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Results: 1-10 |
Results: 10
SUPPRESSION OF GEOMETRIC COMPONENT OF CHARGE-PUMPING CURRENT IN THIN-FILM SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
Authors: DUYET TN ISHIKURO H TAKAMIYA M SARAYA T HIRAMOTO T
Citation: Tn. Duyet et al., SUPPRESSION OF GEOMETRIC COMPONENT OF CHARGE-PUMPING CURRENT IN THIN-FILM SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, JPN J A P 2, 37(7B), 1998, pp. 855-858
HOPPING TRANSPORT IN MULTIPLE-DOT SILICON SINGLE-ELECTRON MOSFET
Authors: ISHIKURO H HIRAMOTO T
Citation: H. Ishikuro et T. Hiramoto, HOPPING TRANSPORT IN MULTIPLE-DOT SILICON SINGLE-ELECTRON MOSFET, Solid-state electronics, 42(7-8), 1998, pp. 1425-1428
FABRICATION OF GATE-ALL-AROUND MOSFET BY SILICON ANISOTROPIC ETCHING TECHNIQUE
Authors: MUKAIYAMA T SAITO K ISHIKURO H TAKAMIYA M SARAYA T HIRAMOTO T
Citation: T. Mukaiyama et al., FABRICATION OF GATE-ALL-AROUND MOSFET BY SILICON ANISOTROPIC ETCHING TECHNIQUE, Solid-state electronics, 42(7-8), 1998, pp. 1623-1626
EFFECTS OF TRAPS ON CHARGE STORAGE CHARACTERISTICS IN METAL-OXIDE-SEMICONDUCTOR MEMORY STRUCTURES BASED ON SILICON NANOCRYSTALS
Authors: SHI Y SAITO K ISHIKURO H HIRAMOTO T
Citation: Y. Shi et al., EFFECTS OF TRAPS ON CHARGE STORAGE CHARACTERISTICS IN METAL-OXIDE-SEMICONDUCTOR MEMORY STRUCTURES BASED ON SILICON NANOCRYSTALS, Journal of applied physics, 84(4), 1998, pp. 2358-2360
ROOM-TEMPERATURE COULOMB-BLOCKADE AND LOW-TEMPERATURE HOPPING TRANSPORT IN A MULTIPLE-DOT-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR
Authors: HIRAMOTO T ISHIKURO H FUJII T HASHIGUCHI G IKOMA T
Citation: T. Hiramoto et al., ROOM-TEMPERATURE COULOMB-BLOCKADE AND LOW-TEMPERATURE HOPPING TRANSPORT IN A MULTIPLE-DOT-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR, JPN J A P 1, 36(6B), 1997, pp. 4139-4142
QUANTUM-MECHANICAL EFFECTS IN THE SILICON QUANTUM-DOT IN A SINGLE-ELECTRON TRANSISTOR
Authors: ISHIKURO H HIRAMOTO T
Citation: H. Ishikuro et T. Hiramoto, QUANTUM-MECHANICAL EFFECTS IN THE SILICON QUANTUM-DOT IN A SINGLE-ELECTRON TRANSISTOR, Applied physics letters, 71(25), 1997, pp. 3691-3693
EXTREMELY LARGE-AMPLITUDE RANDOM TELEGRAPH SIGNALS IN A VERY NARROW SPLIT-GATE MOSFET AT LOW-TEMPERATURES
Authors: ISHIKURO H SARAYA T HIRAMOTO T IKOMA T
Citation: H. Ishikuro et al., EXTREMELY LARGE-AMPLITUDE RANDOM TELEGRAPH SIGNALS IN A VERY NARROW SPLIT-GATE MOSFET AT LOW-TEMPERATURES, JPN J A P 1, 35(2B), 1996, pp. 858-860
FABRICATION OF SI NANOSTRUCTURES FOR SINGLE-ELECTRON DEVICE APPLICATIONS BY ANISOTROPIC ETCHING
Authors: HIRAMOTO T ISHIKURO H SAITO K FUJII T SARAYA T HASHIGUCHI G IKOMA T
Citation: T. Hiramoto et al., FABRICATION OF SI NANOSTRUCTURES FOR SINGLE-ELECTRON DEVICE APPLICATIONS BY ANISOTROPIC ETCHING, JPN J A P 1, 35(12B), 1996, pp. 6664-6667
CHARACTERIZATION OF PRECISELY WIDTH-CONTROLLED SI QUANTUM WIRES FABRICATED ON SOI SUBSTRATES
Authors: HIRAMOTO T ISHIKURO H FUJII T SARAYA T HASHIGUCHI G IKOMA T
Citation: T. Hiramoto et al., CHARACTERIZATION OF PRECISELY WIDTH-CONTROLLED SI QUANTUM WIRES FABRICATED ON SOI SUBSTRATES, Physica. B, Condensed matter, 227(1-4), 1996, pp. 95-97
COULOMB-BLOCKADE OSCILLATIONS AT ROOM-TEMPERATURE IN A SI QUANTUM-WIRE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FABRICATED BY ANISOTROPIC ETCHING ON A SILICON-ON-INSULATOR SUBSTRATE
Authors: ISHIKURO H FUJII T SARAYA T HASHIGUCHI G HIRAMOTO T IKOMA T
Citation: H. Ishikuro et al., COULOMB-BLOCKADE OSCILLATIONS AT ROOM-TEMPERATURE IN A SI QUANTUM-WIRE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FABRICATED BY ANISOTROPIC ETCHING ON A SILICON-ON-INSULATOR SUBSTRATE, Applied physics letters, 68(25), 1996, pp. 3585-3587
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