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Results:
1-24
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Results: 24
Authors:
Tinani, M
Mueller, A
Gao, Y
Irene, EA
Hu, YZ
Tay, SP
Citation: M. Tinani et al., In situ real-time studies of nickel silicide phase formation, J VAC SCI B, 19(2), 2001, pp. 376-383
Authors:
Krauss, AR
Auciello, O
Dhote, AM
Im, J
Aggarwal, S
Ramesh, R
Irene, EA
Gao, Y
Mueller, AH
Citation: Ar. Krauss et al., Studies of ferroelectric film growth and capacitor interface processes viain situ analytical techniques and correlation with electrical properties, INTEGR FERR, 32(1-4), 2001, pp. 813-823
Authors:
Goncalves, D
Irene, EA
Citation: D. Goncalves et Ea. Irene, A study of gold-coated glass as electrodes for electropolymerization of 3-methylthiophene, LANGMUIR, 17(16), 2001, pp. 5031-5038
Authors:
Raveh, A
Brewer, J
Irene, EA
Citation: A. Raveh et al., Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Effect of plasma modes and process parameters, J VAC SCI A, 19(1), 2001, pp. 9-16
Authors:
Raveh, A
Brewer, J
Irene, EA
Citation: A. Raveh et al., Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Layer structure and composition, J VAC SCI A, 19(1), 2001, pp. 17-24
Authors:
Bianchi, RF
Onmori, RK
Goncalves, D
de Andrade, AM
Faria, RM
Irene, EA
Citation: Rf. Bianchi et al., An electrical study of a thin film poly(o-methoxyaniline) field effect transitor, SYNTH METAL, 121(1-3), 2001, pp. 1687-1688
Authors:
Irene, EA
Citation: Ea. Irene, Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime, SOL ST ELEC, 45(8), 2001, pp. 1207-1217
Authors:
Wang, Y
Irene, EA
Citation: Y. Wang et Ea. Irene, Consistent refractive index parameters for ultrathin SiO2 films, J VAC SCI B, 18(1), 2000, pp. 279-282
Studies of ferroelectric heterostructure thin films and interfaces, via insitu analytical techniques
Authors:
Auciello, O
Krauss, AR
Im, J
Dhote, A
Gruen, DM
Irene, EA
Gao, Y
Mueller, AH
Ramesh, R
Citation: O. Auciello et al., Studies of ferroelectric heterostructure thin films and interfaces, via insitu analytical techniques, INTEGR FERR, 29(1-2), 2000, pp. 1-12
Authors:
Irene, EA
Citation: Ea. Irene, Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime, MICROEL REL, 40(4-5), 2000, pp. 563-565
Authors:
Lai, L
Irene, EA
Citation: L. Lai et Ea. Irene, Si/SiO2 interface roughness study using Fowler-Nordheim tunneling current oscillations, J APPL PHYS, 87(3), 2000, pp. 1159-1164
Authors:
Delmotte, F
Hugon, MC
Agius, B
Irene, EA
Citation: F. Delmotte et al., High density plasmas for micro- and optoelectronics processing, VIDE, 54(291), 1999, pp. 11
Authors:
Hugon, MC
Delmotte, F
Agius, B
Irene, EA
Citation: Mc. Hugon et al., High density plasma deposition of device quality silicon nitride. II. Effects of thickness on the electrical properties, J VAC SCI B, 17(4), 1999, pp. 1430-1434
Authors:
Lai, L
Irene, EA
Citation: L. Lai et Ea. Irene, Area evaluation of microscopically rough surfaces, J VAC SCI B, 17(1), 1999, pp. 33-39
Authors:
Lai, L
Hebert, KJ
Irene, EA
Citation: L. Lai et al., A study of the relationship between Si/SiO2 between interface charges and roughness, J VAC SCI B, 17(1), 1999, pp. 53-59
Authors:
Auciello, O
Krauss, AR
Im, J
Dhote, A
Gruen, DM
Aggarwal, S
Ramesh, R
Irene, EA
Gao, Y
Mueller, AH
Citation: O. Auciello et al., Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques, INTEGR FERR, 27(1-4), 1999, pp. 1147-1162
Authors:
Gao, Y
Mueller, AH
Irene, EA
Auciello, O
Krauss, A
Schultz, JA
Citation: Y. Gao et al., In situ study of interface reactions of ion beam sputter deposited (Ba0.5Sr0.5)TiO3 films on Si, SiO2, and Ir, J VAC SCI A, 17(4), 1999, pp. 1880-1886
Authors:
Losurdo, M
Capezzuto, P
Bruno, G
Leo, G
Irene, EA
Citation: M. Losurdo et al., Ill-V surface plasma nitridation: A challenge for III-V nitride epigrowth, J VAC SCI A, 17(4), 1999, pp. 2194-2201
Authors:
Basa, C
Irene, EA
Citation: C. Basa et Ea. Irene, Ellipsometric investigation of nucleation sites for chemical vapor deposition of Si on SiO2 and Si3N4 surfaces, J VAC SCI A, 17(3), 1999, pp. 817-822
Authors:
Price, KJ
McNeil, LE
Suvkanov, A
Irene, EA
MacFarlane, PJ
Zvanut, ME
Citation: Kj. Price et al., Characterization of the luminescence center in photo- and electroluminescent amorphous silicon oxynitride films, J APPL PHYS, 86(5), 1999, pp. 2628-2637
Authors:
Price, KJ
Sharpe, LR
McNeil, LE
Irene, EA
Citation: Kj. Price et al., Electroluminescence in silicon oxynitride films, J APPL PHYS, 86(5), 1999, pp. 2638-2641
Authors:
Lai, L
Irene, EA
Citation: L. Lai et Ea. Irene, Limiting Si/SiO2 interface roughness resulting from thermal oxidation, J APPL PHYS, 86(3), 1999, pp. 1729-1735
Authors:
Gao, Y
Mueller, AH
Irene, EA
Auciello, O
Krauss, AR
Schultz, JA
Citation: Y. Gao et al., Real-time study of oxygen in c-axis oriented YBa2Cu3O7-delta thin films using in situ spectroscopic ellipsometry, J APPL PHYS, 86(12), 1999, pp. 6979-6984
Authors:
Losurdo, M
Capezzuto, P
Bruno, G
Irene, EA
Citation: M. Losurdo et al., Chemistry and kinetics of the GaN formation by plasma nitridation of GaAs:An in situ real-time ellipsometric study, PHYS REV B, 58(23), 1998, pp. 15878-15888
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