AAAAAA
Results:
1-16
|
Results: 16
Authors:
Hsu, TM
Chen, X
Duan, S
Miller, RD
Kwok, PY
Citation: Tm. Hsu et al., Universal SNP genotyping assay with fluorescence polarization detection, BIOTECHNIQU, 31(3), 2001, pp. 560
Authors:
Lai, CY
Hsu, TM
Chang, WH
Tseng, KU
Lee, CM
Chuo, CC
Chyi, JI
Citation: Cy. Lai et al., Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN multiple quantum wells, PHYS ST S-B, 228(1), 2001, pp. 77-80
Authors:
Chang, WH
Hsu, TM
Huang, CC
Hsu, SL
Lai, CY
Yeh, NT
Chyi, JI
Citation: Wh. Chang et al., A carrier escape study from InAs self-assembled quantum dots by photocurrent measurement, PHYS ST S-B, 224(1), 2001, pp. 85-88
Authors:
Chang, WH
Hsu, TM
Huang, CC
Yeh, NT
Chyi, JI
Citation: Wh. Chang et al., Effects of electric field and coulomb interaction on the interband transitions of InAs self-assembled quantum dots: A study by modulation reflectancespectroscopy, PHYS ST S-B, 224(1), 2001, pp. 89-92
Authors:
Hsu, TM
Kwok, PY
Citation: Tm. Hsu et Py. Kwok, Advances in molecular medicine, J AM ACAD D, 44(5), 2001, pp. 847-855
Authors:
Chang, WH
Chen, WY
Cheng, MC
Lai, CY
Hsu, TM
Yeh, NT
Chyi, JI
Citation: Wh. Chang et al., Charging of embedded InAs self-assembled quantum dots by space-charge techniques - art. no. 125315, PHYS REV B, 6412(12), 2001, pp. 5315
Authors:
Yeh, NT
Nee, TE
Chyi, JI
Chia, CT
Hsu, TM
Huang, CC
Citation: Nt. Yeh et al., Improved electroluminescence of InAs quantum dots with strain reducing layer, J CRYST GR, 227, 2001, pp. 1044-1048
Authors:
Hsu, TM
Law, SM
Duan, SH
Neri, BP
Kwok, PY
Citation: Tm. Hsu et al., Genotyping single-nucleotide polymorphisms by the invader assay with dual-color fluorescence polarization detection, CLIN CHEM, 47(8), 2001, pp. 1373-1377
Authors:
Hsu, TM
Chang, WH
Huang, CC
Yeh, NT
Chyi, JI
Citation: Tm. Hsu et al., Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots, APPL PHYS L, 78(12), 2001, pp. 1760-1762
Authors:
Chang, WH
Hsu, TM
Yeh, NT
Chyi, JI
Citation: Wh. Chang et al., Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots, PHYS REV B, 62(19), 2000, pp. 13040-13047
Authors:
Chang, WH
Hsu, TM
Huang, CC
Hsu, SL
Lai, CY
Yeh, NT
Nee, TE
Chyi, JI
Citation: Wh. Chang et al., Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots, PHYS REV B, 62(11), 2000, pp. 6959-6962
Authors:
Lai, CY
Hsu, TM
Lin, CL
Wu, CC
Lee, WC
Citation: Cy. Lai et al., Room temperature study of low temperature grown Al0.3Ga0.7As/GaAs multiplequantum wells by modulation reflectance, J APPL PHYS, 87(12), 2000, pp. 8589-8593
Authors:
Hsu, TM
Lan, YS
Chang, WH
Yeh, NT
Chyi, JI
Citation: Tm. Hsu et al., Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing, APPL PHYS L, 76(6), 2000, pp. 691-693
Authors:
Yeh, NT
Nee, TE
Chyi, JI
Hsu, TM
Huang, CC
Citation: Nt. Yeh et al., Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures, APPL PHYS L, 76(12), 2000, pp. 1567-1569
Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots
Authors:
Chang, WH
Hsu, TM
Tsai, KF
Nee, TE
Chyi, JI
Yeh, NT
Citation: Wh. Chang et al., Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots, JPN J A P 1, 38(1B), 1999, pp. 554-557
Authors:
Hsu, TM
Chang, WH
Tsai, KF
Chyi, JI
Yeh, NT
Nee, TE
Citation: Tm. Hsu et al., Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots, PHYS REV B, 60(4), 1999, pp. R2189-R2192
Risultati:
1-16
|