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Results: 1-15 |
Results: 15
DEVIATIONS OF O-16-INDUCED K-X-RAY YIELDS FROM Z(1)(2) DEPENDENCE
Authors: TONG SY DAVIES JA FORSTER JS HAUGEN HK JACKMAN TE LAPICKI G
Citation: Sy. Tong et al., DEVIATIONS OF O-16-INDUCED K-X-RAY YIELDS FROM Z(1)(2) DEPENDENCE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 119(3), 1996, pp. 383-386
DEFECT DIFFUSION IN ION-IMPLANTED ALGAAS AND INP - CONSEQUENCES FOR QUANTUM-WELL INTERMIXING
Authors: POOLE PJ CHARBONNEAU S AERS GC JACKMAN TE BUCHANAN M DION M GOLDBERG RD MITCHELL IV
Citation: Pj. Poole et al., DEFECT DIFFUSION IN ION-IMPLANTED ALGAAS AND INP - CONSEQUENCES FOR QUANTUM-WELL INTERMIXING, Journal of applied physics, 78(4), 1995, pp. 2367-2371
X-RAY-ABSORPTION STUDIES OF STRAIN IN EPITAXIAL (SI-GE) ATOMIC LAYER SUPERLATTICE AND ALLOY-FILMS
Authors: TYLISZCZAK T HITCHCOCK AP LU ZH BARIBEAU JM JACKMAN TE
Citation: T. Tyliszczak et al., X-RAY-ABSORPTION STUDIES OF STRAIN IN EPITAXIAL (SI-GE) ATOMIC LAYER SUPERLATTICE AND ALLOY-FILMS, Scanning microscopy, 8(4), 1994, pp. 795-802
SI 1S X-RAY-ABSORPTION SPECTRA OF EPITAXIAL SI-GE ATOMIC LAYER SUPERLATTICE AND ALLOY-FILMS
Authors: HITCHCOCK AP TYLISZCZAK T ROCCO MLM FRANCIS JT URQUHART SG FENG XH LU ZH BARIBEAU JM JACKMAN TE
Citation: Ap. Hitchcock et al., SI 1S X-RAY-ABSORPTION SPECTRA OF EPITAXIAL SI-GE ATOMIC LAYER SUPERLATTICE AND ALLOY-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1142-1147
QUANTITATIVE CALIBRATION OF INTENSE (ALPHA,ALPHA)-ELASTIC SCATTERING RESONANCES FOR C-12 AT 5.50-5.80 MEV AND FOR O-16 AT 7.30-7.65 MEV
Authors: DAVIES JA ALMEIDA FJD HAUGEN HK SIEGELE R FORSTER JS JACKMAN TE
Citation: Ja. Davies et al., QUANTITATIVE CALIBRATION OF INTENSE (ALPHA,ALPHA)-ELASTIC SCATTERING RESONANCES FOR C-12 AT 5.50-5.80 MEV AND FOR O-16 AT 7.30-7.65 MEV, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 28-32
VOID FORMATION AT SILICON-NITRIDE SILICON INTERFACES STUDIED BY VARIABLE-ENERGY POSITRONS
Authors: HALEC A SCHULTZ PJ BOUDREAU M BOUMERZOUG M MASCHER P MCCAFFREY JP JACKMAN TE
Citation: A. Halec et al., VOID FORMATION AT SILICON-NITRIDE SILICON INTERFACES STUDIED BY VARIABLE-ENERGY POSITRONS, Surface and interface analysis, 21(12), 1994, pp. 839-845
POLARIZATION DEPENDENCE OF THE SIK-EDGE X-RAY-ABSORPTION SPECTRA OF SI-GE ATOMIC LAYER SUPERLATTICES
Authors: HITCHCOCK AP TYLISZCZAK T AEBI P FENG XH LU ZH BARIBEAU JM JACKMAN TE
Citation: Ap. Hitchcock et al., POLARIZATION DEPENDENCE OF THE SIK-EDGE X-RAY-ABSORPTION SPECTRA OF SI-GE ATOMIC LAYER SUPERLATTICES, Surface science, 301(1-3), 1994, pp. 260-272
THRESHOLD DOSE FOR ION-INDUCED INTERMIXING IN INGAAS GAAS QUANTUM-WELLS/
