Citation: Yh. Kwon et al., EFFECTS OF SUBSTRATE MISORIENTATION ON THE FORMATION AND CHARACTERISTICS OF SELF-ASSEMBLED INP INGAP QUANTUM DOTS/, JPN J A P 2, 37(4A), 1998, pp. 366-368
Citation: Sw. Ryu et al., DEPENDENCE OF ANISOTROPIC STRAIN RELAXATION ON COMPOSITION OF LATTICE-MISMATCHED INGAASP, JPN J A P 2, 36(2A), 1997, pp. 79-81
Citation: Sw. Ryu et al., THEORETICAL INVESTIGATION OF GAIN AND LINEWIDTH ENHANCEMENT FACTOR FOR 1.55-MU-M TENSILE-STRAINED QUANTUM-WELL LASERS, Journal of lightwave technology, 15(4), 1997, pp. 711-716
Authors:
KWON YH
CHO YHH
CHOE BD
PARK SK
JEONG WG
YU JS
CHOO AG
KIM TL
Citation: Yh. Kwon et al., OPTICAL INVESTIGATION OF GAAS INGAP HETEROINTERFACES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of the Korean Physical Society, 30, 1997, pp. 160-162
Authors:
RYU SW
JEONG WG
KIM I
KIM HD
KIM HH
CHOE BD
PARK SH
Citation: Sw. Ryu et al., REDUCTION OF AS CARRYOVER BY PH3 OVERPRESSURE IN METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 179(1-2), 1997, pp. 26-31
Citation: I. Kim et al., ANALYSIS OF ABNORMAL X-RAY-DIFFRACTION PEAK BROADENING FROM INGAAS GAAS MULTIPLE-QUANTUM WELLS/, Journal of applied physics, 82(10), 1997, pp. 4865-4869
Citation: Sw. Ryu et al., DETERMINATION OF INTERDIFFUSION COEFFICIENTS OF CATIONS AND ANIONS ININGAAS INP SUPERLATTICE/, Applied physics letters, 71(12), 1997, pp. 1670-1672
Citation: Sh. Park et al., DIFFERENTIAL GAIN OF STRAINED INGAAS INGAASP QUANTUM-WELL LASERS LATTICE-MATCHED TO GAAS/, Journal of applied physics, 79(4), 1996, pp. 2157-2159
Citation: Ks. Kim et al., BAND ALIGNMENT OF IN0.5GA0.5P ALXGA1-XAS HETEROJUNCTION AND FEASIBILITY OF DEVICE APPLICATIONS/, Journal of the Korean Physical Society, 28, 1995, pp. 192-194
Citation: Js. Lee et al., VARIATION OF AL COMPOSITION OF ALGAAS DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING CCL4, Journal of the Korean Physical Society, 28, 1995, pp. 195-199
Citation: I. Kim et al., AN IMPROVED APPROACH FOR THE WAVE-EQUATION SOLUTION OF GRADED-INDEX WAVE-GUIDE, Journal of applied physics, 78(5), 1995, pp. 3514-3516
Citation: Ks. Kim et al., DETERMINATION OF AL MOLE FRACTION FOR NULL CONDUCTION-BAND OFFSET IN IN0.5GA0.5P ALXGA1-XAS HETEROJUNCTION BY PHOTOLUMINESCENCE MEASUREMENT/, Applied physics letters, 67(12), 1995, pp. 1718-1720
Citation: Sw. Ryu et al., THE EFFECT OF STRAIN ON THE INTERDIFFUSION IN INGAAS GAAS QUANTUM-WELLS/, Applied physics letters, 67(10), 1995, pp. 1417-1419
Citation: Sh. Park et al., HIGH-TEMPERATURE CHARACTERISTICS OF STRAINED IN GAAS INGAASP QUANTUM-WELL LASERS LATTICE-MATCHED TO GAAS/, IEEE photonics technology letters, 6(11), 1994, pp. 1297-1299
Citation: Js. Lee et al., CARBON DOPING AND GROWTH-RATE REDUCTION BY CCL4 DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF GAAS, Journal of applied physics, 76(9), 1994, pp. 5079-5084
Citation: Sh. Park et al., THRESHOLD CURRENT-DENSITY OF STRAINED INGAAS INGAASP QUANTUM-WELL LASERS LATTICE-MATCHED TO GAAS, Applied physics letters, 64(21), 1994, pp. 2855-2857