001, pp. 107-117

Authors: Ghosh, S Hosea, TJC Constant, SB
Citation: S. Ghosh et al., Photoreflectance line shape symmetry and quantum-well ground-state excitonenergy in vertical-cavity surface-emitting laser structures, APPL PHYS L, 78(21), 2001, pp. 3250-3252

Authors: Sale, TE Hosea, TJC Thomas, PJS
Citation: Te. Sale et al., Photomodulated reflectance as a valuable nondestructive process tool for VCSELs, IEEE PHOTON, 12(10), 2000, pp. 1328-1330

Authors: Ghosh, S Hosea, TJC
Citation: S. Ghosh et Tjc. Hosea, Nondestructive electroluminescence characterization of as-grown semiconductor optoelectronic device structures using indium-tin-oxide coated electrodes, REV SCI INS, 71(4), 2000, pp. 1911-1912

Authors: Ghosh, S Constant, S Hosea, TJC Sale, TE
Citation: S. Ghosh et al., Edge-emission electroluminescence study of as-grown vertical-cavity surface-emitting laser structures, J APPL PHYS, 88(3), 2000, pp. 1432-1438

Authors: Choulis, SA Ghosh, S Hosea, TJC
Citation: Sa. Choulis et al., Resonances between the cavity mode and five excitonic transitions in an InxGa1-xAs/GaAs/AlAs/AlGaAs vertical-cavity surface-emitting laser structure using photomodulated reflectance, J APPL PHYS, 88(10), 2000, pp. 5547-5553

Authors: Vicente, PMA Thomas, PJS Lancefield, D Sale, TE Hosea, TJC Adams, AR Klar, PJ Raymond, A
Citation: Pma. Vicente et al., Quantum-well and cavity-mode resonance effects in a vertical-cavity surface-emitting laser structure, observed by photoreflectance using hydrostatic pressure and temperature tuning, PHYS ST S-B, 211(1), 1999, pp. 255-262

Authors: Klar, PJ Rowland, G Thomas, PJS Onischenko, A Sale, TE Hosea, TJC Grey, R
Citation: Pj. Klar et al., Photomodulated reflectance study of InxGa1-xAs/GaAs/AlAs microcavity vertical-cavity surface emitting laser structures in the weak-coupling regime: The cavity/ground-state-exciton resonance, PHYS REV B, 59(4), 1999, pp. 2894-2901

Authors: Klar, PJ Rowland, G Thomas, PJS Onischenko, A Sale, TE Hosea, TJC Grey, R
Citation: Pj. Klar et al., Photomodulated reflectance of InxGa1-xAs/GaAs/AlAs microcavity vertical-cavity surface emitting laser structures: Monitoring higher-order quantum well transitions, PHYS REV B, 59(4), 1999, pp. 2902-2909

Authors: Klar, PJ Rowland, G Sale, TE Hosea, TJC Grey, R
Citation: Pj. Klar et al., Reflectance and photomodulated reflectance studies of cavity mode and excitonic transitions in an InGaAs/GaAs/AlAs/AlGaAs VCSEL structure, PHYS ST S-A, 170(1), 1998, pp. 145-158
Risultati: 1-13 |