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Results: 1-8 |
Results: 8
1.3-MU-M SPOT-SIZE CONVERTER INTEGRATED ASM-BH LDS WITH LOW OPERATINGCURRENT AND HIGH COUPLING EFFICIENCY
Authors: FURUSHIMA Y SAKATA Y SASAKI Y YAMAZAKI H KUDO K INOMOTO Y SASAKI T
Citation: Y. Furushima et al., 1.3-MU-M SPOT-SIZE CONVERTER INTEGRATED ASM-BH LDS WITH LOW OPERATINGCURRENT AND HIGH COUPLING EFFICIENCY, Electronics Letters, 34(8), 1998, pp. 767-768
DIFFERENT-WAVELENGTH MODULATOR-INTEGRATED DFB-LDS FOR 1.58-MU-M BAND WDM SYSTEMS
Authors: KUDO K MUROYA Y NAKAZAKI T INOMOTO Y ISHIZAKA M YAMAGUCHI M
Citation: K. Kudo et al., DIFFERENT-WAVELENGTH MODULATOR-INTEGRATED DFB-LDS FOR 1.58-MU-M BAND WDM SYSTEMS, Electronics Letters, 34(20), 1998, pp. 1946-1947
LOW-THRESHOLD AND HIGH UNIFORMITY FOR NOVEL 1.3-MU-M-STRAINED INGAASPMQW DC-PBH LDS FABRICATED BY THE ALL-SELECTIVE MOVPE TECHNIQUE
Authors: SAKATA Y INOMOTO Y SAITO D KOMATSU K HASUMI H
Citation: Y. Sakata et al., LOW-THRESHOLD AND HIGH UNIFORMITY FOR NOVEL 1.3-MU-M-STRAINED INGAASPMQW DC-PBH LDS FABRICATED BY THE ALL-SELECTIVE MOVPE TECHNIQUE, IEEE photonics technology letters, 9(3), 1997, pp. 291-293
MODULATOR INTEGRATED DFB LASERS WITH MORE THAN 600-KM TRANSMISSION CAPABILITY AT 2.5 GB S/
Authors: ISHIZAKA M YAMAGUCHI M SAKATA Y INOMOTO Y SHIMIZU J KOMATSU K
Citation: M. Ishizaka et al., MODULATOR INTEGRATED DFB LASERS WITH MORE THAN 600-KM TRANSMISSION CAPABILITY AT 2.5 GB S/, IEEE photonics technology letters, 9(10), 1997, pp. 1406-1408
LOW-THRESHOLD STRAINED MULTIQUANTUM-WELL LASERS FABRICATED BY SELECTIVE METALORGANIC VAPOR-PHASE EPITAXY WITHOUT A SEMICONDUCTOR ETCHING PROCESS
Authors: SAKATA Y MORIMOTO T INOMOTO Y HASUMI H
Citation: Y. Sakata et al., LOW-THRESHOLD STRAINED MULTIQUANTUM-WELL LASERS FABRICATED BY SELECTIVE METALORGANIC VAPOR-PHASE EPITAXY WITHOUT A SEMICONDUCTOR ETCHING PROCESS, Journal of crystal growth, 170(1-4), 1997, pp. 456-460
ALL SELECTIVE MOVPE CROWN BH-LDS FABRICATED BY THE NOVEL SELF-ALIGNMENT PROCESS
Authors: SAKATA Y DELANSAY P INOMOTO Y YAMAGUCHI M MURAKAMI T HASUMI H
Citation: Y. Sakata et al., ALL SELECTIVE MOVPE CROWN BH-LDS FABRICATED BY THE NOVEL SELF-ALIGNMENT PROCESS, IEEE photonics technology letters, 8(2), 1996, pp. 179-181
SELECTIVE MOVPE GROWTH OF INGAASP AND INGAAS USING TBA AND TBP
Authors: SAKATA Y NAKAMURA T AE S TERAKADO T INOMOTO Y TORIKAI T HASUMI H
Citation: Y. Sakata et al., SELECTIVE MOVPE GROWTH OF INGAASP AND INGAAS USING TBA AND TBP, Journal of electronic materials, 25(3), 1996, pp. 401-406
LOW DRIVE VOLTAGE (1.5VPP) AND HIGH-POWER DFB-LD MODULATOR INTEGRATEDLIGHT-SOURCES USING BANDGAP ENERGY CONTROLLED SELECTIVE MOVPE/
Authors: YAMAZAKI H SAKATA Y YAMAGUCHI M INOMOTO Y KOMATSU K
Citation: H. Yamazaki et al., LOW DRIVE VOLTAGE (1.5VPP) AND HIGH-POWER DFB-LD MODULATOR INTEGRATEDLIGHT-SOURCES USING BANDGAP ENERGY CONTROLLED SELECTIVE MOVPE/, Electronics Letters, 32(2), 1996, pp. 109-111
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