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Results: 1-25/33
NEW SUBMICRON AND DEEP-SUBMICRON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR I-V AND C-V MODEL
Authors:
JANG SL
LIU SS
Citation: Sl. Jang et Ss. Liu, NEW SUBMICRON AND DEEP-SUBMICRON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR I-V AND C-V MODEL, JPN J A P 1, 37(7), 1998, pp. 3942-3947
Authors:
LIU SS
JANG SL
CHYAU CG
Citation: Ss. Liu et al., A NEW POSTSTRESS DRAIN CURRENT MODEL FOR SURFACE-CHANNEL P-TYPE METAL-OXIDE-SEMICONDUCTOR-FIELD-EFFECT-TRANSISTORS, JPN J A P 1, 37(5A), 1998, pp. 2439-2444
A COMPACT BURIED-CHANNEL LIGHTLY-DOPED-DRAIN METAL-OXIDE-SEMICONDUCTOR-FIELD-EFFECT-TRANSISTOR MODEL
Authors:
JANG SL
CHYAU CG
LIU SS
CHIU CM
Citation: Sl. Jang et al., A COMPACT BURIED-CHANNEL LIGHTLY-DOPED-DRAIN METAL-OXIDE-SEMICONDUCTOR-FIELD-EFFECT-TRANSISTOR MODEL, JPN J A P 1, 37(4A), 1998, pp. 1772-1780
Authors:
LIU SS
JANG SL
Citation: Ss. Liu et Sl. Jang, DEEP-SUBMICRON LIGHTLY-DOPED-DRAIN AND SINGLE-DRAIN METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DRAIN CURRENT MODEL FOR CIRCUIT SIMULATION, JPN J A P 1, 37(1), 1998, pp. 64-71
Authors:
JANG SL
CHEN HK
HU MC
Citation: Sl. Jang et al., LOW-FREQUENCY 1 F NOISE MODEL FOR SHORT-CHANNEL LDD MOSFETS/, Solid-state electronics, 42(6), 1998, pp. 891-899
Authors:
JANG SL
LIU SS
Citation: Sl. Jang et Ss. Liu, AN ANALYTICAL SURROUNDING GATE MOSFET MODEL, Solid-state electronics, 42(5), 1998, pp. 721-726
Authors:
JANG SL
CHEN HK
CHANG KM
Citation: Sl. Jang et al., LOW-FREQUENCY NOISE CHARACTERISTICS OF HOT CARRIER-STRESSED BURIED-CHANNEL PMOSFETS, Solid-state electronics, 42(3), 1998, pp. 411-418
Authors:
CHEN YS
JANG SL
Citation: Ys. Chen et Sl. Jang, MODELING THE ASYMMETRIC DRAIN CURRENTS OF HOT-CARRIER STRESSED PMOSFETS OPERATED IN FORWARD-MODE AND REVERSE-MODE, Solid-state electronics, 42(1), 1998, pp. 35-41
Authors:
HU MC
JANG SL
Citation: Mc. Hu et Sl. Jang, DEEP-SUBMICROMETER FULLY-DEPLETED SOI MOSFET DRAIN CURRENT MODEL FOR DIGITAL ANALOGUE CIRCUIT SIMULATION/, International journal of electronics, 84(3), 1998, pp. 167-185
Authors:
LIU SS
JANG SL
CHYAU CG
Citation: Ss. Liu et al., COMPACT LDD NMOSFET DEGRADATION MODEL, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1538-1547
Authors:
HU MC
JANG SL
Citation: Mc. Hu et Sl. Jang, AN ANALYTICAL FULLY-DEPLETED SOI MOSFET MODEL CONSIDERING THE EFFECTSOF SELF-HEATING AND SOURCE DRAIN RESISTANCE/, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 797-801
Authors:
JANG SL
LIU SS
SHEU CJ
Citation: Sl. Jang et al., A COMPACT LDD MOSFET I-V MODEL-BASED ON NONPINNED SURFACE-POTENTIAL, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2489-2498
Authors:
CHYAU CG
JANG SL
