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Results: 1-25 | 26-50 | 51-75 | 76-90
Results: 51-75/90
OPTICALLY DETECTED MAGNETIC-RESONANCE STUDY OF A METASTABLE SELENIUM-RELATED CENTER IN SILICON
Authors: SORMAN E CHEN WM HENRY A ANDERSSON S JANZEN E MONEMAR B
Citation: E. Sorman et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDY OF A METASTABLE SELENIUM-RELATED CENTER IN SILICON, Physical review. B, Condensed matter, 51(4), 1995, pp. 2132-2136
SHALLOW EXCITED-STATES OF DEEP LUMINESCENT CENTERS IN SILICON
Authors: SINGH M CHEN WM SON NT MONEMAR B JANZEN E
Citation: M. Singh et al., SHALLOW EXCITED-STATES OF DEEP LUMINESCENT CENTERS IN SILICON, Solid state communications, 93(5), 1995, pp. 415-418
IMPURITY CONCENTRATION DETERMINATION IN 6H-SIC
Authors: HENRY A KORDINA O HALLIN C HEMMINGSSON C JANZEN E
Citation: A. Henry et al., IMPURITY CONCENTRATION DETERMINATION IN 6H-SIC, Solid state communications, 93(5), 1995, pp. 465-465
IMPORTANT ROLE OF SHALLOW IMPURITIES IN CARRIER RECOMBINATION IN SIC
Authors: CHEN WM SON NT SORMAN E KORDINA O BERGMAN JP HENRY A MONEMAR B JANZEN E
Citation: Wm. Chen et al., IMPORTANT ROLE OF SHALLOW IMPURITIES IN CARRIER RECOMBINATION IN SIC, Solid state communications, 93(5), 1995, pp. 470-470
DIRECT DETERMINATION OF THE ELECTRON-ELECTRON-HOLE AUGER THRESHOLD ENERGY IN SILICON - REPLY
Authors: CHEN WM MONEMAR B JANZEN E FRENS AM BENNEBROEK MT SCHMIDT J
Citation: Wm. Chen et al., DIRECT DETERMINATION OF THE ELECTRON-ELECTRON-HOLE AUGER THRESHOLD ENERGY IN SILICON - REPLY, Physical review letters, 75(21), 1995, pp. 3963-3963
GROWTH OF 3C-SIC ON ON-AXIS SI(100) SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION
Authors: KORDINA O BJORKETUN LO HENRY A HALLIN C GLASS RC HULTMAN L SUNDGREN JE JANZEN E
Citation: O. Kordina et al., GROWTH OF 3C-SIC ON ON-AXIS SI(100) SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 154(3-4), 1995, pp. 303-314
STRUCTURAL-ANALYSIS OF 4H-SIC LAYERS GROWN ON 6H-SIC AND 15R-SIC SUBSTRATES
Authors: NIKITINA IP GLASS RC JANZEN E GUSEVA NB MALTSEV AA
Citation: Ip. Nikitina et al., STRUCTURAL-ANALYSIS OF 4H-SIC LAYERS GROWN ON 6H-SIC AND 15R-SIC SUBSTRATES, Journal of crystal growth, 152(4), 1995, pp. 292-299
TEMPERATURE-DEPENDENCE OF THE MINORITY-CARRIER LIFETIME IN GAAS ALGAAS DOUBLE HETEROSTRUCTURES/
Authors: BERGMAN JP HALLIN C JANZEN E
Citation: Jp. Bergman et al., TEMPERATURE-DEPENDENCE OF THE MINORITY-CARRIER LIFETIME IN GAAS ALGAAS DOUBLE HETEROSTRUCTURES/, Journal of applied physics, 78(7), 1995, pp. 4808-4810
TEMPERATURE AND DOPING DEPENDENCE OF THE PHOTON RECYCLING EFFECT IN GAAS ALGAAS HETEROSTRUCTURES/
Authors: BERGMAN JP HALLIN C JANZEN E
Citation: Jp. Bergman et al., TEMPERATURE AND DOPING DEPENDENCE OF THE PHOTON RECYCLING EFFECT IN GAAS ALGAAS HETEROSTRUCTURES/, Journal of applied physics, 77(9), 1995, pp. 4611-4615
THROMBOCYTOPENIA IN WEANED BEEF-CALVES
Authors: JANZEN E
Citation: E. Janzen, THROMBOCYTOPENIA IN WEANED BEEF-CALVES, Canadian veterinary journal, 36(1), 1995, pp. 45-46
A 4.5 KV 6H SILICON-CARBIDE RECTIFIER
Authors: KORDINA O BERGMAN JP HENRY A JANZEN E SAVAGE S ANDRE J RAMBERG LP LINDEFELT U HERMANSSON W BERGMAN K
Citation: O. Kordina et al., A 4.5 KV 6H SILICON-CARBIDE RECTIFIER, Applied physics letters, 67(11), 1995, pp. 1561-1563
ELECTRON EFFECTIVE MASSES IN 4H SIC
Authors: SON NT CHEN WM KORDINA O KONSTANTINOV AO MONEMAR B JANZEN E HOFMAN DM VOLM D DRECHSLER M MEYER BK
Citation: Nt. Son et al., ELECTRON EFFECTIVE MASSES IN 4H SIC, Applied physics letters, 66(9), 1995, pp. 1074-1076
LONG MINORITY-CARRIER LIFETIMES IN 6H SIC GROWN BY CHEMICAL-VAPOR-DEPOSITION
Authors: KORDINA O BERGMAN JP HENRY A JANZEN E