Authors: ALLARD LB AERS GC PIVA PG POOLE PJ BUCHANAN M TEMPLETON IM JACKMAN TE CHARBONNEAU S AKANO U MITCHELL IV
Citation: Lb. Allard et al., THRESHOLD DOSE FOR ION-INDUCED INTERMIXING IN INGAAS GAAS QUANTUM-WELLS/, Applied physics letters, 64(18), 1994, pp. 2412-2414
SIMULTANEOUS MULTIPLE FILE EXAFS ANALYSIS - METHODOLOGY AND APPLICATION TO BURIED GE-SI INTERFACES
Authors: TYLISZCZAK T AEBI P HITCHCOCK AP JACKMAN TE BARIBEAU JM LOCKWOOD DJ
Citation: T. Tyliszczak et al., SIMULTANEOUS MULTIPLE FILE EXAFS ANALYSIS - METHODOLOGY AND APPLICATION TO BURIED GE-SI INTERFACES, JPN J A P 1, 32, 1993, pp. 134-136
INFLUENCE OF ANNEALING ON THE INTERFACE STRUCTURE AND STRAIN RELIEF IN SI GE HETEROSTRUCTURES ON (100) SI/
Authors: LOCKWOOD DJ BARIBEAU JM JACKMAN TE AEBI P TYLISZCZAK T HITCHCOCK AP HEADRICK RL
Citation: Dj. Lockwood et al., INFLUENCE OF ANNEALING ON THE INTERFACE STRUCTURE AND STRAIN RELIEF IN SI GE HETEROSTRUCTURES ON (100) SI/, Scanning microscopy, 7(2), 1993, pp. 457-471
ABSOLUTE CALIBRATION OF THE O-16 (ALPHA,ALPHA) O-16 ELASTIC-SCATTERING RESONANCE AT 7.30-7.65 MEV AND APPLICATIONS TO OXYGEN DEPTH PROFILING
Authors: ALMEIDA FJD DAVIES JA JACKMAN TE
Citation: Fjd. Almeida et al., ABSOLUTE CALIBRATION OF THE O-16 (ALPHA,ALPHA) O-16 ELASTIC-SCATTERING RESONANCE AT 7.30-7.65 MEV AND APPLICATIONS TO OXYGEN DEPTH PROFILING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 82(3), 1993, pp. 393-398
HEAVY-ION RBS ANALYSIS OF STRAINED-LAYER SUPERLATTICES
Authors: YANG Q OCONNOR DJ FANG Z OPHEL TR HAY HJ JACKMAN TE
Citation: Q. Yang et al., HEAVY-ION RBS ANALYSIS OF STRAINED-LAYER SUPERLATTICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 74(3), 1993, pp. 431-438
SI K-EDGE AND GE K-EDGE X-RAY-ABSORPTION SPECTROSCOPY OF THE SI-GE INTERFACE IN [(SI)M(GE)N]P ATOMIC LAYER SUPERLATTICES
Authors: HITCHCOCK AP TYLISZCZAK T AEBI P XIONG JZ SHAM TK BAINES KM MUELLER KA FENG XH CHEN JM YANG BX LU ZH BARIBEAU JM JACKMAN TE
Citation: Ap. Hitchcock et al., SI K-EDGE AND GE K-EDGE X-RAY-ABSORPTION SPECTROSCOPY OF THE SI-GE INTERFACE IN [(SI)M(GE)N]P ATOMIC LAYER SUPERLATTICES, Surface science, 291(3), 1993, pp. 349-369
X-RAY PHOTOELECTRON-SPECTROSCOPY STUDIES OF GE EPILAYERS ON SI(100)
Authors: LU ZH BARIBEAU JM JACKMAN TE
Citation: Zh. Lu et al., X-RAY PHOTOELECTRON-SPECTROSCOPY STUDIES OF GE EPILAYERS ON SI(100), Canadian journal of physics, 70(10-11), 1992, pp. 799-802
FOCUSED-ION-BEAM IMPLANTATION IN STRAINED INGAAS-GAAS QUANTUM-WELLS
Authors: ALLARD LB AERS GC CHARBONNEAU S JACKMAN TE TEMPLETON IM BUCHANAN M
Citation: Lb. Allard et al., FOCUSED-ION-BEAM IMPLANTATION IN STRAINED INGAAS-GAAS QUANTUM-WELLS, Canadian journal of physics, 70(10-11), 1992, pp. 1023-1026
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