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Results: 1-20 |
Results: 20
Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN
Authors: Haberer, ED Chen, CH Hansen, M Keller, S DenBaars, SP Mishra, UK Hu, EL
Citation: Ed. Haberer et al., Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN, J VAC SCI B, 19(3), 2001, pp. 603-608
Small-signal frequency response of long-wavelength vertical-cavity lasers
Authors: Black, KA Bjorlin, ES Piprek, J Hu, EL Bowers, JE
Citation: Ka. Black et al., Small-signal frequency response of long-wavelength vertical-cavity lasers, IEEE PHOTON, 13(10), 2001, pp. 1049-1051
Spin coherence and dephasing in GaN - art. no. 121202
Authors: Beschoten, B Johnston-Halperin, E Young, DK Poggio, M Grimaldi, JE Keller, S DenBaars, SP Mishra, UK Hu, EL Awschalom, DD
Citation: B. Beschoten et al., Spin coherence and dephasing in GaN - art. no. 121202, PHYS REV B, 6312(12), 2001, pp. 1202
Lateral oxidation kinetics of AlAsSb and related alloys lattice matched toInP
Authors: Mathis, SK Lau, KHA Andrews, AM Hall, EM Almuneau, G Hu, EL Speck, JS
Citation: Sk. Mathis et al., Lateral oxidation kinetics of AlAsSb and related alloys lattice matched toInP, J APPL PHYS, 89(4), 2001, pp. 2458-2464
Interface of directly bonded GaAs and InP
Authors: Jin-Phillipp, NY Sigle, W Black, A Babic, D Bowers, JE Hu, EL Ruhle, M
Citation: Ny. Jin-phillipp et al., Interface of directly bonded GaAs and InP, J APPL PHYS, 89(2), 2001, pp. 1017-1024
Development of selective lateral photoelectrochemical etching of InGaN/GaNfor lift-off applications
Authors: Stonas, AR Margalith, T DenBaars, SP Coldren, LA Hu, EL
Citation: Ar. Stonas et al., Development of selective lateral photoelectrochemical etching of InGaN/GaNfor lift-off applications, APPL PHYS L, 78(13), 2001, pp. 1945-1947
Harmonic distortion in 1.55-mu m vertical-cavity lasers
Authors: Piprek, J Takiguchi, K Black, KA Hu, EL Bowers, JE
Citation: J. Piprek et al., Harmonic distortion in 1.55-mu m vertical-cavity lasers, IEEE PHOTON, 12(12), 2000, pp. 1686-1688
Selection of peptides with semiconductor binding specificity for directed nanocrystal assembly
Authors: Whaley, SR English, DS Hu, EL Barbara, PF Belcher, AM
Citation: Sr. Whaley et al., Selection of peptides with semiconductor binding specificity for directed nanocrystal assembly, NATURE, 405(6787), 2000, pp. 665-668
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures
Authors: Stonas, AR Kozodoy, P Marchand, H Fini, P DenBaars, SP Mishra, UK Hu, EL
Citation: Ar. Stonas et al., Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures, APPL PHYS L, 77(16), 2000, pp. 2610-2612
Channeling as a mechanism for dry etch damage in GaN
Authors: Haberer, ED Chen, CH Abare, A Hansen, M Denbaars, S Coldren, L Mishra, U Hu, EL
Citation: Ed. Haberer et al., Channeling as a mechanism for dry etch damage in GaN, APPL PHYS L, 76(26), 2000, pp. 3941-3943
Cl-2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors
Authors: Chen, CH Keller, S Haberer, ED Zhang, LD DenBaars, SP Hu, EL Mishra, UK Wu, YF
Citation: Ch. Chen et al., Cl-2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors, J VAC SCI B, 17(6), 1999, pp. 2755-2758
In situ preparation of the semiconductor-superconductor interface: Nb contacts on InAs quantum wells
Authors: Bellomi, G Mitchell, WJ Hu, EL
Citation: G. Bellomi et al., In situ preparation of the semiconductor-superconductor interface: Nb contacts on InAs quantum wells, J VAC SCI B, 17(5), 1999, pp. 2001-2004
Selective area chemical vapor deposition of titanium oxide films: Characterization of TI(OC3H7)(4) as an electron beam resist
Authors: Mitchell, WJ Hu, EL
Citation: Wj. Mitchell et El. Hu, Selective area chemical vapor deposition of titanium oxide films: Characterization of TI(OC3H7)(4) as an electron beam resist, J VAC SCI B, 17(4), 1999, pp. 1622-1626
Nonequilibrium supercurrents in mesoscopic Nb-InAs-Nb junctions
Authors: Lehnert, KW Argaman, N Blank, HR Wong, KC Allen, SJ Hu, EL Kroemer, H
Citation: Kw. Lehnert et al., Nonequilibrium supercurrents in mesoscopic Nb-InAs-Nb junctions, MICROEL ENG, 47(1-4), 1999, pp. 377-379
Nonequilibrium ac Josephson effect in mesoscopic Nb-InAs-Nb junctions
Authors: Lehnert, KW Argaman, N Blank, HR Wong, KC Allen, SJ Hu, EL Kroemer, H
Citation: Kw. Lehnert et al., Nonequilibrium ac Josephson effect in mesoscopic Nb-InAs-Nb junctions, PHYS REV L, 82(6), 1999, pp. 1265-1268
Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes
Authors: Young, DK Mack, MP Abare, AC Hansen, M Coldren, LA Denbaars, SP Hu, EL Awschalom, DD
Citation: Dk. Young et al., Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes, APPL PHYS L, 74(16), 1999, pp. 2349-2351
In situ electron-beam lithography on GaAs substrates using a metal alkoxide resist
Authors: Mitchell, WJ Hu, EL
Citation: Wj. Mitchell et El. Hu, In situ electron-beam lithography on GaAs substrates using a metal alkoxide resist, APPL PHYS L, 74(13), 1999, pp. 1916-1918
Optical properties of InGaN/GaN quantum wells with Si doped barriers
Authors: Minsky, MS Chichibu, S Fleischer, SB Abare, AC Bowers, JE Hu, EL Keller, S Mishra, UK DenBaars, SP
Citation: Ms. Minsky et al., Optical properties of InGaN/GaN quantum wells with Si doped barriers, JPN J A P 2, 37(11B), 1998, pp. L1362-L1364
Metallization-induced damage in III-V semiconductors
Authors: Chen, CH Hu, EL Schoenfeld, WV Petroff, PM
Citation: Ch. Chen et al., Metallization-induced damage in III-V semiconductors, J VAC SCI B, 16(6), 1998, pp. 3354-3358
Structural studies of DNA cationic lipid complexes confined in lithographically patterned microchannel arrays
Authors: Li, Y Wong, GCL Caine, E Hu, EL Safinya, CR
Citation: Y. Li et al., Structural studies of DNA cationic lipid complexes confined in lithographically patterned microchannel arrays, INT J THERM, 19(4), 1998, pp. 1165-1174
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