Citation: Cg. Chyau et Sl. Jang, A COMPACT PRESTRESS AND POSTSTRESS I-V MODEL FOR SUBMICROMETER BURIED-CHANNEL PMOSFET, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2167-2178
Authors:
HU MC
JANG SL
CHYAU CG
Citation: Mc. Hu et al., A PHYSICS-BASED SHORT-CHANNEL CURRENT-VOLTAGE MODEL FOR LIGHTLY-DOPED-DRAIN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS, JPN J A P 1, 36(6A), 1997, pp. 3448-3459
Authors:
HU MC
JANG SL
CHEN YS
LIU SS
LIN JM
Citation: Mc. Hu et al., AN ANALYTICAL FULLY-DEPLETED SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR MODEL CONSIDERING THE EFFECTS OF SELF-HEATING, SOURCE DRAIN RESISTANCE, IMPACT-IONIZATION, AND PARASITIC BIPOLAR JUNCTION TRANSISTOR/, JPN J A P 1, 36(5A), 1997, pp. 2606-2613
Authors:
JANG SL
HU MC
LIU SS
CHEN YS
Citation: Sl. Jang et al., A SIMPLE, ANALYTICAL AND COMPLETE DEEP-SUBMICROMETER FULLY DEPLETED SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR MODEL CONSIDERING VELOCITY OVERSHOOT, JPN J A P 1, 36(3A), 1997, pp. 1015-1024
Authors:
JANG SL
HU MC
LIU SS
Citation: Sl. Jang et al., AN ANALYTICAL SYMMETRICAL DOUBLE-GATE SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR MODEL, JPN J A P 1, 36(10), 1997, pp. 6250-6253
Authors:
LIU SS
HU MC
JANG SL
Citation: Ss. Liu et al., AN ANALYTICAL, PHYSICS-BASED LINEAR CURRENT-VOLTAGE MODEL FOR HOT-CARRIER DAMAGED LDD NMOSFET, Solid-state electronics, 41(5), 1997, pp. 793-797
Authors:
HU MC
JANG SL
Citation: Mc. Hu et Sl. Jang, A COMPLETE SUBSTRATE CURRENT MODEL FOR SUBMICROMETER AND DEEP-SUBMICROMETER MOSFETS, International journal of electronics, 83(2), 1997, pp. 159-176
Authors:
JANG SL
HU MC
Citation: Sl. Jang et Mc. Hu, AN ANALYTICAL DRAIN CURRENT MODEL FOR SUBMICROMETER AND DEEP-SUBMICROMETER MOSFETS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 1896-1902
Authors:
JANG SL
TANG TH
CHEN YS
SHEU CJ
Citation: Sl. Jang et al., MODELING OF HOT-CARRIER STRESSED CHARACTERISTICS OF SUBMICROMETER PMOSFETS, Solid-state electronics, 39(7), 1996, pp. 1043-1049
Authors:
JANG SL
CHEN WM
LIN HH
HUANG CH
Citation: Sl. Jang et al., LOW-FREQUENCY NOISE CHARACTERISTICS OF ALINAS INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Solid-state electronics, 39(11), 1996, pp. 1581-1592
Authors:
CHEN YS
TANG TH
JANG SL
Citation: Ys. Chen et al., MODELING OF HOT-CARRIER-STRESSED CHARACTERISTICS OF NMOSFETS, Solid-state electronics, 39(1), 1996, pp. 75-81
Authors:
JANG SL
STEINERT PM
MARKOVA NG
Citation: Sl. Jang et al., ACTIVITY REGULATES THE SPECIFICITY OF EXPRESSION FROM THE PROXIMAL PROMOTER OF THE HUMAN PROFILAGGRIN GENE IN CULTURED KERATINOCYTES, Journal of investigative dermatology, 106(4), 1996, pp. 199-199
Authors:
JANG SL
CHANG KY
HSU JK
Citation: Sl. Jang et al., EVIDENCE OF OPTICAL GENERATION-RECOMBINATION NOISE, Solid-state electronics, 38(8), 1995, pp. 1449-1453