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Results:
1-13
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Results: 13
Authors:
IKARASHI N
ISHIDA K
Citation: N. Ikarashi et K. Ishida, [110]HREM OF INTERFACIAL STRUCTURES IN SEMICONDUCTOR HETEROSTRUCTURES, Microscopy research and technique, 40(3), 1998, pp. 187-205
Authors:
IKARASHI N
Citation: N. Ikarashi, ANALYTICAL TRANSMISSION ELECTRON-MICROSCOPY OF HYDROGEN-INDUCED DEGRADATION IN FERROELECTRIC PB(ZR, TI)O-3 ON A PT ELECTRODE, Applied physics letters, 73(14), 1998, pp. 1955-1957
Authors:
IKARASHI N
TATSUMI T
Citation: N. Ikarashi et T. Tatsumi, SUPPRESSION OF SURFACE ROUGHENING ON STRAINED SI SIGE LAYERS BY LOWERING SURFACE STRESS/, JPN J A P 2, 36(4A), 1997, pp. 377-379
Authors:
IKARASHI N
ISHIDA K
Citation: N. Ikarashi et K. Ishida, HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF ALAS-GAAS SEMICONDUCTOR SUPERLATTICES, Journal of materials science. Materials in electronics, 7(4), 1996, pp. 285-295
Authors:
YAMAGUCHI T
TOMITA T
IKARASHI N
Citation: T. Yamaguchi et al., THERMAL EXPANSIONS OF FERROELECTRIC LI2GE7O15 AND LINAGE4O9, Journal of the Korean Physical Society, 29, 1996, pp. 709-712
Authors:
IKARASHI N
OSHIYAMA A
SAKAI A
TATSUMI T
Citation: N. Ikarashi et al., ROLE OF GE SURFACE SEGREGATION IN SI GE INTERFACIAL ORDERING - INTERFACE FORMATION ON A MONOHYDRIDE SURFACE/, Physical review. B, Condensed matter, 51(20), 1995, pp. 14786-14789
Authors:
IKARASHI N
AKIMOTO K
TASUMI T
ISHIDA K
Citation: N. Ikarashi et al., ORDERED STRUCTURES AT SI ON GE(001) INTERFACES - REPLY, Physical review letters, 75(1), 1995, pp. 185-185
Authors:
AOTO N
NAKAMORI M
YAMASAKI S
HADA H
IKARASHI N
ISHIDA K
TERAOKA Y
NISHIYAMA I
Citation: N. Aoto et al., NATIVE OXIDES ON SI SURFACES OF DEEP-SUBMICRON CONTACT-HOLE BOTTOMS, Journal of applied physics, 77(8), 1995, pp. 3899-3907
Authors:
ONO H
IKARASHI N
Citation: H. Ono et N. Ikarashi, AL DIFFUSION INTO GAAS FROM MONATOMIC ALAS LAYERS INVESTIGATED BY LOCALIZED VIBRATIONAL-MODES, Applied physics letters, 66(5), 1995, pp. 601-603
Authors:
IKARASHI N
TATSUMI T
ISHIDA K
Citation: N. Ikarashi et al., HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF SI GE INTERFACIALSTRUCTURES/, JPN J A P 1, 33(3A), 1994, pp. 1228-1233
Authors:
IKARASHI N
AKIMOTO K
TATSUMI T
ISHIDA K
Citation: N. Ikarashi et al., ORDERED STRUCTURE AT SI GE INTERFACES, Physical review letters, 72(20), 1994, pp. 3198-3201
Authors:
TANAKA M
NISHINAGA T
IKARASHI N
SHIMADA H
Citation: M. Tanaka et al., EPITAXIAL COAL ALAS/GAAS METAL-SEMICONDUCTOR HETEROSTRUCTURES - GROWTH, STRUCTURE, AND ELECTRICAL-PROPERTIES/, Journal of applied physics, 75(2), 1994, pp. 885-896
Authors:
IKARASHI N
TANAKA M
BABA T
SAKAKI H
ISHIDA K
Citation: N. Ikarashi et al., HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF ALAS GAAS INTERFACIAL STRUCTURE IN THE 110 PROJECTION/, JPN J A P 1, 32(6A), 1993, pp. 2824-2831
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1-13
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