Citation: O. Kordina et al., LONG MINORITY-CARRIER LIFETIMES IN 6H SIC GROWN BY CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 66(2), 1995, pp. 189-191
PHOTOLUMINESCENCE STUDIES OF POROUS SILICON-CARBIDE
Authors: KONSTANTINOV AO HENRY A HARRIS CI JANZEN E
Citation: Ao. Konstantinov et al., PHOTOLUMINESCENCE STUDIES OF POROUS SILICON-CARBIDE, Applied physics letters, 66(17), 1995, pp. 2250-2252
SIC POWER DEVICE PASSIVATION USING POROUS SIC
Authors: HARRIS CI KONSTANTINOV AO HALLIN C JANZEN E
Citation: Ci. Harris et al., SIC POWER DEVICE PASSIVATION USING POROUS SIC, Applied physics letters, 66(12), 1995, pp. 1501-1502
HIGH-QUALITY 4H-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION
Authors: KORDINA O HENRY A BERGMAN JP SON NT CHEN WM HALLIN C JANZEN E
Citation: O. Kordina et al., HIGH-QUALITY 4H-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 66(11), 1995, pp. 1373-1375
SIC - A SEMICONDUCTOR FOR HIGH-POWER, HIGH-TEMPERATURE AND HIGH-FREQUENCY DEVICES
Authors: JANZEN E KORDINA O HENRY A CHEN WM SON NT MONEMAR B SORMAN E BERGMAN P HARRIS CI YAKIMOVA R TUOMINEN M KONSTANTINOV AO HALLIN C HEMMINGSON C
Citation: E. Janzen et al., SIC - A SEMICONDUCTOR FOR HIGH-POWER, HIGH-TEMPERATURE AND HIGH-FREQUENCY DEVICES, Physica scripta. T, 54, 1994, pp. 283-290
DYNAMICS OF THE NITROGEN-BOUND EXCITONS IN 6H SIC
Authors: BERGMAN JP HARRIS CI KORDINA O HENRY A JANZEN E
Citation: Jp. Bergman et al., DYNAMICS OF THE NITROGEN-BOUND EXCITONS IN 6H SIC, Physical review. B, Condensed matter, 50(12), 1994, pp. 8305-8309
S-CU-RELATED METASTABLE COMPLEX DEFECT IN SI BY OPTICAL-DETECTION OF MAGNETIC-RESONANCE
Authors: CHEN WM SINGH M MONEMAR B HENRY A JANZEN E FRENS AM BENNEBROEK MT SCHMIDT J
Citation: Wm. Chen et al., S-CU-RELATED METASTABLE COMPLEX DEFECT IN SI BY OPTICAL-DETECTION OF MAGNETIC-RESONANCE, Physical review. B, Condensed matter, 50(11), 1994, pp. 7365-7370
METASTABLE CHALCOGEN-RELATED LUMINESCENT CENTERS IN SILICONE
Authors: HENRY A SORMAN E ANDERSSON S CHEN WM MONEMAR B JANZEN E
Citation: A. Henry et al., METASTABLE CHALCOGEN-RELATED LUMINESCENT CENTERS IN SILICONE, Physical review. B, Condensed matter, 49(3), 1994, pp. 1662-1667
ELECTRONIC-STRUCTURE OF A PHOTOLUMINESCENT CENTER IN SILVER-DOPED SILICON
Authors: SON NT SINGH M DALFORS J MONEMAR B JANZEN E
Citation: Nt. Son et al., ELECTRONIC-STRUCTURE OF A PHOTOLUMINESCENT CENTER IN SILVER-DOPED SILICON, Physical review. B, Condensed matter, 49(24), 1994, pp. 17428-17431
HARDNESS, INTERNAL-STRESS AND FRACTURE-TOUGHNESS OF EPITAXIAL ALXGA1-XAS FILMS
Authors: HJORT K ERICSON F SCHWEITZ JA HALLIN C JANZEN E
Citation: K. Hjort et al., HARDNESS, INTERNAL-STRESS AND FRACTURE-TOUGHNESS OF EPITAXIAL ALXGA1-XAS FILMS, Thin solid films, 250(1-2), 1994, pp. 157-163
DIRECT DETERMINATION OF THE ELECTRON-ELECTRON-HOLE AUGER THRESHOLD ENERGY IN SILICON
Authors: CHEN WM MONEMAR B JANZEN E FRENS AM BENNEBROEK MT SCHMIDT J
Citation: Wm. Chen et al., DIRECT DETERMINATION OF THE ELECTRON-ELECTRON-HOLE AUGER THRESHOLD ENERGY IN SILICON, Physical review letters, 73(24), 1994, pp. 3258-3261
OBSERVATION OF RAPID DIRECT CHARGE-TRANSFER BETWEEN DEEP DEFECTS IN SILICON
Authors: FRENS AM BENNEBROEK MT ZAKRZEWSKI A SCHMIDT J CHEN WM JANZEN E LINDSTROM JL MONEMAR B
Citation: Am. Frens et al., OBSERVATION OF RAPID DIRECT CHARGE-TRANSFER BETWEEN DEEP DEFECTS IN SILICON, Physical review letters, 72(18), 1994, pp. 2939-2942
CRYSTALLINE IMPERFECTIONS IN 4H SIC GROWN WITH A SEEDED LELY METHOD
Authors: TUOMINEN M YAKIMOVA R GLASS RC TUOMI T JANZEN E
Citation: M. Tuominen et al., CRYSTALLINE IMPERFECTIONS IN 4H SIC GROWN WITH A SEEDED LELY METHOD, Journal of crystal growth, 144(3-4), 1994, pp. 267-276
Risultati: 1-25 | 26-50 | 51-75 | 76-90