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Results: 1-8 |
Results: 8
COMPUTER-SIMULATION AND EXPERIMENTAL CHARACTERIZATION OF SINGLE-ELECTRON TRANSISTORS BASED ON SCHOTTKY WRAP GATE CONTROL OF 2DEG
Authors: SATOH Y KASAI S JINUSHI K HASEGAWA H
Citation: Y. Satoh et al., COMPUTER-SIMULATION AND EXPERIMENTAL CHARACTERIZATION OF SINGLE-ELECTRON TRANSISTORS BASED ON SCHOTTKY WRAP GATE CONTROL OF 2DEG, JPN J A P 1, 37(3B), 1998, pp. 1584-1590
ELECTROCHEMICAL FORMATION AND CHARACTERIZATION OF SCHOTTKY INPLANE AND WRAP GATE STRUCTURES FOR REALIZATION OF GAAS-BASED AND INP-BASED QUANTUM WIRES AND DOTS
Authors: HASEGAWA H SATO T OKADA H JINUSHI K KASAI S SATOH Y
Citation: H. Hasegawa et al., ELECTROCHEMICAL FORMATION AND CHARACTERIZATION OF SCHOTTKY INPLANE AND WRAP GATE STRUCTURES FOR REALIZATION OF GAAS-BASED AND INP-BASED QUANTUM WIRES AND DOTS, Applied surface science, 123, 1998, pp. 335-338
FABRICATION AND CHARACTERIZATION OF GAAS SINGLE-ELECTRON DEVICES HAVING SINGLE AND MULTIPLE DOTS BASED ON SCHOTTKY IN-PLANE-GATE AND WRAP-GATE CONTROL OF 2-DIMENSIONAL ELECTRON-GAS
Authors: KASAI S JINUSHI K TOMOZAWA H HASEGAWA H
Citation: S. Kasai et al., FABRICATION AND CHARACTERIZATION OF GAAS SINGLE-ELECTRON DEVICES HAVING SINGLE AND MULTIPLE DOTS BASED ON SCHOTTKY IN-PLANE-GATE AND WRAP-GATE CONTROL OF 2-DIMENSIONAL ELECTRON-GAS, JPN J A P 1, 36(3B), 1997, pp. 1678-1685
NOVEL GAAS-BASED SINGLE-ELECTRON TRANSISTORS WITH SCHOTTKY INPLANE GATES OPERATING UP TO 20 K
Authors: JINUSHI K OKADA H HASHIZUME T HASEGAWA H
Citation: K. Jinushi et al., NOVEL GAAS-BASED SINGLE-ELECTRON TRANSISTORS WITH SCHOTTKY INPLANE GATES OPERATING UP TO 20 K, JPN J A P 1, 35(2B), 1996, pp. 1132-1139
DESIGN AND FABRICATION OF GAAS ALGAAS SINGLE-ELECTRON TRANSISTORS BASED ON INPLANE SCHOTTKY GATE CONTROL OF 2DEG/
Authors: TOMOZAWA H JINUSHI K OKADA H HASHIZUME T HASEGAWA H
Citation: H. Tomozawa et al., DESIGN AND FABRICATION OF GAAS ALGAAS SINGLE-ELECTRON TRANSISTORS BASED ON INPLANE SCHOTTKY GATE CONTROL OF 2DEG/, Physica. B, Condensed matter, 227(1-4), 1996, pp. 112-115
NOVEL WIRE TRANSISTOR STRUCTURE WITH INPLANE GATE USING DIRECT SCHOTTKY CONTACTS TO 2DEG
Authors: OKADA H JINUSHI K WU NJ HASHIZUME T HASEGAWA H
Citation: H. Okada et al., NOVEL WIRE TRANSISTOR STRUCTURE WITH INPLANE GATE USING DIRECT SCHOTTKY CONTACTS TO 2DEG, JPN J A P 1, 34(2B), 1995, pp. 1315-1319
OBSERVATION OF CONDUCTANCE QUANTIZATION IN A NOVEL SCHOTTKY INPLANE GATE WIRE TRANSISTOR FABRICATED BY LOW-DAMAGE IN-SITU ELECTROCHEMICAL PROCESS
Authors: HASHIZUME T OKADA H JINUSHI K HASEGAWA H
Citation: T. Hashizume et al., OBSERVATION OF CONDUCTANCE QUANTIZATION IN A NOVEL SCHOTTKY INPLANE GATE WIRE TRANSISTOR FABRICATED BY LOW-DAMAGE IN-SITU ELECTROCHEMICAL PROCESS, JPN J A P 2, 34(5B), 1995, pp. 635-638
FABRICATION AND CHARACTERIZATION OF QUANTUM-WIRE TRANSISTORS WITH SCHOTTKY INPLANE GATES FORMED BY AN IN-SITU ELECTROCHEMICAL PROCESS
Authors: HASEGAWA H HASHIZUME T OKADA H JINUSHI K
Citation: H. Hasegawa et al., FABRICATION AND CHARACTERIZATION OF QUANTUM-WIRE TRANSISTORS WITH SCHOTTKY INPLANE GATES FORMED BY AN IN-SITU ELECTROCHEMICAL PROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1744-1750
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