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Results:
1-18
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Results: 18
Authors:
Jang, SL
Lin, LS
Li, SH
Chen, HM
Citation: Sl. Jang et al., Dynamic triggering characteristics of SCR-type electrostatic discharge protection circuits, SOL ST ELEC, 45(7), 2001, pp. 1091-1097
Authors:
Jang, SL
Li, SH
Lin, LS
Citation: Sl. Jang et al., Silicon controlled recitfiers type electrostatic discharge protection circuits with variable holding voltage, SOL ST ELEC, 45(5), 2001, pp. 689-696
Authors:
Jang, SL
Lin, LS
Li, SH
Citation: Sl. Jang et al., Temperature-dependent dynamic triggering characteristics of SCR-type ESD protection circuits, SOL ST ELEC, 45(12), 2001, pp. 2005-2009
Authors:
Jang, SL
Li, SH
Citation: Sl. Jang et Sh. Li, MOSFET triggering silicon controlled rectifiers for electrostatic discharge protection circuits, SOL ST ELEC, 45(10), 2001, pp. 1799-1803
Authors:
Jang, SL
Sheu, CJ
Twu, CB
Citation: Sl. Jang et al., A compact drain-current model for stacked-gate flash memory cells, SOL ST ELEC, 44(8), 2000, pp. 1447-1453
Authors:
Jang, SL
Gau, MS
Lin, JK
Citation: Sl. Jang et al., Novel diode-chain triggering SCR circuits for ESD protection, SOL ST ELEC, 44(7), 2000, pp. 1297-1303
Authors:
Jang, SL
Sheu, CJ
Citation: Sl. Jang et Cj. Sheu, A non-local gate current and oxide trapping charge generation model for lightly doped drain and single-drain nMOSFETs, SOL ST ELEC, 44(7), 2000, pp. 1305-1314
Authors:
Chyau, CG
Jang, SL
Sheu, CJ
Citation: Cg. Chyau et al., A physics-based short-channel SOI MOSFET model for fully-depleted single drain and LDD devices, SOL ST ELEC, 44(3), 2000, pp. 487-499
Authors:
Jang, SL
Lin, JK
Citation: Sl. Jang et Jk. Lin, Temperature-dependence of steady-state characteristics of SCR-type ESD protection circuits, SOL ST ELEC, 44(12), 2000, pp. 2139-2146
Authors:
Sheu, CJ
Jang, SL
Citation: Cj. Sheu et Sl. Jang, A physics-based electron gate current model for fully depleted SOI MOSFETs, SOL ST ELEC, 44(10), 2000, pp. 1799-1806
Authors:
Sheu, CJ
Jang, SL
Citation: Cj. Sheu et Sl. Jang, A MOSFET gate current model with the direct tunneling mechanism, SOL ST ELEC, 44(10), 2000, pp. 1819-1824
Authors:
Jang, SL
Peng, CH
Citation: Sl. Jang et Ch. Peng, Market structure and performance in Taiwan's banking industry, ADV PAC BAS, 4, 2000, pp. 205-217
Authors:
Jang, SL
Chyau, CG
Sheu, CJ
Citation: Sl. Jang et al., Complete deep-submicron metal-oxide-semiconductor field-effect-transistor drain current model including quantum mechanical effects, JPN J A P 1, 38(2A), 1999, pp. 687-688
Authors:
Chyau, CG
Jang, SL
Citation: Cg. Chyau et Sl. Jang, A physics-based short-channel current-voltage model for buried-channel MOSFETs, SOL ST ELEC, 43(7), 1999, pp. 1177-1188
Authors:
Jang, SL
Lin, HH
Citation: Sl. Jang et Hh. Lin, Modeling of drain leakage current in SOI pMOSFETs, SOL ST ELEC, 43(12), 1999, pp. 2147-2154
Authors:
Jang, SL
Liu, SS
Citation: Sl. Jang et Ss. Liu, A novel approach for modeling accumulation-mode SOI MOSFETs, SOL ST ELEC, 43(1), 1999, pp. 87-96
Authors:
Jiou, HK
Jang, SL
Liu, SS
Citation: Hk. Jiou et al., An analytical symmetric double-gate SOI MOSFET model, INT J ELECT, 86(6), 1999, pp. 671-683
Authors:
Jang, SL
Huang, BR
Ju, JJ
Citation: Sl. Jang et al., A unified analytical fully depleted and partially depleted SOI MOSFET model, IEEE DEVICE, 46(9), 1999, pp. 1872-1876
Risultati:
1-18
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