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Authors: SHAW MJ GOPIR G BRIDDON PR JAROS M
Citation: Mj. Shaw et al., LOCALIZED INTERFACE STATES AND THE OPTICAL-SPECTRA OF ALSB INAS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1794-1803

Authors: PRESTING H HEPP M KIBBEL H THONKE K SAUER R MAHLEIN M CABANSKI W JAROS M
Citation: H. Presting et al., MIDINFRARED SILICON GERMANIUM BASED PHOTODETECTION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1520-1524

Authors: WILLIAMS CJ CORBIN E JAROS M HERBERT DC
Citation: Cj. Williams et al., AUGER RECOMBINATION IN STRAINED SIXGE1-XSI SUPERLATTICES, Physica. B, Condensed matter, 254(3-4), 1998, pp. 240-248

Authors: CUSACK MA BRIDDON PR JAROS M
Citation: Ma. Cusack et al., ELECTRONIC-STRUCTURE, IMPURITY BINDING-ENERGIES, ABSORPTION-SPECTRA OF INAS GAAS QUANTUM DOTS/, Physica. B, Condensed matter, 253(1-2), 1998, pp. 10-27

Authors: JENNER C CORBIN E ADDERLEY BM JAROS M
Citation: C. Jenner et al., INAS GA1-XINXSB AND INAS/AL1-XGAXSB SUPERLATTICES FOR INFRARED APPLICATIONS/, Semiconductor science and technology, 13(4), 1998, pp. 359-375

Authors: CUSACK MA JAROS M BRIDDON PR
Citation: Ma. Cusack et al., ELECTRONIC-PROPERTIES AND OPTICAL-SPECTRA OF INAS GAAS SELF-ASSEMBLEDQUANTUM DOTS/, Microelectronic engineering, 43-4, 1998, pp. 91-98

Authors: CORBIN E JAROS M
Citation: E. Corbin et M. Jaros, OPTIMIZED SIGE SI MULTIPLE-QUANTUM WELLS FOR DETECTOR APPLICATIONS/, Semiconductor science and technology, 12(12), 1997, pp. 1641-1649

Authors: ELFARDAG GS TURTON RJ HAGON JP JAROS M
Citation: Gs. Elfardag et al., THE EFFECTS OF INTERFACE DISORDER ON INTERBAND AND INTERSUBBAND TRANSITIONS IN GE-M-SI-N-GE-M STRUCTURES, Semiconductor science and technology, 12(11), 1997, pp. 1446-1450

Authors: CUSACK MA BRIDDON PR JAROS M
Citation: Ma. Cusack et al., ABSORPTION-SPECTRA AND OPTICAL-TRANSITIONS IN INAS GAAS SELF-ASSEMBLED QUANTUM DOTS/, Physical review. B, Condensed matter, 56(7), 1997, pp. 4047-4050

Authors: SHAW MJ BRIDDON PR JAROS M
Citation: Mj. Shaw et al., NOVEL MICROSCOPIC PROPERTIES AND THE ELECTRONIC-STRUCTURE OF SIGE HETEROSTRUCTURES AND RELATED SYSTEMS, Thin solid films, 294(1-2), 1997, pp. 166-172

Authors: CORBIN E WILLIAMS C HAGON JP JAROS M PRESTING H
Citation: E. Corbin et al., OPTICAL-SPECTRA AND RECOMBINATION IN SI-GE HETEROSTRUCTURES, Thin solid films, 294(1-2), 1997, pp. 186-189

Authors: USCHMANN J PRESTING H KIBBEL H THONKE K SAUER R CABANSKI W JAROS M
Citation: J. Uschmann et al., IR ABSORPTION AND QUANTUM EFFICIENCY OF HIGHLY P-DOPED SIGE LAYERS, Thin solid films, 294(1-2), 1997, pp. 340-342

