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Results:
1-18
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Results: 18
Authors:
ILG M
KRAXENBERGER M
URAM K
SANDLER N
PARKS C
NGUYEN S
Citation: M. Ilg et al., MODULATION-DOPED SILICATE GLASS DEPOSITED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Superlattices and microstructures, 24(5), 1998, pp. 385-388
Authors:
WERNER C
ILG M
URAM K
Citation: C. Werner et al., 3-DIMENSIONAL EQUIPMENT MODELING FOR CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1147-1151
Authors:
KIRCHOFF M
ILG M
COTE D
Citation: M. Kirchoff et al., APPLICATION OF BOROPHOSPHOSILICATE GLASS (BPSG) IN MICROELECTRONIC PROCESSING, Berichte der Bunsengesellschaft fur Physikalische Chemie, 100(9), 1996, pp. 1434-1437
Authors:
BRANDT O
ILG M
PLOOG K
Citation: O. Brandt et al., COHERENTLY STRAINED INAS INSERTIONS IN GAAS - DO THEY FORM QUANTUM WIRES AND DOTS, Microelectronics, 26(8), 1995, pp. 861-870
Authors:
MAZUELAS A
ILG M
JENICHEN B
ALONSO MI
PLOOG KH
Citation: A. Mazuelas et al., ANISOTROPIES IN THE STRUCTURAL-PROPERTIES OF STRAINED (311) (IN,GA)ASGAAS-HETEROSTRUCTURES/, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 159-163
Authors:
ILG M
ALONSO MI
MAZUELAS A
TOURNIE E
PLOOG KH
Citation: M. Ilg et al., ASPECTS OF LOW HETEROSTRUCTURE SYMMETRY IN (311)A (IN,GA)AS GAAS/, Journal of crystal growth, 150(1-4), 1995, pp. 482-486
Authors:
ALONSO MI
ILG M
PLOOG K
TRAMPERT A
Citation: Mi. Alonso et al., EXCITONIC PROPERTIES OF ISOLATED NANOMETER-SIZED INAS ISLANDS IN A GAAS MATRIX, Journal of applied physics, 78(3), 1995, pp. 1980-1983
Authors:
ALONSO MI
ILG M
PLOOG KH
Citation: Mi. Alonso et al., OPTICAL INVESTIGATION OF THE ELECTRONIC-STRUCTURE OF SINGLE ULTRATHININAS LAYERS GROWN PSEUDOMORPHICALLY ON (100) AND (311)A GAAS SUBSTRATES, Physical review. B, Condensed matter, 50(3), 1994, pp. 1628-1635
Authors:
ILG M
PLOOG KH
TRAMPERT A
Citation: M. Ilg et al., LATERAL PIEZOELECTRIC FIELDS IN STRAINED SEMICONDUCTOR HETEROSTRUCTURES, Physical review. B, Condensed matter, 50(23), 1994, pp. 17111-17119
Authors:
ILG M
HEBERLE A
PLOOG KH
Citation: M. Ilg et al., LATERAL PIEZOELECTRIC FIELDS - A UNIVERSAL FEATURE OF STRAINED III-V AND II-VI SEMICONDUCTOR HETEROSTRUCTURES, Solid-state electronics, 37(4-6), 1994, pp. 739-742
Authors:
ILG M
PFLEIDERER B
ALBERT K
RAPP W
BAYER E
Citation: M. Ilg et al., INVESTIGATION OF THE DIFFUSION PROCESS IN CROSS-LINKED POLYSTYRENES BY MEANS OF NMR IMAGING AND SOLID-STATE NMR-SPECTROSCOPY, Macromolecules, 27(10), 1994, pp. 2778-2783
Authors:
PLOOG KH
NOTZEL R
ILG M
Citation: Kh. Ploog et al., TUNABLE GENERATION OF MICROSCOPIC AND MESOSCOPIC STEP ARRAYS ON NON-(100)-ORIENTED GAAS - A NEW ROUTE TO QUANTUM-WIRE STRUCTURES BY EPITAXIAL-GROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1675-1680
Authors:
ILG M
EISSLER D
LANGE C
PLOOG K
Citation: M. Ilg et al., SURFACTANT-MEDIATED MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY (111)B-GAAS, Applied physics. A, Solids and surfaces, 56(4), 1993, pp. 397-399
Authors:
GIANNINI C
TAPFER L
LAGOMARSINO S
BOULLIARD JC
TACCOEN A
CAPELLE B
ILG M
BRANDT O
PLOOG KH
Citation: C. Giannini et al., X-RAY STANDING-WAVE AND HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF THE GAAS INAS/GAAS(100) HETEROINTERFACE/, Physical review. B, Condensed matter, 48(15), 1993, pp. 11496-11499
Authors:
ILG M
PLOOG KH
Citation: M. Ilg et Kh. Ploog, ENHANCED IN SURFACE SEGREGATION DURING MOLECULAR-BEAM EPITAXY OF (IN,GA)AS ON (H11) GAAS FOR SMALL VALUES OF H, Physical review. B, Condensed matter, 48(15), 1993, pp. 11512-11515
Authors:
CASTRILLO P
ALONSO MI
ARMELLES G
ILG M
PLOOG K
Citation: P. Castrillo et al., PIEZOELECTRIC-FIELD-INDUCED LOCALIZATION OF BARRIER STATES IN (211)-ORIENTED INAS GAAS SUPERLATTICES/, Physical review. B, Condensed matter, 47(19), 1993, pp. 12945-12948
Authors:
ILG M
BRANDT O
NOTZEL R
PLOOG K
Citation: M. Ilg et al., GROWTH OF [211]-ORIENTED INAS GAAS HETEROSTRUCTURES/, Journal of crystal growth, 127(1-4), 1993, pp. 927-931
Authors:
ILG M
ALONSO MI
LEHMANN A
PLOOG KH
HOHENSTEIN M
Citation: M. Ilg et al., INVESTIGATION OF INAS SUBMONOLAYER AND MONOLAYER STRUCTURES ON GAAS(100) AND (311) SUBSTRATES, Journal of applied physics, 74(12), 1993, pp. 7188-7197
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1-18
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