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Results: 1-14 |
Results: 14
Titanium nitride membrane application to extended gate field effect transistor pH sensor using VLSI technology
Authors: Chin, YL Chou, JC Lei, ZC Sun, TP Chung, WY Hsiung, SK
Citation: Yl. Chin et al., Titanium nitride membrane application to extended gate field effect transistor pH sensor using VLSI technology, JPN J A P 1, 40(11), 2001, pp. 6311-6315
Glucose ENFET doped with MnO2 powder
Authors: Yin, LT Chou, JC Chung, WY Sun, TP Hsiung, KP Hsiung, SK
Citation: Lt. Yin et al., Glucose ENFET doped with MnO2 powder, SENS ACTU-B, 76(1-3), 2001, pp. 187-192
A novel pH sensitive ISFET with on chip temperature sensing using CMOS standard process
Authors: Chin, YL Chou, JC Sun, TP Chung, WY Hsiung, SK
Citation: Yl. Chin et al., A novel pH sensitive ISFET with on chip temperature sensing using CMOS standard process, SENS ACTU-B, 76(1-3), 2001, pp. 582-593
A novel SnO2/Al discrete gate ISFET pH sensor with CMOS standard process
Authors: Chin, YL Chou, JC Sun, TP Liao, HK Chung, WY Hsiung, SK
Citation: Yl. Chin et al., A novel SnO2/Al discrete gate ISFET pH sensor with CMOS standard process, SENS ACTU-B, 75(1-2), 2001, pp. 36-42
Study of indium tin oxide thin film for separative extended gate ISFET
Authors: Yin, LT Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation: Lt. Yin et al., Study of indium tin oxide thin film for separative extended gate ISFET, MATER CH PH, 70(1), 2001, pp. 12-16
Characteristics of silicon nitride after O-2 plasma surface treatment for pH-ISFET applications
Authors: Yin, LT Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation: Lt. Yin et al., Characteristics of silicon nitride after O-2 plasma surface treatment for pH-ISFET applications, IEEE BIOMED, 48(3), 2001, pp. 340-344
Study on separative structure of EnFET to detect acetylcholine
Authors: Chi, LL Yin, LT Chou, JC Chung, WY Sun, TP Hsiung, KP Hsiung, SK
Citation: Ll. Chi et al., Study on separative structure of EnFET to detect acetylcholine, SENS ACTU-B, 71(1-2), 2000, pp. 68-72
Separate structure extended gate H+-ion sensitive field effect transistor on a glass substrate
Authors: Yin, LT Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation: Lt. Yin et al., Separate structure extended gate H+-ion sensitive field effect transistor on a glass substrate, SENS ACTU-B, 71(1-2), 2000, pp. 106-111
The influence of isothermal annealing on tin oxide thin film for pH-ISFET sensor
Authors: Liao, HK Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation: Hk. Liao et al., The influence of isothermal annealing on tin oxide thin film for pH-ISFET sensor, SENS ACTU-B, 65(1-3), 2000, pp. 23-25
Study on SnO2/Al/SiO2/Si ISFET with a metal light shield
Authors: Wu, CL Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation: Cl. Wu et al., Study on SnO2/Al/SiO2/Si ISFET with a metal light shield, MATER CH PH, 63(2), 2000, pp. 153-156
Study on extended gate field effect transistor with tin oxide sensing membrane
Authors: Chi, LL Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation: Ll. Chi et al., Study on extended gate field effect transistor with tin oxide sensing membrane, MATER CH PH, 63(1), 2000, pp. 19-23
Multi-structure ion sensitive field effect transistor with a metal light shield
Authors: Liao, HK Wu, CL Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation: Hk. Liao et al., Multi-structure ion sensitive field effect transistor with a metal light shield, SENS ACTU-B, 61(1-3), 1999, pp. 1-5
Study on pH(pzc) and surface potential of tin oxide gate ISFET
Authors: Liao, HK Chia, LL Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation: Hk. Liao et al., Study on pH(pzc) and surface potential of tin oxide gate ISFET, MATER CH PH, 59(1), 1999, pp. 6-11
Temperature and optical characteristics of tin oxide membrane gate ISFET
Authors: Liao, HK Yang, ES Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation: Hk. Liao et al., Temperature and optical characteristics of tin oxide membrane gate ISFET, IEEE DEVICE, 46(12), 1999, pp. 2278-2281
Risultati: 1-14 |