Authors: CORBIN E WILLIAMS CJ WONG KB TURTON RJ JAROS M
Citation: E. Corbin et al., OPTICAL-SPECTRA AND AUGER RECOMBINATION IN SIGE SI HETEROSTRUCTURES IN 10 MU-M RANGE OF WAVELENGTHS/, Superlattices and microstructures, 19(1), 1996, pp. 25-32

Authors: CORBIN E WILLIAMS CJ JAROS M
Citation: E. Corbin et al., OPTICAL-SPECTRA AND RECOMBINATION IN SIGE SI HETEROSTRUCTURES FOR INFRARED APPLICATIONS/, Applied surface science, 102, 1996, pp. 336-341

Authors: CUSACK MA BRIDDON PR JAROS M
Citation: Ma. Cusack et al., ELECTRONIC-STRUCTURE OF INAS GAAS SELF-ASSEMBLED QUANTUM DOTS/, Physical review. B, Condensed matter, 54(4), 1996, pp. 2300-2303

Authors: SHAW MJ BRIDDON PR JAROS M
Citation: Mj. Shaw et al., ELECTRONIC-STRUCTURE OF IMPERFECT SI GE HETEROSTRUCTURES/, Physical review. B, Condensed matter, 54(23), 1996, pp. 16781-16785

Authors: HOSSEINI SA SHAW MJ JAROS M
Citation: Sa. Hosseini et al., QUANTITATIVE THEORY OF 3RD-HARMONIC GENERATION IN AN (INAS)(0.7)(GASB)(0.3) (ALSB) SUPERLATTICE/, Physical review. B, Condensed matter, 53(11), 1996, pp. 6988-6991

Authors: CORBIN E WONG KB JAROS M
Citation: E. Corbin et al., AUGER-FREE SI-SIGE QUANTUM-WELL STRUCTURES FOR INFRARED DETECTION AT 10 MU-M, Solid-state electronics, 39(2), 1996, pp. 237-241

Authors: HERBERT DC WILLIAMS CJ JAROS M
Citation: Dc. Herbert et al., IMPACT IONIZATION AND NOISE IN SIGE MULTIQUANTUM-WELL STRUCTURES, Electronics Letters, 32(17), 1996, pp. 1616-1618

Authors: TURTON RJ JAROS M
Citation: Rj. Turton et M. Jaros, THE ORIGIN OF ROOM-TEMPERATURE LUMINESCENCE IN SI-GE QUANTUM-WELLS - THE CASE FOR AN INTERFACE LOCALIZATION MODEL, Applied physics letters, 69(19), 1996, pp. 2891-2893

Authors: PRESTING H ZINKE T SPLETT A KIBBEL H JAROS M
Citation: H. Presting et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM SI GE/SI1-XGEX QUANTUM-WELLDIODES GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 69(16), 1996, pp. 2376-2378

Authors: JAROS M
Citation: M. Jaros, COOL IT, New scientist, 146(1981), 1995, pp. 85-85

Authors: SHAW MJ BRIDDON PR JAROS M
Citation: Mj. Shaw et al., INTERFACE-INDUCED LOCALIZATION IN ALSB INAS HETEROSTRUCTURES/, Physical review. B, Condensed matter, 52(23), 1995, pp. 16341-16344

Authors: JAROS M ELFARDAG G HAGON JP TURTON RJ WONG KB
Citation: M. Jaros et al., OPTIMIZATION AND STABILITY OF OPTICAL-SPECTRA OF NOVEL SI-GE QUANTUM-WELL STRUCTURES IN AN EXTERNAL ELECTRIC-FIELD, Journal of crystal growth, 157(1-4), 1995, pp. 11-14

Authors: PRESTING H ZINKE T BRUX O GAIL M ABSTREITER G KIBBEL H JAROS M
Citation: H. Presting et al., ROOM-TEMPERATURE LUMINESCENCE FROM SI GE SINGLE-QUANTUM-WELL DIODES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 157(1-4), 1995, pp. 15-20
Risultati: 1-25 | 26-43