Citation: Mj. Shaw et al., LOCALIZED INTERFACE STATES AND THE OPTICAL-SPECTRA OF ALSB INAS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1794-1803
Authors:
PRESTING H
HEPP M
KIBBEL H
THONKE K
SAUER R
MAHLEIN M
CABANSKI W
JAROS M
Citation: H. Presting et al., MIDINFRARED SILICON GERMANIUM BASED PHOTODETECTION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1520-1524
Citation: C. Jenner et al., INAS GA1-XINXSB AND INAS/AL1-XGAXSB SUPERLATTICES FOR INFRARED APPLICATIONS/, Semiconductor science and technology, 13(4), 1998, pp. 359-375
Citation: Ma. Cusack et al., ELECTRONIC-PROPERTIES AND OPTICAL-SPECTRA OF INAS GAAS SELF-ASSEMBLEDQUANTUM DOTS/, Microelectronic engineering, 43-4, 1998, pp. 91-98
Citation: E. Corbin et M. Jaros, OPTIMIZED SIGE SI MULTIPLE-QUANTUM WELLS FOR DETECTOR APPLICATIONS/, Semiconductor science and technology, 12(12), 1997, pp. 1641-1649
Citation: Gs. Elfardag et al., THE EFFECTS OF INTERFACE DISORDER ON INTERBAND AND INTERSUBBAND TRANSITIONS IN GE-M-SI-N-GE-M STRUCTURES, Semiconductor science and technology, 12(11), 1997, pp. 1446-1450
Citation: Mj. Shaw et al., NOVEL MICROSCOPIC PROPERTIES AND THE ELECTRONIC-STRUCTURE OF SIGE HETEROSTRUCTURES AND RELATED SYSTEMS, Thin solid films, 294(1-2), 1997, pp. 166-172
Authors:
CORBIN E
WILLIAMS CJ
WONG KB
TURTON RJ
JAROS M
Citation: E. Corbin et al., OPTICAL-SPECTRA AND AUGER RECOMBINATION IN SIGE SI HETEROSTRUCTURES IN 10 MU-M RANGE OF WAVELENGTHS/, Superlattices and microstructures, 19(1), 1996, pp. 25-32
Citation: E. Corbin et al., OPTICAL-SPECTRA AND RECOMBINATION IN SIGE SI HETEROSTRUCTURES FOR INFRARED APPLICATIONS/, Applied surface science, 102, 1996, pp. 336-341
Citation: Mj. Shaw et al., ELECTRONIC-STRUCTURE OF IMPERFECT SI GE HETEROSTRUCTURES/, Physical review. B, Condensed matter, 54(23), 1996, pp. 16781-16785
Citation: Sa. Hosseini et al., QUANTITATIVE THEORY OF 3RD-HARMONIC GENERATION IN AN (INAS)(0.7)(GASB)(0.3) (ALSB) SUPERLATTICE/, Physical review. B, Condensed matter, 53(11), 1996, pp. 6988-6991
Citation: E. Corbin et al., AUGER-FREE SI-SIGE QUANTUM-WELL STRUCTURES FOR INFRARED DETECTION AT 10 MU-M, Solid-state electronics, 39(2), 1996, pp. 237-241
Citation: Rj. Turton et M. Jaros, THE ORIGIN OF ROOM-TEMPERATURE LUMINESCENCE IN SI-GE QUANTUM-WELLS - THE CASE FOR AN INTERFACE LOCALIZATION MODEL, Applied physics letters, 69(19), 1996, pp. 2891-2893
Authors:
PRESTING H
ZINKE T
SPLETT A
KIBBEL H
JAROS M
Citation: H. Presting et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM SI GE/SI1-XGEX QUANTUM-WELLDIODES GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 69(16), 1996, pp. 2376-2378
Citation: Mj. Shaw et al., INTERFACE-INDUCED LOCALIZATION IN ALSB INAS HETEROSTRUCTURES/, Physical review. B, Condensed matter, 52(23), 1995, pp. 16341-16344
Authors:
JAROS M
ELFARDAG G
HAGON JP
TURTON RJ
WONG KB
Citation: M. Jaros et al., OPTIMIZATION AND STABILITY OF OPTICAL-SPECTRA OF NOVEL SI-GE QUANTUM-WELL STRUCTURES IN AN EXTERNAL ELECTRIC-FIELD, Journal of crystal growth, 157(1-4), 1995, pp. 11-14
Authors:
PRESTING H
ZINKE T
BRUX O
GAIL M
ABSTREITER G
KIBBEL H
JAROS M
Citation: H. Presting et al., ROOM-TEMPERATURE LUMINESCENCE FROM SI GE SINGLE-QUANTUM-WELL DIODES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 157(1-4), 1995, pp. 15-20