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Authors:
Park, H
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Citation: S. Jeon et al., Electrical characteristics of AlOxNy prepared by oxidation of sub-10-nm-thick AlN films for MOS gate dielectric applications, J KOR PHYS, 37(6), 2000, pp. 886-888
Authors:
Whangbo, S
Jang, H
Kim, S
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Citation: S. Whangbo et al., Properties of ZnO thin films grown at room temperature by using ionized cluster beam deposition, J KOR PHYS, 37(4), 2000, pp. 456-460
Citation: Sj. Kim et H. Jang, Friction and wear of friction materials containing two different phenolic resins reinforced with aramid pulp, TRIBOL INT, 33(7), 2000, pp. 477-484
Citation: H. Jang et Sj. Kim, The effects of antimony trisulfide (Sb2S3) and zirconium silicate (ZrSiO4)in the automotive brake friction material on friction characteristics, WEAR, 239(2), 2000, pp. 229-236
Citation: Rj. Stanley et H. Jang, Electronic structure measurements of oxidized flavins and flavin complexesusing stark-effect spectroscopy, J PHYS CH A, 103(45), 1999, pp. 8976-8984
Citation: H. Jang et Mj. Grimson, The competition of bulk and surface fields in a transverse Ising model thin film, J PHYS-COND, 11(26), 1999, pp. 5045-5056
Authors:
Arai, Y
Hirose, N
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Citation: Y. Arai et al., A patient with genetic deletion of glutathione-S-transferase T1 and M1 whodeveloped non-small-cell lung cancer and myelodysplastic syndromes, AM J MED SC, 318(6), 1999, pp. 424-427