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Results: 1-10 |
Results: 10
High energy photoemission investigations of SiO2/SiC samples
Authors: Virojanadara, C Glans, PA Johansson, LI Eickhoff, T Drube, W
Citation: C. Virojanadara et al., High energy photoemission investigations of SiO2/SiC samples, APPL SURF S, 172(3-4), 2001, pp. 253-259
Surface electronic band structure and (A)over-bar surface state lifetimes at the Be(10(1)over-bar-0) surface: Experiment and theory - art. no. 205401
Authors: Balasubramanian, T Johansson, LI Glans, PA Virojanadara, C Silkin, VM Chulkov, EV Echenique, PM
Citation: T. Balasubramanian et al., Surface electronic band structure and (A)over-bar surface state lifetimes at the Be(10(1)over-bar-0) surface: Experiment and theory - art. no. 205401, PHYS REV B, 6420(20), 2001, pp. 5401
Interfacial investigation of in situ oxidation of 4H-SiC
Authors: Virojanadara, C Johansson, LI
Citation: C. Virojanadara et Li. Johansson, Interfacial investigation of in situ oxidation of 4H-SiC, SURF SCI, 472(1-2), 2001, pp. L145-L149
A core level and valence band photoemission study of the (111) and ((1)over-bar (1)over-bar (1)over-bar) surfaces of 3C-SiC
Authors: Glans, PA Balasubramanian, T Syvajarvi, M Yakimova, R Johansson, LI
Citation: Pa. Glans et al., A core level and valence band photoemission study of the (111) and ((1)over-bar (1)over-bar (1)over-bar) surfaces of 3C-SiC, SURF SCI, 470(3), 2001, pp. 284-292
Strong phonon replicas in Be 1s photoemission spectra
Authors: Andersen, JN Balasubramanian, T Almbladh, CO Johansson, LI Nyholm, R
Citation: Jn. Andersen et al., Strong phonon replicas in Be 1s photoemission spectra, PHYS REV L, 86(19), 2001, pp. 4398-4401
Electron-phonon mass-enhancement parameter and the Fermi-line eccentricityat the Be(1010) surface from angle-resolved photoemission
Authors: Balasubramanian, T Glans, PA Johansson, LI
Citation: T. Balasubramanian et al., Electron-phonon mass-enhancement parameter and the Fermi-line eccentricityat the Be(1010) surface from angle-resolved photoemission, PHYS REV B, 61(19), 2000, pp. 12709-12712
The SiC(0001) root 3 x root 3 surface state
Authors: Glans, PA Johansson, LI
Citation: Pa. Glans et Li. Johansson, The SiC(0001) root 3 x root 3 surface state, SURF SCI, 465(1-2), 2000, pp. L759-L763
Resonant photoemission from vanadium compounds with excitation near V 2p threshold
Authors: Butorin, SM Kaurila, T Johansson, LI
Citation: Sm. Butorin et al., Resonant photoemission from vanadium compounds with excitation near V 2p threshold, J ELEC SPEC, 103, 1999, pp. 739-743
Characterization of SiO2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy
Authors: Johansson, LI Glans, PA Wahab, Q Grehk, TM Eickhoff, T Drube, W
Citation: Li. Johansson et al., Characterization of SiO2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy, APPL SURF S, 150(1-4), 1999, pp. 137-142
Morphology and polytype disturbances in sublimation growth of SiC epitaxial layers
Authors: Syvajarvi, M Yakimova, R Glans, PA Henry, A MacMillan, MF Johansson, LI Janzen, E
Citation: M. Syvajarvi et al., Morphology and polytype disturbances in sublimation growth of SiC epitaxial layers, J CRYST GR, 199, 1999, pp. 1019-1023
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