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Results: 1-12 |
Results: 12
CLOCKED DOSIMETER COMPATIBLE WITH DIGITAL CMOS TECHNOLOGY
Authors: GARCIAMORENO E INIGUEZ B ROCA M SEGURA J ISERN E
Citation: E. Garciamoreno et al., CLOCKED DOSIMETER COMPATIBLE WITH DIGITAL CMOS TECHNOLOGY, JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, 12(1-2), 1998, pp. 101-110
AN IMPROVED C-INFINITY-CONTINUOUS SMALL-GEOMETRY MOSFET MODELING FOR ANALOG APPLICATIONS
Authors: INIGUEZ B MORENO EG
Citation: B. Iniguez et Eg. Moreno, AN IMPROVED C-INFINITY-CONTINUOUS SMALL-GEOMETRY MOSFET MODELING FOR ANALOG APPLICATIONS, Analog integrated circuits and signal processing, 13(3), 1997, pp. 241-259
RADIATION EFFECTS SIMULATION USING AN UNIFIED MOSFET MODEL
Authors: GARCIAMORENO E INIGUEZ B
Citation: E. Garciamoreno et B. Iniguez, RADIATION EFFECTS SIMULATION USING AN UNIFIED MOSFET MODEL, Physica scripta. T, T69, 1997, pp. 142-145
UNIFIED NOISE MOSFET MODELING
Authors: INIGUEZ B MORENO EG
Citation: B. Iniguez et Eg. Moreno, UNIFIED NOISE MOSFET MODELING, Physica scripta. T, T69, 1997, pp. 174-176
UNIFIED SUBSTRATE CURRENT MODEL FOR MOSFETS
Authors: INIGUEZ B FJELDLY TA
Citation: B. Iniguez et Ta. Fjeldly, UNIFIED SUBSTRATE CURRENT MODEL FOR MOSFETS, Solid-state electronics, 41(1), 1997, pp. 87-94
UNIFIED 1 F NOISE SOI MOSFET MODELING FOR CIRCUIT SIMULATION/
Authors: INIGUEZ B TAMBANI M DESSARD V FLANDRE D
Citation: B. Iniguez et al., UNIFIED 1 F NOISE SOI MOSFET MODELING FOR CIRCUIT SIMULATION/, Electronics Letters, 33(21), 1997, pp. 1781-1782
A PHYSICALLY-BASED C-INFINITY-CONTINUOUS FULLY-DEPLETED SOI MOSFET MODEL FOR ANALOG APPLICATIONS
Authors: INIGUEZ B FERREIRA LF GENTINNE B FLANDRE D
Citation: B. Iniguez et al., A PHYSICALLY-BASED C-INFINITY-CONTINUOUS FULLY-DEPLETED SOI MOSFET MODEL FOR ANALOG APPLICATIONS, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 568-575
DEVELOPMENT OF A C-INFINITY-CONTINUOUS SMALL-SIGNAL MODEL FOR A MOS-TRANSISTOR IN NORMAL OPERATION
Authors: INIGUEZ B MORENO EG
Citation: B. Iniguez et Eg. Moreno, DEVELOPMENT OF A C-INFINITY-CONTINUOUS SMALL-SIGNAL MODEL FOR A MOS-TRANSISTOR IN NORMAL OPERATION, IEEE transactions on computer-aided design of integrated circuits and systems, 14(2), 1995, pp. 163-166
CMOS RADIATION SENSOR WITH BINARY OUTPUT
Authors: MORENO EG INIGUEZ B ROCA M SEGURA J SUREDA S
Citation: Eg. Moreno et al., CMOS RADIATION SENSOR WITH BINARY OUTPUT, IEEE transactions on nuclear science, 42(3), 1995, pp. 174-178
THRESHOLD VOLTAGE MODEL FOR DEEP-SUBMICROMETER MOSFETS - COMMENTS
Authors: INIGUEZ B
Citation: B. Iniguez, THRESHOLD VOLTAGE MODEL FOR DEEP-SUBMICROMETER MOSFETS - COMMENTS, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1712-1712
A PHYSICALLY-BASED C-INFINITY-CONTINUOUS MODEL FOR SMALL-GEOMETRY MOSFETS
Authors: INIGUEZ B MORENO EG
Citation: B. Iniguez et Eg. Moreno, A PHYSICALLY-BASED C-INFINITY-CONTINUOUS MODEL FOR SMALL-GEOMETRY MOSFETS, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 283-287
EXPLICIT C-INFINITY-CONTINUOUS AND GENERAL-MODEL FOR NMOSFETS
Authors: INIGUEZ B MORENO EG
Citation: B. Iniguez et Eg. Moreno, EXPLICIT C-INFINITY-CONTINUOUS AND GENERAL-MODEL FOR NMOSFETS, Electronics Letters, 29(11), 1993, pp. 1036-1037
Risultati: 1-12 |