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Results:
1-11
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Results: 11
Authors:
IOANNOU DE
DUAN FL
SINHA SP
ZALESKI A
Citation: De. Ioannou et al., OPPOSITE-CHANNEL-BASED INJECTION OF HOT-CARRIERS IN SOI MOSFETS - PHYSICS AND APPLICATIONS, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1147-1154
Authors:
DUAN FL
SINHA SP
IOANNOU DE
BRADY FT
Citation: Fl. Duan et al., LDD DESIGN TRADEOFFS FOR SINGLE TRANSISTOR LATCH-UP AND HOT-CARRIER DEGRADATION CONTROL IN ACCUMULATION-MODE FD SOI MOSFETS, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 972-977
Authors:
LAWRENCE RK
IOANNOU DE
Citation: Rk. Lawrence et De. Ioannou, ELECTRON TRAPS ON HIGH-TEMPERATURE OXIDIZED SIMOX BURIED OXIDES, IEEE electron device letters, 17(7), 1996, pp. 341-343
Authors:
SINHA SP
ZALESKI A
IOANNOU DE
CAMPISI GJ
HUGHES HL
Citation: Sp. Sinha et al., HOT HOLE INDUCED INTERFACE STATE GENERATION AND ANNIHILATION IN SOI MOSFETS, IEEE electron device letters, 17(3), 1996, pp. 121-123
Authors:
SINHA SP
ZALESKI A
IOANNOU DE
CAMPISI GJ
HUGHES HL
Citation: Sp. Sinha et al., IN-DEPTH ANALYSIS OF OPPOSITE CHANNEL BASED CHARGE INJECTION IN SOI MOSFETS AND RELATED DEFECT CREATION AND ANNIHILATION, Microelectronic engineering, 28(1-4), 1995, pp. 383-386
Authors:
LAWRENCE RK
IOANNOU DE
HUGHES HL
MCMARR PJ
MRSTIK BJ
Citation: Rk. Lawrence et al., CHARGE TRAPPING VERSUS BURIED OXIDE THICKNESS FOR SIMOX STRUCTURES, IEEE transactions on nuclear science, 42(6), 1995, pp. 2114-2121
Authors:
ZALESKI A
SINHA SP
IOANNOU DE
CAMPISI GJ
HUGHES HL
Citation: A. Zaleski et al., OPPOSITE-CHANNEL-BASED CHARGE INJECTION IN SOI MOSFETS UNDER HOT-CARRIER STRESS, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1697-1700
Authors:
SINHA SP
ZALESKI A
IOANNOU DE
Citation: Sp. Sinha et al., INVESTIGATION OF CARRIER GENERATION IN FULLY DEPLETED ENHANCEMENT ANDACCUMULATION-MODE SOI MOSFETS, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2413-2416
Authors:
ZALESKI A
IOANNOU DE
CAMPISI GJ
HUGHES HL
Citation: A. Zaleski et al., SUCCESSIVE CHARGING DISCHARGING OF GATE OXIDES IN SOI MOSFETS BY SEQUENTIAL HOT-ELECTRON STRESSING OF FRONT BACK CHANNEL, IEEE electron device letters, 14(9), 1993, pp. 435-437
Authors:
ZALESKI A
IOANNOU DE
CAMPISI GJ
HUGHES HL
Citation: A. Zaleski et al., MECHANISMS OF HOT-CARRIER-INDUCED DEGRADATION OF SOI (SIMOX) MOSFETS, Microelectronic engineering, 22(1-4), 1993, pp. 403-406
Authors:
MAZHARI B
IOANNOU DE
Citation: B. Mazhari et De. Ioannou, SURFACE-POTENTIAL AT THRESHOLD IN THIN-FILM SOI MOSFETS, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1129-1133
Risultati:
1-11
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